Integrated circuit substrate for containing liquid adhesive bleed-out

    公开(公告)号:US10818567B2

    公开(公告)日:2020-10-27

    申请号:US16358203

    申请日:2019-03-19

    Applicant: Google LLC

    Abstract: Integrated circuit substrates having features for containing liquid adhesive, and methods for fabricating such substrates, are provided. A device can include a first substrate layer and a second substrate layer adhered to the first substrate layer such that a portion of the top surface of the first substrate layer is exposed to define a bottom of a cavity, and an edge of the second substrate layer adjacent to the exposed top surface of the first substrate layer defines an edge of the cavity. The device can include an integrated circuit die adhered to the exposed top surface of first substrate layer with a liquid adhesive. The first substrate layer can define a trench in the bottom of the cavity between a region of the integrated circuit die and the edge of the cavity such that the trench can receive bleed-out of the liquid adhesive from between the integrated circuit die and the top surface of the first substrate layer.

    COOLING ELECTRONIC DEVICES IN A DATA CENTER
    42.
    发明申请

    公开(公告)号:US20200296862A1

    公开(公告)日:2020-09-17

    申请号:US16890103

    申请日:2020-06-02

    Applicant: Google LLC

    Abstract: A server tray package includes a motherboard assembly that includes a plurality of data center electronic devices, the plurality of data center electronic devices including at least one heat generating processor device; and a liquid cold plate assembly. The liquid cold plate assembly includes a base portion mounted to the motherboard assembly, the base portion and motherboard assembly defining a volume that at least partially encloses the plurality of data center electronic devices; and a top portion mounted to the base portion and including a heat transfer member shaped to thermally contact the heat generating processor device, the heat transfer member including an inlet port and an outlet port that are in fluid communication with a cooling liquid flow path defined through the heat transfer member.

    High Bandwidth Memory Package For High Performance Processors

    公开(公告)号:US20200098715A1

    公开(公告)日:2020-03-26

    申请号:US16698482

    申请日:2019-11-27

    Applicant: Google LLC

    Abstract: Integrated component packages and methods of assembling integrated component packages are provided. The integrated component package can comprise a bump pitch relaxing layer. A high-bandwidth memory component directly mechanically coupled to the bump pitch relaxing layer on a first side of the bump pitch relaxing layer via a first set of bump bond connections. The high-bandwidth memory component directly electrically coupled to the bump pitch relaxing layer on the first side of the bump pitch relaxing layer via the first set of bump bond connections. The bump pitch relaxing layer mechanically coupled to a first side of a substrate via second set of bump bond connections. The high-bandwidth memory component electrically coupled to the substrate via the bump-pitch relaxing layer and the second set of bump bond connections, and a bump pitch of the second set of bump bond connections is larger than the first set of bump bond connections.

    High bandwidth memory package for high performance processors

    公开(公告)号:US10515920B2

    公开(公告)日:2019-12-24

    申请号:US15948456

    申请日:2018-04-09

    Applicant: Google LLC

    Abstract: Integrated component packages and methods of assembling integrated component packages are provided. The integrated component package can comprise a bump pitch relaxing layer. A high-bandwidth memory component directly mechanically coupled to the bump pitch relaxing layer on a first side of the bump pitch relaxing layer via a first set of bump bond connections. The high-bandwidth memory component directly electrically coupled to the bump pitch relaxing layer on the first side of the bump pitch relaxing layer via the first set of bump bond connections. The bump pitch relaxing layer mechanically coupled to a first side of a substrate via second set of bump bond connections. The high-bandwidth memory component electrically coupled to the substrate via the bump-pitch relaxing layer and the second set of bump bond connections, and a bump pitch of the second set of bump bond connections is larger than the first set of bump bond connections.

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