发明申请
- 专利标题: PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
- 专利标题(中): 等离子体激活的合成膜沉积
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申请号: US14231554申请日: 2014-03-31
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公开(公告)号: US20140209562A1公开(公告)日: 2014-07-31
- 发明人: Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
- 申请人: Novellus Systems, Inc.
- 申请人地址: US CA Fremont
- 专利权人: Novellus Systems, Inc.
- 当前专利权人: Novellus Systems, Inc.
- 当前专利权人地址: US CA Fremont
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23C16/04 ; C23C16/455
摘要:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
公开/授权文献
- US09230800B2 Plasma activated conformal film deposition 公开/授权日:2016-01-05
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