摘要:
A solder removal apparatus is provided. The solder removal apparatus comprises a plurality of solder-interfacing protrusions extending from a body by a length. Each of the plurality of solder-interfacing protrusions is configured to remove a corresponding one of a plurality of solder features from a semiconductor device, where each of the plurality of solder features has a height and an amount of solder material.
摘要:
Provided are an initiator and a method for debonding a wafer supporting system. The initiator for debonding a wafer supporting system includes a rotation chuck having an upper surface on which a wafer supporting system (WSS), which includes a carrier wafer, a device wafer, and a glue layer for bonding the carrier wafer and the device wafer to each other, is seated to rotate the wafer supporting system, a detecting module detecting a height and a thickness of the glue layer and a laser module generating a fracture portion on the glue layer through irradiating a side surface of the glue layer with a laser on the basis of the height and the thickness of the glue layer.
摘要:
A packaged integrated circuit for operating reliably at elevated temperatures is provided. The packaged integrated circuit includes a modified extracted die, which includes one or more extended bond pads, a package comprising a base and a lid, and a plurality of new bond wires. The modified extracted die is placed into a cavity of the base. After the modified extracted die is placed into the cavity, the plurality of new bond wires are bonded between the one or more extended bond pads of the modified extracted die and package leads of the package base or downbonds. After bonding the plurality of new bond wires, the lid is sealed to the base.
摘要:
Methods for fabricating and refurbishing an assembly are disclosed herein. The method begins by applying an adhesive layer onto a first substrate. A second substrate is placed onto the adhesive layer, thereby securing the two substrates together, the adhesive layer bounding at least one side of a channel that extends laterally between the substrates to an exterior of the assembly. And, the substrates and the adhesive layer are subjected to a bonding procedure and allowing outgassing of volatiles from the adhesive layer to escape from between the substrates through the channel, wherein the substrates bonded by the adhesive layer form a component for a semiconductor vacuum processing chamber.
摘要:
Provided are an initiator and a method for debonding a wafer supporting system. The initiator for debonding a wafer supporting system includes a rotation chuck having an upper surface on which a wafer supporting system (WSS), which includes a carrier wafer, a device wafer, and a glue layer for bonding the carrier wafer and the device wafer to each other, is seated to rotate the wafer supporting system, a detecting module detecting a height and a thickness of the glue layer and a laser module generating a fracture portion on the glue layer through irradiating a side surface of the glue layer with a laser on the basis of the height and the thickness of the glue layer.
摘要:
A semiconductor package can include a semiconductor die having an integrated circuit, a first die surface, and an opposite second die surface. A packaging can be attached to the die and have a holder surface opposite the first die surface. A heat spreader can be configured to cover the second die surface and the packaging surface and can be attached thereto by a layer of adhesive positioned between the heat spreader and the semiconductor die. A semiconductor package array can include an array of semiconductor dies and a heat spreader configured to cover each semiconductor die. A conductive lead can be electrically connected to the integrated circuit in a semiconductor die and can extend from the first die surface. Manufacturing a semiconductor package can include applying thermally conductive adhesive to the heat spreader and placing the heat spreader proximate the semiconductor die.
摘要:
A method and system for heating a circuit board component to an approximately uniform temperature sufficient to reflow the connections between the circuit board component and the circuit board. The method and system include a supplemental gas heater having a diffuser plate. The circuit board is placed against the diffuser plate and heated gas is channeled through openings in the diffuser plate into vias in the circuit board to heat a circuit board component connected on the opposite side of the circuit board. Heated gas can be channeled through selected vias towards predetermined areas and/or specified connections such as towards those areas or connections where there is a temperature differential greater than approximately 10 degrees Celsius compared to other areas or connections across the circuit board component. Hot gas can be channeled through selected vias by baffling or patterning the diffuser plate, accordingly.
摘要:
Components such as IC's mounted on a substrate such as a PCB are removed from the PCB in a heating apparatus. The heating apparatus has a mounting frame which positions the PCB above an array of infra red heating sources. The method includes the steps of bombarding the PCB with infra red energy which is absorbed and conducted to the solder joints to melt the solder to permit extraction of the components.
摘要:
A module collection and deposition system comprises a container, a module source wafer comprising modules released from the module source wafer, a module collection device operable to remove the modules from the module source wafer and dispose the modules as a disordered and dry collection into the container, and a module deposition device for removing the modules from the container and randomly disposing the modules on a receiving surface. Each module comprises an electronically active unpackaged component.
摘要:
A method for debonding a bonded part includes attaching a handle to a third side of a first substrate of the bonded part with an adhesive layer. The bonded part has a plurality of inter-substrate bond structures that couple a first side of the first substrate to a second side of a second substrate. The third side of the first substrate is opposite the first side. The first substrate and the second substrate have different thicknesses. The method includes absorbing a solvent into the adhesive layer, swelling the adhesive layer in response to the absorbing of the solvent, bending the first substrate in response to the swelling, and breaking a plurality of thermocompression bonds between the plurality of inter-substrate bond structures and the second side of the second substrate in response to the bending to debond the first substrate.