公开(公告)号：US09984851B2

公开(公告)日：2018-05-29

申请号：US14463041

申请日：2014-08-19

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Hiroyuki Kariya

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/24 ,  G01R33/07

CPC classification number: H01J37/243 ,  G01R33/07 ,  G01R33/072 ,  H01J37/05 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/24514 ,  H01J2237/248 ,  H01J2237/3045

Abstract: An ion implanter includes an energy analyzer electromagnet provided between an ion source and a processing chamber. The energy analyzer electromagnet includes a Hall probe configured to generate a measurement output in response to a deflecting magnetic field and an NMR probe configured to generate an NMR output. A control unit of the ion implanter includes a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output, a magnetic field determination unit configured to determine the deflecting magnetic field from the NMR output, and a Hall probe calibration unit configured to update the known correspondence by using the deflecting magnetic field determined from the NMR output and a new measurement output of the Hall probe corresponding to the determined deflecting magnetic field.

公开(公告)号：US20160099139A1

公开(公告)日：2016-04-07

申请号：US14874106

申请日：2015-10-02

Applicant: CANON KABUSHIKI KAISHA

Inventor： Masafumi Kyogaku

IPC: H01J49/40 ,  H01J37/26 ,  H01J49/06 ,  H01J49/10 ,  H01J37/20

CPC classification number: H01J37/261 ,  H01J37/256 ,  H01J49/0004 ,  H01J2237/248 ,  H01J2237/2527

Abstract: A mass microscope apparatus includes: a measuring unit including an ionization unit configured to ionize a sample present in an observation region, and a mass spectrometry unit configured to perform mass spectrometry of ions generated by the ionization unit; an object moving device configured to relatively move the observation region as to the sample; and a switching unit configured to switch measurement conditions of the measuring unit depending on whether the mass microscope apparatus is operating in a moving measurement mode where the observation region is moved by the object moving device to sequentially perform measurement by the measuring unit, and a stationary measurement mode where the observation region is stationary and measurement is performed by the measuring unit.

Abstract translation: 质量显微镜装置包括：测量单元，包括被配置为离子化存在于观察区域中的样品的电离单元和质谱分析单元，其被配置为对由离子化单元产生的离子进行质谱分析; 被配置为使所述观察区域相对于所述样本移动的物体移动装置; 以及开关单元，其被配置为根据所述质量显微镜装置是否在所述移动测量模式中操作所述测量单元的测量条件，其中所述观察区域被所述物体移动装置移动以依次执行所述测量单元的测量，并且静止 测量模式，其中观察区域是静止的，并且由测量单元执行测量。

公开(公告)号：US20150011088A1

公开(公告)日：2015-01-08

申请号：US14381508

申请日：2013-02-27

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： Mark Edward McNie ,  Michael Joseph Cooke ,  Leslie Michael Lea

IPC: H01J37/32 ,  G05B19/418 ,  H01L21/306 ,  C23C16/52 ,  C23C16/50

CPC classification number: H01J37/32926 ,  C23C16/50 ,  C23C16/52 ,  G05B19/418 ,  G05B2219/34198 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32917 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/248 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/306 ,  H01L21/30655 ,  H01L22/12 ,  H01L22/26

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract translation: 公开了用于在具有处理室，控制器和用于调节室内的工艺参数的一个或多个装置的表面处理工具中从衬底上沉积材料和/或蚀刻材料的方法。 该方法包括：控制器根据一系列控制步骤指示一个或多个设备，每个控制步骤指定一个或多个设备被指示实现的一组定义的过程参数，其中至少一个控制步骤包括 所述控制器指示所述一个或多个设备在所述步骤的持续时间内实现一组定义的恒定过程参数，包括至少通过所述室的腔室压力和气体流速，所述持续时间小于相应的气体停留时间（Tgr ）的步骤处理室。

公开(公告)号：US20140091232A1

公开(公告)日：2014-04-03

申请号：US14118892

申请日：2012-05-18

Applicant: Tetsuji Ohsawa ,  Naoya Ishigaki

Inventor： Tetsuji Ohsawa ,  Naoya Ishigaki

IPC: H02N13/00 ,  H01J37/20

CPC classification number: H02N13/00 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/2007 ,  H01J2237/248 ,  H01L21/6831

Abstract: To improve an apparatus reliability by applying a voltage suitable to a situation, a charged-particle-beam apparatus 1 of the present invention includes: a sample stage 25; an electrostatic chuck 30; and an electrostatic-chuck controlling unit 13, and generates an image of a sample 24 by irradiating the sample 24 held on the sample stage 25 by the electrostatic chuck 30 with an electron beam 16. The electrostatic-chuck controlling unit 13, when the electrostatic chuck 30 holds the sample 24, applies a preset initial voltage to a chuck electrode of the electrostatic chuck 30; determines whether or not the sample 24 is normally clamped to the electrostatic chuck 30; and increases the voltage applied to the chuck electrode until determining that the sample 24 is clamped normally to the electrostatic chuck 30 if determining that the sample 24 is not clamped normally to the electrostatic chuck 30.

Abstract translation: 为了通过施加适合于这种情况的电压来提高装置的可靠性，本发明的带电粒子束装置1包括：样品台25; 静电吸盘30; 和静电卡盘控制单元13，并且通过用电子束16通过静电卡盘30照射保持在样品台25上的样本24来产生样本24的图像。静电卡盘控制单元13当静电吸盘控制单元13 卡盘30保持样品24，将预设的初始电压施加到静电卡盘30的卡盘电极; 确定样品24是否正常夹在静电吸盘30上; 并且如果确定样品24没有正常地夹在静电卡盘30上，则增加施加到卡盘电极的电压，直到确定样品24正常地夹在静电卡盘30上。

公开(公告)号：US08173978B2

公开(公告)日：2012-05-08

申请号：US11571695

申请日：2005-07-05

Applicant: Ho Seob Kim ,  Byeng Jin Kim

Inventor： Ho Seob Kim ,  Byeng Jin Kim

IPC: H01J37/08

CPC classification number: H01J37/263 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/14 ,  H01J37/04 ,  H01J37/3007 ,  H01J37/302 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/248 ,  H01J2237/28 ,  H01J2237/31752

Abstract: Provided is a method for controlling electron beams in a multi-microcolumn, in which unit microcolumns having an electron emitter, a lens, and a deflector are arranged in an n×m matrix. A voltage is uniformly or differentially applied to each electron emitter or extractor. The same control voltage or different voltages are applied to a region at coordinates in a control division area of each extractor to deflect the electron beams. Lens layers not corresponding to the extractors are collectively or individually controlled so as to efficiently control the electron beams of the unit microcolumn. Further, a multi-microcolumn using the method is provided.

Abstract translation: 提供了一种用于控制多微柱中的电子束的方法，其中具有电子发射器，透镜和偏转器的单元微柱以n×m矩阵排列。 电压均匀或差分施加到每个电子发射器或提取器。 将相同的控制电压或不同的电压施加到每个提取器的控制分割区域中的坐标处的区域以偏转电子束。 不对应于提取器的透镜层被集体地或单独地控制，以便有效地控制单元微柱的电子束。 此外，提供了使用该方法的多微柱。

公开(公告)号：US20120080596A1

公开(公告)日：2012-04-05

申请号：US13227505

申请日：2011-09-08

Applicant: Wilfried Vandervorst

Inventor： Wilfried Vandervorst

IPC: H01J37/26

CPC classification number: H01J37/226 ,  H01J37/285 ,  H01J49/0004 ,  H01J2237/04 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/248 ,  H01J2237/2855

Abstract: A laser atom probe system and a method for analysing a specimen by laser atom probe tomography are disclosed. The system includes a specimen holder whereon a specimen to be analyzed may be mounted, the specimen having a tip shape. The system further includes a detector, an electrode arranged between the specimen holder and the detector, and a voltage source configured to apply a voltage difference between the specimen tip and the electrode. The system also includes at least one laser system configured to direct a laser beam laterally at the specimen tip and a tip shape monitoring means configured to detect and monitor the tip shape, and/or a means for altering and/or controlling one or more laser parameters of said laser beam(s) so as to maintain, restore or control said specimen tip shape.

Abstract translation: 公开了一种激光原子探针系统和通过激光原子探针层析成像分析样品的方法。 该系统包括可以安装待分析样品的样品架，样品具有尖端形状。 所述系统还包括检测器，布置在所述检体保持器和检测器之间的电极，以及被配置为施加所述检测头和所述电极之间的电压差的电压源。 该系统还包括至少一个激光系统，其被配置为在激光束的侧面引导激光束，以及尖端形状监测装置，被配置为检测和监视尖端形状，和/或用于改变和/或控制一个或多个激光器 所述激光束的参数，以便维持，恢复或控制所述样品尖端形状。

公开(公告)号：US07601972B2

公开(公告)日：2009-10-13

申请号：US11907097

申请日：2007-10-09

Applicant: Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

Inventor： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

IPC: H01J37/18

CPC classification number: G03F7/70616 ,  G01N23/225 ,  H01J37/05 ,  H01J37/06 ,  H01J37/073 ,  H01J37/075 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/057 ,  H01J2237/06316 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/2446 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/248 ,  H01J2237/2482 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

公开(公告)号：US20070284525A1

公开(公告)日：2007-12-13

申请号：US11726966

申请日：2007-03-23

Applicant: Masayuki Kuribara ,  Jun Matsumoto

Inventor： Masayuki Kuribara ,  Jun Matsumoto

IPC: H01J37/28 ,  G01N23/00

CPC classification number: G01B15/04 ,  G01N23/225 ,  H01J2237/24535 ,  H01J2237/24578 ,  H01J2237/248 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: A line-width measurement adjusting method, which is used when first and second electron beam intensity distributions for measuring a line width are produced from intensity distribution images of secondary electrons obtained respectively by scanning a first irradiation distance with an electron beam at first magnification, and by scanning a second irradiation distance with an electron beam at second magnification, includes the step of adjusting the second electron beam intensity distribution of the electron beam at the second magnification such that the second electron beam intensity distribution is equal to the first electron beam intensity distribution of the electron beam at first magnification. The second electron beam intensity distribution may be adjusted by increasing or decreasing a second irradiation distance when producing the electron beam intensity distribution.

Abstract translation: 线宽测量调整方法，用于当用于测量线宽度的第一和第二电子束强度分布由分别通过在第一放大倍率下用电子束扫描第一照射距离获得的二次电子的强度分布图像产生时， 通过在第二倍率下用电子束扫描第二照射距离，包括以第二倍率调整电子束的第二电子束强度分布的步骤，使得第二电子束强度分布等于第一电子束强度分布 的电子束。 可以通过在产生电子束强度分布时增加或减少第二照射距离来调节第二电子束强度分布。

公开(公告)号：US06803584B2

公开(公告)日：2004-10-12

申请号：US10366746

申请日：2003-02-14

Applicant: Shiaki Murai ,  Kazuaki Yamamoto

Inventor： Shiaki Murai ,  Kazuaki Yamamoto

IPC: H01J3700

CPC classification number: H01J37/265 ,  H01J2237/0203 ,  H01J2237/248

Abstract: An electron beam control device controls an electron beam for use, such as an electron beam exposure device and the like, wherein a track of an electron beam is not adversely Influenced by the amount of magnetic variation occurring influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure and the like, wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.

Abstract translation: 电子束控制装置控制使用的电子束，例如电子束曝光装置等，其中电子束的轨迹不受不利影响的磁性变化的影响。 控制电子束如电子显微镜，电子束曝光等的电子束控制装置，其中，用于测量影响电子束的轨迹的磁性变化量的磁力计传感器， 影响，提供。

公开(公告)号：US20180286630A1

公开(公告)日：2018-10-04

申请号：US15902157

申请日：2018-02-22

Applicant: NUFLARE TECHNOLOGY, INC.

Inventor： Hidekazu Takekoshi

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/26 ,  H01J37/153

CPC classification number: H01J37/26 ,  H01J37/153 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/153 ,  H01J2237/2002 ,  H01J2237/248 ,  H01J2237/2806 ,  H01J2237/2809 ,  H01J2237/2817 ,  H01J2237/2826

Abstract: A multi charged particle beam inspection apparatus includes a plurality of sensors, arranged inside or on a periphery of a secondary electron image acquisition mechanism, to measure a plurality of interfering factors, a determination circuit to determine, for each interfering factor, whether change exceeding a corresponding threshold is a first case which returns to the original state within a predetermined time period, or a second case which does not return to the original state even if the predetermined time period has passed, and a comparison circuit to input a reference image of a region corresponding to the secondary electron image acquired, and compare the secondary electron image with the reference image, wherein in the case where change of the second case occurs, the secondary electron image acquisition mechanism suspends the acquisition operation of the secondary electron image, and calibrates a change amount of the multiple charged particle beams.