公开(公告)号：US11784022B2

公开(公告)日：2023-10-10

申请号：US17425872

申请日：2019-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Ohshima ,  Tatsuro Ide ,  Hideo Morishita ,  Yoichi Ose ,  Tsunenori Nomaguchi ,  Toshihide Agemura

IPC: H01J37/073 ,  G02B3/04 ,  H01J37/147 ,  H01J37/22 ,  H01J37/28

CPC classification number: H01J37/073 ,  G02B3/04 ,  H01J37/1474 ,  H01J37/22 ,  H01J37/28 ,  H01J2237/0473

Abstract: A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

公开(公告)号：US20230307206A1

公开(公告)日：2023-09-28

申请号：US18121289

申请日：2023-03-14

Applicant: JEOL Ltd.

Inventor： Kenichi Tsutsumi ,  Tatsuya Uchida ,  Kazushiro Yokouchi ,  Nobuyuki Ikeo ,  Konomi Ikita

IPC: H01J37/22 ,  H01J37/26 ,  H01J37/147

CPC classification number: H01J37/222 ,  H01J37/26 ,  H01J37/1474 ,  H01J2237/2511 ,  H01J2237/24578 ,  H01J37/244

Abstract: A charged particle beam apparatus that forms a probe with a charged particle beam and scans a specimen with the probe to acquire a scanning image. The charged particle beam apparatus includes an optical system for scanning the specimen with the probe; a detector that detects a signal generated from the specimen through the scanning of the specimen with the probe; and a control unit that controls the optical system. The control unit performs correction processing of acquiring a reference image obtained by the scanning of the specimen with the probe, comparing the reference image to a criterion image to determine a drift amount, and correcting a displacement of an irradiation position with the probe on the specimen based on the drift amount; and processing of setting a frequency with which the correction processing is to be performed based on the drift amount.

公开(公告)号：US20230268158A1

公开(公告)日：2023-08-24

申请号：US18018173

申请日：2020-08-24

Applicant: Hitachi High-Tech Corporation

Inventor： Hideki TSUSHIMA ,  Naoya ISHIGAKI

IPC: H01J37/248 ,  H01J37/244 ,  H01J37/28 ,  H01J37/26 ,  H01J37/04 ,  H01J37/147

CPC classification number: H01J37/248 ,  H01J37/244 ,  H01J37/28 ,  H01J37/265 ,  H01J37/045 ,  H01J37/1474

Abstract: A charged particle beam device according to the present invention comprises a charged particle source that emits charged particles, a detection circuit that detects electrons which are generated by a sample as a result of irradiation with the charged particles, and a power storage device (107_VHD) that holds direct voltage, and comprises a charge circuit (107_CHG) that charges the power storage device with supplied voltage, and a control circuit (107_CTL) that controls the charge circuit such that charging is carried out in a period in which no sample is measured, wherein the direct voltage held by the power storage device (107_VHD) is used as operating voltage.

公开(公告)号：US20230170180A1

公开(公告)日：2023-06-01

申请号：US18102766

申请日：2023-01-30

Applicant: ASML Netherlands B.V.

Inventor： Xuedong LIU

IPC: H01J37/26 ,  H01J37/12 ,  H01J37/141 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/12 ,  H01J37/28 ,  H01J37/141 ,  H01J37/1474

Abstract: Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

公开(公告)号：US20180269029A1

公开(公告)日：2018-09-20

申请号：US15982175

申请日：2018-05-17

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu KOZAKAI ,  Fumio ARAMAKI ,  Osamu MATSUDA ,  Kensuke SHIINA ,  Kazuo AITA ,  Anto YASAKA

IPC: H01J37/22 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/2067 ,  H01J2237/226 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: Disclosed herein is a method for acquiring an image, in which an image reducing the influence of electrification of a substrate is easily acquired. The method, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes: performing an equal-width scan caused by the ion beam in a first direction that obliquely intersects the edge and sweep in a second direction intersecting the first direction, and radiating the ion beam to a scan region of a parallelogram shape wider than the image acquiring region; detecting secondary charged particles to generate image data of the scan region; calculating the image data of the scan region to generate image data of the image acquiring region; and displaying the image data of the image acquiring region.

公开(公告)号：US20180190469A1

公开(公告)日：2018-07-05

申请号：US15741038

申请日：2015-07-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Zhaohui CHENG ,  Tomonori NAKANO ,  Kotoko URANO ,  Takeyoshi OHASHI ,  Yasunari SOHDA ,  Hideyuki KAZUMI

IPC: H01J37/153 ,  H01J37/147 ,  H01J37/141 ,  H01J37/244 ,  H01J37/22

CPC classification number: H01J37/153 ,  H01J37/141 ,  H01J37/1471 ,  H01J37/1474 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1405 ,  H01J2237/1501 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/1536 ,  H01J2237/221 ,  H01J2237/26 ,  H01J2237/2806 ,  H01J2237/2809

Abstract: In order to provide an aberration correction system that realizes a charged particle beam of which the anisotropy is reduced or eliminated on a sample surface even in the case where there is magnetic interference between pole stages of an aberration corrector, an correction system includes a line cross position control device (209) which controls a line cross position in the aberration corrector of the charged particle beam so that a designed value and an actually measured value of the line cross position are equal to each other, an image shift amount extraction device (210), and a feedback determination device (211) which determines whether or not changing an excitation amount of the aberration corrector is necessary whether or not changing an excitation amount is necessary from an extracted image shift amount.

公开(公告)号：US09984848B2

公开(公告)日：2018-05-29

申请号：US15066816

申请日：2016-03-10

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Jürgen Frosien

IPC: H01J37/141 ,  H01J37/12 ,  H01J37/147 ,  H01J37/21 ,  H01J37/28

CPC classification number: H01J37/12 ,  H01J37/1474 ,  H01J37/21 ,  H01J37/28 ,  H01J2237/1516 ,  H01J2237/152 ,  H01J2237/24475 ,  H01J2237/2448

Abstract: A multi-beam lens device is described, which includes: a first beam passage for a first charged particle beam formed along a first direction between a first beam inlet of the first beam passage and a first beam outlet of the first beam passage; a second beam passage for a second charged particle beam formed along a second direction between a second beam inlet of the second beam passage and a second beam outlet of the second beam passage, wherein the first direction and the second direction are inclined with respect to each other by an angle (α) of 5° or more such that the first beam passage approaches the second beam passage toward the first beam outlet; and a common excitation coil or a common electrode arrangement configured for focussing the first charged particle beam and the second charged particle beam. Further, a charged particle beam device as well as a method of operating a multi-beam lens device are described.

公开(公告)号：US09952511B2

公开(公告)日：2018-04-24

申请号：US15122403

申请日：2014-12-19

Applicant: Intel Corporation

Inventor： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

IPC: G03F7/20 ,  H01J37/30 ,  H01J37/06 ,  H01J37/147 ,  H01L21/027 ,  H01J37/317 ,  H01L21/311

CPC classification number: G03F7/2037 ,  H01J37/045 ,  H01J37/06 ,  H01J37/1474 ,  H01J37/3007 ,  H01J37/3026 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31776 ,  H01J2237/31796 ,  H01L21/0277 ,  H01L21/31144

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.

公开(公告)号：US20170213688A1

公开(公告)日：2017-07-27

申请号：US15417360

申请日：2017-01-27

Applicant: Hermes Microvision Inc.

Inventor： Weiming Ren ,  Xuedong Liu ,  Xuerang Hu ,  Zhongwei Chen

IPC: H01J37/06 ,  G01N23/225 ,  H01J37/28 ,  H01J37/147 ,  H01J37/22 ,  H01J37/145

CPC classification number: H01J37/06 ,  G01N23/2251 ,  G01N2223/418 ,  G01N2223/6116 ,  H01J37/145 ,  H01J37/1474 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2817

Abstract: A new multi-beam apparatus with a total FOV variable in size, orientation and incident angle, is proposed. The new apparatus provides more flexibility to speed the sample observation and enable more samples observable. More specifically, as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry, the new apparatus provide more possibilities to achieve a high throughput and detect more kinds of defects.

公开(公告)号：US09589764B2

公开(公告)日：2017-03-07

申请号：US14695617

申请日：2015-04-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chuan Wang ,  Shy-Jay Lin

IPC: G21K5/04 ,  H01J37/26 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1474 ,  H01J37/3026 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/063 ,  H01J2237/31766

Abstract: The present disclosure provides methods of electron-beam (e-beam) lithography process. The method includes loading a substrate to an electron-beam (e-beam) system such that a first subset of fields defined on the substrate is arrayed on the substrate along a first direction. The method also includes positioning a plurality of e-beam columns having a first subset of e-beam columns arrayed along the first direction. The e-beam columns of the first subset of e-beam columns are directed to different ones of the first subset of fields. The method also includes performing a first exposing process in a scan mode such that the plurality of e-beam columns scans the substrate along the first direction.

Abstract translation: 本公开提供了电子束（电子束）光刻工艺的方法。 该方法包括将衬底加载到电子束（电子束）系统，使得限定在衬底上的场的第一子集沿着第一方向排列在衬底上。 该方法还包括定位多个电子束列，其具有沿第一方向排列的电子束列的第一子集。 电子束列的第一子集的电子束列被引导到第一子集子集中的不同子集。 该方法还包括以扫描模式执行第一曝光处理，使得多个电子束列沿第一方向扫描基板。