公开(公告)号：US20090124066A1

公开(公告)日：2009-05-14

申请号：US12269344

申请日：2008-11-12

申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

公开(公告)号：US08003956B2

公开(公告)日：2011-08-23

申请号：US12244978

申请日：2008-10-03

申请人： D. Jeffrey Lischer ,  John (Bon-Woong) Koo ,  Peter F. Kurunczi ,  Shardul Patel ,  Wilhelm P. Platow

发明人： D. Jeffrey Lischer ,  John (Bon-Woong) Koo ,  Peter F. Kurunczi ,  Shardul Patel ,  Wilhelm P. Platow

IPC分类号： G21K5/10

CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/006 ,  H01J2237/047 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/248 ,  H01J2237/30438 ,  H01J2237/30477 ,  H01J2237/31701 ,  H01J2237/31703

摘要： An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.

摘要翻译： 一种用于中和与高电流低能量离子束相关的空间电荷效应的离子注入系统。 植入系统包括被配置为接收掺杂剂气体并产生具有特定能量和质量的离子的离子源，离子通过孔提取离子。 位于离子源下游的工件，用于接收离子束形式的提取的离子。 排放气体通道，设置在离子源和工件之间。 排出气体通道供应用于中和与离子束相关联的空间电荷效应的气体。

公开(公告)号：US20100084582A1

公开(公告)日：2010-04-08

申请号：US12244978

申请日：2008-10-03

申请人： D. Jeffrey LISCHER ,  John (Bon-Woong) KOO ,  Peter F. KURUNCZI ,  Shardul PATEL ,  Wilhelm P. PLATOW

发明人： D. Jeffrey LISCHER ,  John (Bon-Woong) KOO ,  Peter F. KURUNCZI ,  Shardul PATEL ,  Wilhelm P. PLATOW

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/006 ,  H01J2237/047 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/248 ,  H01J2237/30438 ,  H01J2237/30477 ,  H01J2237/31701 ,  H01J2237/31703

摘要： An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.

摘要翻译： 一种用于中和与高电流低能量离子束相关的空间电荷效应的离子注入系统。 植入系统包括被配置为接收掺杂剂气体并产生具有特定能量和质量的离子的离子源，离子通过孔提取离子。 位于离子源下游的工件，用于接收离子束形式的提取的离子。 排放气体通道，设置在离子源和工件之间。 排出气体通道供应用于中和与离子束相关联的空间电荷效应的气体。

公开(公告)号：US08263944B2

公开(公告)日：2012-09-11

申请号：US12340812

申请日：2008-12-22

申请人： John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

发明人： John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

IPC分类号： H01J27/00

CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/061

摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.

摘要翻译： 在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。 向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命 资源。

公开(公告)号：US08003498B2

公开(公告)日：2011-08-23

申请号：US12269344

申请日：2008-11-12

申请人： Jonathan G. England ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. England ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

摘要翻译： 公开了用于处理基板的方法的几个实例。 在特定实施例中，该方法可以包括：将多个第一粒子引入到衬底的第一区域，以便在第一区域中形成至少一个具有晶界的晶体，而不在第二区域中形成另一晶体， 邻近第一区域的区域; 并且在停止引入多个第一颗粒之后，将形成在第一区域中的至少一个晶体的晶界延伸到第二区域。

公开(公告)号：US20100155619A1

公开(公告)日：2010-06-24

申请号：US12340812

申请日：2008-12-22

申请人： John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

发明人： John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

IPC分类号： H01J27/00 ,  H01J27/02

CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/061

摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.

摘要翻译： 在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。 向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命 资源。

公开(公告)号：US20090124065A1

公开(公告)日：2009-05-14

申请号：US12269327

申请日：2008-11-12

申请人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

发明人： Jonathan G. ENGLAND ,  Frank Sinclair ,  John (Bon-Woong) Koo ,  Rajesh Dorai ,  Ludovic Godet

IPC分类号： H01L21/20

CPC分类号： H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

摘要翻译： 公开了用于处理衬底的方法的几个实例。 在特定实施例中，该方法可以包括：将具有上表面和下表面的基底设置在容纳在腔室中的压板上; 在所述基板的上表面上方产生含有多个带电粒子的等离子体，所述等离子体的截面积等于或大于所述基板的上表面的表面积; 向所述衬底施加第一偏置电压以将所述带电粒子吸引到所述衬底的上表面; 将带电粒子引入到在基板的整个上表面下延伸的区域; 并且在从非晶相到结晶相的区域中同时引发第一相转变。