公开(公告)号：US20160380594A1

公开(公告)日：2016-12-29

申请号：US15260097

申请日：2016-09-08

申请人： Skyworks Solutions, Inc.

发明人： Weimin Sun ,  Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Guohao Zhang ,  Hardik Bhupendra Modi ,  Dinhphuoc Vu Hoang

IPC分类号： H03F1/02 ,  H03F3/213 ,  H01L23/498 ,  H01L29/20 ,  H01L23/48 ,  H01L23/552 ,  H01L23/66 ,  H01L29/08 ,  H03F3/195 ,  H01L23/00

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to provide a radio frequency signal at an output, an output matching network coupled to the output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal, and a harmonic termination circuit coupled to the output of the power amplifier. The power amplifier is included on a power amplifier die. The output matching network can include a first circuit element electrically connected to an output of the power amplifier by way of a pad on a top surface of a conductive trace, in which the top surface has an unplated portion between the pad the power amplifier die. The harmonic termination circuit can include a second circuit element. The first and second circuit elements can have separate electrical connections to the power amplifier die. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 本公开的一个方面是一种功率放大器模块，其包括被配置为在输出处提供射频信号的功率放大器，耦合到功率放大器的输出的输出匹配网络，并且被配置为在基本频率处提供阻抗匹配 射频信号和耦合到功率放大器的输出的谐波终端电路。 功率放大器包含在功率放大器管芯中。 输出匹配网络可以包括通过导电迹线的顶表面上的焊盘电连接到功率放大器的输出的第一电路元件，其中顶表面具有在功率放大器管芯之间的焊盘之间的未镀层部分。 谐波终端电路可以包括第二电路元件。 第一和第二电路元件可以具有到功率放大器管芯的分离的电连接。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US08889995B2

公开(公告)日：2014-11-18

申请号：US13040127

申请日：2011-03-03

申请人： Weimin Sun ,  Peter J. Zampardi ,  Hongxiao Shao

发明人： Weimin Sun ,  Peter J. Zampardi ,  Hongxiao Shao

IPC分类号： H05K1/11 ,  H05K3/34 ,  C25D7/06 ,  C25D5/12 ,  C25D5/02 ,  H05K3/24 ,  H05K1/02 ,  C25D17/00

CPC分类号： H01L23/66 ,  C25D5/022 ,  C25D5/12 ,  C25D7/0607 ,  C25D17/00 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6605 ,  H01L2223/6611 ,  H01L2224/03424 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05644 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48229 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/49111 ,  H01L2224/85205 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/2064 ,  H05K1/0243 ,  H05K1/09 ,  H05K1/111 ,  H05K3/10 ,  H05K3/244 ,  H05K3/3452 ,  H05K2203/049 ,  H05K2203/0597 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： To reduce the RF losses associated with high RF loss plating, such as, for example, Ni/Pd/Au plating, the solder mask is reconfigured to prevent the edges and sidewalls of the wire-bond areas from being plated in some embodiments. Leaving the edges and sidewalls of the wire-bond areas free from high RF loss plating, such as Ni/Pd/Au plating, provides a path for the RF current to flow around the high resistivity material, which reduces the RF signal loss associated with the high resistivity plating material.

摘要翻译： 为了减少与诸如例如Ni / Pd / Au电镀的高RF损耗电镀相关联的RF损耗，在一些实施例中，重新配置焊接掩模以防止引线接合区域的边缘和侧壁被电镀。 离开没有高RF损耗电镀（例如Ni / Pd / Au电镀）的引线键合区域的边缘和侧壁提供了用于RF电流围绕高电阻率材料流动的路径，这降低了与 高电阻率电镀材料。

公开(公告)号：US20130200514A1

公开(公告)日：2013-08-08

申请号：US13614125

申请日：2012-09-13

申请人： Doojin Kim ,  Youngsik Kim ,  Kitaik OH ,  Sungbok Hong

发明人： Doojin Kim ,  Youngsik Kim ,  Kitaik OH ,  Sungbok Hong

IPC分类号： H01L23/498

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85365 ,  H01L2224/85416 ,  H01L2224/85951 ,  H01L2224/85986 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/48455

摘要： A semiconductor package comprises a board including a board pad, a plurality of semiconductor chips mounted on the board, the semiconductor chips including chip pads. Bumps are disposed on the chip pads, respectively, and a wire is disposed between the chip pads and the bumps. The wire electrically connects the chip pads of the plurality of semiconductor chips and the board pad to each other.

公开(公告)号：US08456021B2

公开(公告)日：2013-06-04

申请号：US12954397

申请日：2010-11-24

申请人： Chien-Te Feng ,  Shih-Chin Lin

发明人： Chien-Te Feng ,  Shih-Chin Lin

IPC分类号： H01L21/31

CPC分类号： H01L24/32 ,  H01L21/563 ,  H01L23/481 ,  H01L23/4985 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32237 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81409 ,  H01L2224/81411 ,  H01L2224/81413 ,  H01L2224/81416 ,  H01L2224/81418 ,  H01L2224/8142 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81457 ,  H01L2224/8146 ,  H01L2224/81463 ,  H01L2224/81464 ,  H01L2224/81469 ,  H01L2224/81473 ,  H01L2224/81476 ,  H01L2224/81478 ,  H01L2224/83385 ,  H01L2224/85409 ,  H01L2224/85411 ,  H01L2224/85413 ,  H01L2224/85416 ,  H01L2224/85418 ,  H01L2224/8542 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85457 ,  H01L2224/8546 ,  H01L2224/85463 ,  H01L2224/85464 ,  H01L2224/85469 ,  H01L2224/85473 ,  H01L2224/85476 ,  H01L2224/85478 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit (IC) device includes a polymer substrate having a topside surface and a bottomside surface opposite the topside surface, a plurality of through-holes that extend from the topside surface to the bottomside surface, and a plurality of bottom metal pads on the bottomside surface positioned over the plurality of through-holes. At least one IC die having an active topside including a plurality of bond pads and a second side is affixed to the topside surface. Bonding features are coupled to the plurality of bond pads for coupling respective ones of the plurality of bond pads to the plurality bottom metal pads. The bonding features extend into the through-holes to contact the bottom metal pads.

摘要翻译： 集成电路（IC）装置包括具有顶侧表面和与顶侧表面相对的底部表面的聚合物基板，从顶侧表面延伸到底部表面的多个通孔，以及多个底部金属焊盘 底部表面定位在多个通孔上。 具有包括多个接合焊盘的活动顶面和第二侧的至少一个IC管芯固定到顶侧表面。 接合特征耦合到多个接合焊盘，用于将多个接合焊盘中的相应接合焊盘连接到多个底部金属焊盘。 接合特征延伸到通孔中以接触底部金属焊盘。

公开(公告)号：US20120018892A1

公开(公告)日：2012-01-26

申请号：US12841967

申请日：2010-07-22

申请人： MEHDI FREDERIK SOLTAN

发明人： MEHDI FREDERIK SOLTAN

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L23/49827 ,  H01L23/3121 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/66 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/06519 ,  H01L2224/13 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48699 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48799 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/73257 ,  H01L2224/81815 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/10338 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/15313 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20652 ,  H01L2224/05552

摘要： Semiconductor devices comprising a flip-chip having vias to connect front and back surfaces and a bondwire connected to the via or the back surface.Provision is made for packaging the flip-chip with a package substrate.Further aspects of the invention provide for inductance within the semiconductor device.

摘要翻译： 半导体器件包括具有连接前表面和后表面的通孔的倒装芯片和连接到通孔或背表面的接合线。 提供了用封装衬底封装倒装芯片。 本发明的其它方面提供了半导体器件内的电感。

公开(公告)号：US20110147899A1

公开(公告)日：2011-06-23

申请号：US13039311

申请日：2011-03-03

申请人： Frederick Rodriguez Dahilig ,  Sheila Marie L. Alvarez ,  Antonio B. Dimaano, JR. ,  Dioscoro A. Merilo

发明人： Frederick Rodriguez Dahilig ,  Sheila Marie L. Alvarez ,  Antonio B. Dimaano, JR. ,  Dioscoro A. Merilo

IPC分类号： H01L29/06 ,  H01L21/56

CPC分类号： H01L21/6835 ,  H01L21/568 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49805 ,  H01L24/16 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83856 ,  H01L2224/85001 ,  H01L2224/85385 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/06579 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of manufacturing an integrated circuit packaging system includes: providing an inner lead and an outer lead, the inner lead having an inner peripheral side with a non-linear contour; forming a bump contact, having a groove in and a mesa from the inner lead or the outer lead, the groove adjacent to the mesa; mounting a first device adjacent to the inner lead; connecting a second device to the mesa; and forming an encapsulation material over the first device, the inner lead, and the outer lead and covering the second device.

摘要翻译： 一种制造集成电路封装系统的方法包括：提供内引线和外引线，所述内引线具有非线性轮廓的内周侧; 形成凸起接触，其具有从内引线或外引线的凹槽和台面，与台面相邻的凹槽; 安装与内引线相邻的第一器件; 将第二设备连接到台面; 以及在所述第一装置，所述内引线和所述外引线上形成封装材料并覆盖所述第二装置。

公开(公告)号：US09847755B2

公开(公告)日：2017-12-19

申请号：US15260097

申请日：2016-09-08

申请人： Skyworks Solutions, Inc.

发明人： Weimin Sun ,  Peter J. Zampardi, Jr. ,  Hongxiao Shao ,  Guohao Zhang ,  Hardik Bhupendra Modi ,  Dinhphuoc Vu Hoang

IPC分类号： H03F3/14 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/213 ,  H03F3/195 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H01L29/20 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/66 ,  H01L23/31 ,  H01L21/768 ,  H03F3/187 ,  H03F3/347 ,  H03F1/56 ,  H01L29/8605 ,  H01L27/092 ,  H03F3/45 ,  H01L29/06 ,  H01L29/10

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to provide a radio frequency signal at an output, an output matching network coupled to the output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal, and a harmonic termination circuit coupled to the output of the power amplifier. The power amplifier is included on a power amplifier die. The output matching network can include a first circuit element electrically connected to an output of the power amplifier by way of a pad on a top surface of a conductive trace, in which the top surface has an unplated portion between the pad the power amplifier die. The harmonic termination circuit can include a second circuit element. The first and second circuit elements can have separate electrical connections to the power amplifier die. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20170257070A1

公开(公告)日：2017-09-07

申请号：US15482321

申请日：2017-04-07

申请人： Skyworks Solutions, Inc.

发明人： Hardik Bhupendra Modi ,  Sandra Louise Petty-Weeks ,  Hongxiao Shao ,  Weimin Sun ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F3/30 ,  H03F3/14

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier die, a first bonding pad on a conductive trace, and a second bonding pad on a conductive trace. The die includes an on-die passive device and a power amplifier. The first bonding pad is electrically connected to the on-die passive device by a first wire bond. The second bonding pad is in a conductive path between the first bonding pad and a radio frequency output of the power amplifier module. The second bonding pad includes a nickel layer having a thickness that is less than 0.5 um, a palladium layer over the nickel layer, and a gold layer over the palladium layer and bonded to a second wire bond that is electrically connected to an output of the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20170069584A1

公开(公告)日：2017-03-09

申请号：US15269044

申请日：2016-09-19

申请人： Skyworks Solutions, Inc.

发明人： Weimin Sun ,  Peter J. Zampardi, JR. ,  Hongxiao Shao

IPC分类号： H01L23/66 ,  H05K1/09 ,  H05K1/02 ,  H01L23/498 ,  H05K1/11 ,  H01L23/00 ,  H05K3/10

CPC分类号： H01L23/66 ,  C25D5/022 ,  C25D5/12 ,  C25D7/0607 ,  C25D17/00 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6605 ,  H01L2223/6611 ,  H01L2224/03424 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05644 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48229 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/49111 ,  H01L2224/85205 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/2064 ,  H05K1/0243 ,  H05K1/09 ,  H05K1/111 ,  H05K3/10 ,  H05K3/244 ,  H05K3/3452 ,  H05K2203/049 ,  H05K2203/0597 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： To reduce radio frequency losses during operation of a radio frequency integrated circuit module, the radio frequency integrated circuit module is fabricated such that at least one of an edge of the wirebond pad on the copper trace and a sidewall of the copper trace is free from high-resistivity plating material. The unplated portion provides a path for the radio frequency current to flow around the high-resistivity material, which reduces the radio frequency signal loss associated with the high resistivity plating material.

摘要翻译： 为了在射频集成电路模块的操作期间减少射频损耗，射频集成电路模块被制造成使得铜迹线上的引线焊盘的边缘和铜迹线的侧壁中的至少一个没有高 电阻镀层材料。 未放电部分提供射频电流围绕高电阻率材料流动的路径，这降低了与高电阻率电镀材料相关联的射频信号损失。

公开(公告)号：US20160379944A1

公开(公告)日：2016-12-29

申请号：US15259995

申请日：2016-09-08

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, JR. ,  Hsiang-Chih Sun ,  Sandra Louise Petty-Weeks ,  Guohao Zhang ,  Hardik Bhupendra Modi

IPC分类号： H01L23/66 ,  H03F3/213 ,  H01L23/00 ,  H03F3/195 ,  H01L27/06 ,  H01L23/498

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 本公开的一个方面是功率放大器模块，其包括被配置为放大射频（RF）信号的功率放大器和电耦合到功率放大器的输出的RF传输线。 功率放大器包括异质结双极晶体管和p型场效应晶体管，其中p型场效应晶体管的半导体部分对应于沟道，其包括与异质结双极晶体管的集电极层相同类型的半导体材料 。 RF传输线包括厚度小于0.5μm的镍层，镍层下方的导电层，镍层上的钯层和钯层上的金层。 模块的其他实施例与其相关方法和组件一起提供。