公开(公告)号：US10043655B2

公开(公告)日：2018-08-07

申请号：US15426889

申请日：2017-02-07

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/469 ,  H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US10192742B2

公开(公告)日：2019-01-29

申请号：US15874766

申请日：2018-01-18

申请人： Novellus Systems, Inc.

发明人： Frank L. Pasquale ,  Shankar Swaminathan ,  Adrien LaVoie ,  Nader Shamma ,  Girish A. Dixit

IPC分类号： H01L21/31 ,  H01L21/033 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/66 ,  C23C16/505 ,  C23C16/56 ,  H01L21/027 ,  H01L21/311

摘要： Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

公开(公告)号：US09786570B2

公开(公告)日：2017-10-10

申请号：US15015952

申请日：2016-02-04

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US09287113B2

公开(公告)日：2016-03-15

申请号：US14074617

申请日：2013-11-07

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  H01L21/66 ,  C23C16/455

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

摘要翻译： 本文提供了在敏感基板上形成薄膜同时防止对敏感基板的损伤的方法和装置。 在某些实施方案中，方法包括在敏感基材上形成双层膜，其均保护下面的基材免受损坏并具有所需的电性能。 还提供了用于评估和优化膜的方法和装置，包括评估由特定沉积工艺产生的衬底损伤的量的方法和确定保护层的最小厚度的方法。 本文所述的方法和装置可以用于在多种敏感材料如硅，钴，锗 - 锑 - 碲，硅 - 锗，氮化硅，碳化硅，钨，钛，钽，铬，镍， 钯，钌或氧化硅。

公开(公告)号：US20150206719A1

公开(公告)日：2015-07-23

申请号：US14607997

申请日：2015-01-28

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US20150107513A1

公开(公告)日：2015-04-23

申请号：US14580965

申请日：2014-12-23

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Hu Kang ,  Adrien LaVoie

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/505

CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/505

摘要： A system for processing a substrate include a processing chamber including a pedestal to support a substrate and a controller configured to a) supply precursor to the processing chamber; b) purge the processing chamber; c) perform radio frequency (RF) plasma activation; d) purge the processing chamber; and e) prior to purging the processing chamber in at least one of (b) or (d), set a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (a) or (c) for a first predetermined period.

摘要翻译： 一种用于处理衬底的系统包括：处理室，包括用于支撑衬底的基座和被配置为a）将前体供给到处理室的处理室; b）吹扫处理室; c）执行射频（RF）等离子体激活; d）吹扫处理室; 以及e）在（b）或（d）中的至少一个中清洗处理室之前，将处理室的真空压力设定为在（a）中的至少一个期间小于真空压力的第一预定压力， 或（c）第一预定期间。

公开(公告)号：US10741458B2

公开(公告)日：2020-08-11

申请号：US15965628

申请日：2018-04-27

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20180247875A1

公开(公告)日：2018-08-30

申请号：US15965628

申请日：2018-04-27

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170316988A1

公开(公告)日：2017-11-02

申请号：US15650662

申请日：2017-07-14

申请人： Novellus Systems, Inc.

发明人： Hu Kang ,  Shankar Swaminathan ,  Adrien LaVoie ,  Jon Henri

IPC分类号： H01L21/66 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC分类号： H01L22/26 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/12 ,  H01L22/20

摘要： Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.

公开(公告)号：US20170148628A1

公开(公告)日：2017-05-25

申请号：US15426889

申请日：2017-02-07

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.