公开(公告)号：US20170092461A1

公开(公告)日：2017-03-30

申请号：US15279055

申请日：2016-09-28

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu KOZAKAI ,  Fumio ARAMAKI ,  Osamu MATSUDA ,  Kensuke SHIINA ,  Kazuo AITA ,  Anto YASAKA

IPC: H01J37/22 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/2067 ,  H01J2237/226 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: Disclosed herein is a method for acquiring an image, in which an image reducing the influence of electrification of a substrate is easily acquired. The method, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes: performing an equal-width scan caused by the ion beam in a first direction that obliquely intersects the edge and sweep in a second direction intersecting the first direction, and radiating the ion beam to a scan region of a parallelogram shape wider than the image acquiring region; detecting secondary charged particles to generate image data of the scan region; calculating the image data of the scan region to generate image data of the image acquiring region; and displaying the image data of the image acquiring region.

公开(公告)号：US20180269029A1

公开(公告)日：2018-09-20

申请号：US15982175

申请日：2018-05-17

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu KOZAKAI ,  Fumio ARAMAKI ,  Osamu MATSUDA ,  Kensuke SHIINA ,  Kazuo AITA ,  Anto YASAKA

IPC: H01J37/22 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/2067 ,  H01J2237/226 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: Disclosed herein is a method for acquiring an image, in which an image reducing the influence of electrification of a substrate is easily acquired. The method, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes: performing an equal-width scan caused by the ion beam in a first direction that obliquely intersects the edge and sweep in a second direction intersecting the first direction, and radiating the ion beam to a scan region of a parallelogram shape wider than the image acquiring region; detecting secondary charged particles to generate image data of the scan region; calculating the image data of the scan region to generate image data of the image acquiring region; and displaying the image data of the image acquiring region.

公开(公告)号：US20200310245A1

公开(公告)日：2020-10-01

申请号：US16817249

申请日：2020-03-12

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu KOZAKAI ,  Fumio ARAMAKI ,  Osamu MATSUDA ,  Kensuke SHIINA

IPC: G03F1/72 ,  G03F1/22 ,  G03F7/20

Abstract: The present disclosure relates to a mask repair apparatus capable of efficiently repairing a defect of a target EUVL mask. The mask repair apparatus repairs the defect of the target extreme ultra violet lithography (EUVL) mask having a reflective layer, a first layer disposed on the reflective layer, and a second layer disposed on the first layer, and a third layer disposed on the second layer. The mask repair apparatus performs etching of the third layer by a first etching method, and after the etching of the third layer by the first etching method, performs etching of the second layer by the second etching method different from the first etching method.