摘要:
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction, each of the openings of the first column of openings having dog-eared corners. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings, each of the openings of the second column of openings having dog-eared corners. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
摘要:
The invention relates to a lithography system comprising an optical column, a moveable target carrier for displacing a target such as a wafer, and a differential interferometer module, wherein the interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to an interferometer module and method for measuring such a displacement and rotations.
摘要:
A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.
摘要:
The invention relates to a lithography system comprising an optical column, a moveable target carrier for displacing a target such as a wafer, and a differential interferometer module, wherein the interferometer module is adapted for emitting three reference beams towards a first mirror and three measurement beams towards a second mirror for determining a displacement between said first and second mirror. In a preferred embodiment the same module is adapted for measuring a relative rotation around two perpendicular axes as well. The present invention further relates to an interferometer module and method for measuring such a displacement and rotations.
摘要:
A pattern inspection apparatus includes a data processing circuitry to input detection data based on a secondary electron from a substrate for each irradiation unit region, where n1×m1 irradiation unit regions in irradiation unit regions configure one of n2×m2 image reference regions configuring an inspection measurement image, to calculate, for each of the n2×m2 image reference regions, a statistic value acquired from the detection data of all the n1×m1 irradiation unit regions in one of the n2×m2 image reference regions, and to define the statistic value as image reference data for the image reference region, and a comparison processing circuitry to receive transmission of the image reference data for each image reference region, and to compare, using a reference image corresponding to the inspection measurement image composed of the n2×m2 image reference regions, the measurement image with the reference image for each image reference region.
摘要:
The present invention provides a lithography apparatus including a plurality of detectors each configured to detect a mark on the substrate, and a controller configured to control a patterning so that a first operation and a second operation are alternately performed, the first operation irradiating the substrate with a beam while scan movement of the substrate is performed in a first direction, the second operation performing step movement of the substrate in a second direction different from the first direction, wherein the controller is configured to cause, in the first operation, at least one of the plurality of detectors to detect the mark, and the plurality of detectors are arranged, in the second direction, at an interval which is a positive integer multiple of a distance of the step movement.
摘要:
One embodiment relates to a device that senses alignment and height of a work piece. The device may include both an alignment sensor and a height sensor. The alignment sensor generates a first illumination beam that illuminates an alignment mark on the work piece so as to create a first reflected beam, and determines the alignment of the work piece using the first reflected beam. The height sensor generates a second illumination beam that is directed to a surface of the work piece at an oblique angle so as to form a second illumination spot and images the second illumination spot to determine the height of the work piece. Other embodiments, aspects and features are also disclosed.
摘要:
The present invention provides a drawing apparatus for performing drawing on a substrate with a charged particle beam, the apparatus comprising an optical system configured to irradiate the substrate with the charged particle beam, a substrate stage configured to hold the substrate, an aperture member provided with the substrate stage, a detector configured to detect a charged particle beam having passed through an aperture of the aperture member, and a support configured to support the detector, wherein the support and the substrate stage are separated from each other.
摘要:
An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.