公开(公告)号：US10016338B2

公开(公告)日：2018-07-10

申请号：US15385150

申请日：2016-12-20

申请人： SIO2 MEDICAL PRODUCTS, INC.

发明人： Christopher Weikart ,  Becky L. Clark ,  Adam Stevenson ,  John T. Felts

IPC分类号： A61J1/14 ,  A61J1/03 ,  B65D25/14 ,  A61M5/31 ,  A61L31/08 ,  A61L31/04 ,  A61L31/16 ,  C23C16/50 ,  C23C16/40

CPC分类号： A61J1/1468 ,  A61J1/00 ,  A61J1/035 ,  A61J1/05 ,  A61L31/04 ,  A61L31/08 ,  A61L31/088 ,  A61L31/143 ,  A61L31/16 ,  A61L2420/02 ,  A61L2420/08 ,  A61M5/3129 ,  A61M2005/3131 ,  A61M2205/0238 ,  B65D25/14 ,  C23C16/029 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/50

摘要： An article is described including an article surface and a coating set comprising a tie coating or layer of SiOxCy or Si(NH)xCy applied to the article surface, a barrier coating or layer of SiOx, and a pH protective layer of SiOxCy or Si(NH)xCy. The respective coatings or layers can be applied by chemical vapor deposition of a polysiloxane or polysilazane precursor in the presence of oxygen. Examples of such an article are a prefilled thermoplastic syringe or thermoplastic pharmaceutical vial with a coated interior portion containing a pharmaceutical preparation or other fluid with a pH of 4 to 8, alternatively 5 to 9. The barrier coating or layer prevents oxygen from penetrating into the thermoplastic syringe or vial, and the tie coating or layer and pH protective coating or layer together protect the barrier layer from the contents of the syringe or vial.

公开(公告)号：US09997354B2

公开(公告)日：2018-06-12

申请号：US15448519

申请日：2017-03-02

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yugo Orihashi ,  Kazuhiro Yuasa ,  Atsushi Moriya ,  Naoharu Nakaiso

IPC分类号： H01L21/02 ,  C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L27/108 ,  H01L27/11582

CPC分类号： H01L21/0259 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/24 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02645 ,  H01L27/10855 ,  H01L27/11582

摘要： There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.

公开(公告)号：US09937099B2

公开(公告)日：2018-04-10

申请号：US14751435

申请日：2015-06-26

申请人： SIO2 MEDICAL PRODUCTS, INC.

发明人： Christopher Weikart ,  Becky L. Clark ,  Adam Stevenson ,  John T. Felts

IPC分类号： A61J1/14 ,  B32B1/02 ,  A61J1/05 ,  A61J1/00 ,  A61J1/06 ,  A61M3/02 ,  A61M3/00 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  C23C16/02 ,  A61J1/20 ,  A61M5/31

CPC分类号： A61J1/1468 ,  A61J1/00 ,  A61J1/05 ,  A61J1/06 ,  A61J1/062 ,  A61J1/065 ,  A61J1/1425 ,  A61J1/2096 ,  A61M3/00 ,  A61M3/0204 ,  A61M3/0208 ,  A61M3/0212 ,  A61M3/0216 ,  A61M3/022 ,  A61M3/0262 ,  A61M5/3129 ,  A61M2005/3131 ,  A61M2205/0238 ,  B32B1/02 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45523 ,  Y10T428/1383

摘要： An article is described including an article surface and a coating set comprising an optional tie coating or layer, a barrier coating or layer, and a pH protective layer. The respective coatings or layers can be applied by chemical vapor deposition of a polysiloxane or polysilazane precursor in the presence of oxygen. Examples of such an article are a prefilled thermoplastic syringe or thermoplastic pharmaceutical vial with a coated interior portion containing a pharmaceutical preparation or other fluid with a pH of 4 to 8, alternatively 5 to 9. The barrier coating or layer prevents oxygen from penetrating into the thermoplastic syringe or vial. The tie coating or layer, if present, and the pH protective coating or layer protect the barrier layer from the contents of the syringe or vial.

公开(公告)号：US09915866B2

公开(公告)日：2018-03-13

申请号：US14942893

申请日：2015-11-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsun-Chuan Shih ,  Sheng-Chi Chin ,  Yuan-Chih Chu ,  Yueh-Hsun Li

IPC分类号： G03F1/22 ,  G03F1/26 ,  G03F1/72 ,  G03F1/74 ,  G03F1/82 ,  H01L21/44 ,  H01L21/02 ,  H01L21/285 ,  H01L21/321

CPC分类号： G03F1/72 ,  C23C16/047 ,  C23C16/45523 ,  G03F1/22 ,  G03F1/26 ,  G03F1/74 ,  G03F1/82 ,  H01L21/02277 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28556 ,  H01L21/321

摘要： A semiconductor device fabrication method includes irradiating a first surface of a substrate with a radiation beam. While irradiating the first surface of the substrate, a precursor gas is introduced near the first surface to deposit a layer including a first material. The precursor gas is removed from near the first surface after the depositing the layer. After the removing the precursor gas and prior to forming another layer over the layer, while irradiating a second surface of the layer, a cleaning gas is introduced near the second surface of the layer to transform the first material into a second material.

公开(公告)号：US20180066359A1

公开(公告)日：2018-03-08

申请号：US15807896

申请日：2017-11-09

申请人： ASM IP Holding B.V.

发明人： Dae Youn KIM ,  Seung Woo CHOI ,  Young Hoon KIM ,  Seiji OKURA ,  Hyung Wook NOH ,  Dong Seok KANG

IPC分类号： C23C16/30 ,  C23C16/455 ,  C23C16/50

CPC分类号： C23C16/308 ,  C23C16/45523 ,  C23C16/50

摘要： Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.

公开(公告)号：US09911888B2

公开(公告)日：2018-03-06

申请号：US14976798

申请日：2015-12-21

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tze-Chiang Chen ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L31/077 ,  C23C16/50 ,  H01L31/20 ,  H01L21/02 ,  C23C16/02 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  C23C16/455 ,  C23C16/515 ,  H01L31/0224 ,  H01L31/065 ,  H01L31/18 ,  H01L31/056

CPC分类号： H01L31/077 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/50 ,  C23C16/515 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03682 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/065 ,  H01L31/1816 ,  H01L31/20 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548

摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

公开(公告)号：US09892814B2

公开(公告)日：2018-02-13

申请号：US15040177

申请日：2016-02-10

申请人： Beneq Oy

发明人： Jarmo Maula

IPC分类号： H01L21/31 ,  H01B1/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C28/00 ,  C23C30/00 ,  C23C28/04

CPC分类号： H01B1/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  C23C28/00 ,  C23C28/04 ,  C23C30/00

摘要： A method for forming an electrically conductive oxide film (1) on a substrate (2), the method comprising the steps of, bringing the substrate (2) into a reaction space, forming a preliminary deposit on a deposition surface of the substrate (2) and treating the deposition surface with a chemical. The step of forming the preliminary deposit on the deposition surface of the substrate (2) comprises forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space. The step of treating the deposition surface with a chemical comprises treating the deposition surface with an organometallic chemical and subsequently purging the reaction space, to form oxide comprising oxygen, first metal and transition metal. The steps of forming the preliminary deposit and treating the deposition surface being alternately repeated such that a film (1) of electrically conductive oxide is formed on the substrate (2).

公开(公告)号：US09863042B2

公开(公告)日：2018-01-09

申请号：US14214030

申请日：2014-03-14

申请人： SIO2 MEDICAL PRODUCTS, INC.

发明人： Joseph A. Jones ,  John T. Felts ,  James Troy Gresham ,  Brian Russell Lilly ,  Thomas E. Fisk

IPC分类号： F16C33/04 ,  B05C11/00 ,  C23C16/50 ,  A41D19/00 ,  C23C4/04 ,  B05D7/24 ,  H05H1/24 ,  C23C16/455 ,  A61L31/08 ,  C23C16/32 ,  A61L31/14 ,  A61M5/31 ,  A61M5/28 ,  C23C16/40 ,  C23C16/515 ,  C23C16/505 ,  C23C16/511 ,  A61M5/32

CPC分类号： C23C16/45523 ,  A61L31/088 ,  A61L31/14 ,  A61M5/28 ,  A61M5/3129 ,  A61M5/3134 ,  A61M5/3202 ,  A61M2005/3104 ,  A61M2005/3131 ,  C23C16/32 ,  C23C16/401 ,  C23C16/50 ,  C23C16/505 ,  C23C16/511 ,  C23C16/515

摘要： A method for coating a substrate surface such as a syringe part by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally an oxidizing gas by providing plasma-forming energy adjacent to the substrate, thus forming a coating on the substrate surface by plasma enhanced chemical vapor deposition (PECVD). The plasma-forming energy is applied in a first phase as a first pulse at a first energy level followed by further treatment in a second phase at a second energy level lower than the first energy level. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O2 to the organosilicon precursor in the gaseous reactant, and/or by setting the electric power used for generating the plasma.

公开(公告)号：US09840779B2

公开(公告)日：2017-12-12

申请号：US14769449

申请日：2014-02-10

申请人： Oerlikon Surface Solutions AG, Trübbach

发明人： Sebastien Guimond ,  Manfred Wurzer ,  Franz Widowitz

IPC分类号： B32B7/02 ,  C23C28/04 ,  C23C16/00 ,  C23C16/02 ,  C23C16/26 ,  C23C16/455 ,  C23C14/34 ,  C23C16/513

CPC分类号： C23C28/048 ,  C23C14/345 ,  C23C16/006 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/45523 ,  C23C16/513 ,  C23C28/046

摘要： A jet-black coating that resists wear; first, at least one DLC layer with a high degree of hardness is applied to a component and then a gradient layer, whose density decreases in the direction toward the surface, is applied to this DLC layer. By means of the refraction index progression that this produces in the gradient layer, the gradient layer functions as a reflection-reducing layer.

公开(公告)号：US09793107B2

公开(公告)日：2017-10-17

申请号：US14227809

申请日：2014-03-27

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takaaki Noda ,  Satoshi Shimamoto ,  Shingo Nohara ,  Yoshiro Hirose ,  Kiyohiko Maeda

IPC分类号： C23C16/00 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C16/36 ,  C23C16/40

CPC分类号： H01L21/02126 ,  C23C16/36 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45578 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32559 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234

摘要： A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.