公开(公告)号：US10024825B2

公开(公告)日：2018-07-17

申请号：US14963703

申请日：2015-12-09

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: G01H13/00 ,  G01N29/34 ,  H01L21/67 ,  G01N29/09 ,  G01N29/12 ,  G01N29/24 ,  H01L21/683 ,  H01L21/66

Abstract: A workpiece clamping status detection system and method for detecting a clamping state of a clamping device is provided. A clamping device having a clamping surface is configured to selectively clamp a workpiece to the clamping surface. The clamping device may be an electrostatic chuck or a mechanical clamp for selectively securing a semiconductor wafer thereto. A vibration-inducing mechanism is further provided, wherein the vibration-inducing mechanism is configured to selectively vibrate one or more of the clamping device and workpiece. A vibration-sensing mechanism is also provided, wherein the vibration-sensing mechanism is configured to detect the vibration of the one or more of the clamping device and workpiece. Detection of clamping status utilizes changes in acoustic properties, such as a shift of natural resonance frequency or acoustic impedance, to determine clamping condition of the workpiece. A controller is further configured to determine a clamping state associated with the clamping of the workpiece to the clamping surface, wherein the clamping state is associated with the detected vibration of the one or more of the clamping device and workpiece.

公开(公告)号：US20180197761A1

公开(公告)日：2018-07-12

申请号：US15866209

申请日：2018-01-09

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara ,  Brian Terry ,  John Baggett

IPC: H01L21/67 ,  C23C14/48 ,  H01L21/683 ,  H01L21/687 ,  C23C14/56 ,  H01J37/317

CPC classification number: H01L21/67248 ,  C23C14/48 ,  C23C14/56 ,  H01J37/3171 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6833 ,  H01L21/68728

Abstract: A heated chuck for an ion implantation system selectively clamps a workpiece to a carrier plate having heaters to selectively heat a clamping surface. A gap between a base plate and carrier plate of the heated chuck contains a heat transfer media. A cooling fluid source is coupled to cooling channels in the base plate. A controller operates the heated chuck in a first mode and second mode. In the first mode, the controller does not activate the heaters and flows the cooling fluid through the cooling channel, where heat is transferred through the heat transfer media and to the cooling fluid. In the second mode, the controller activates the heaters and optionally purges the cooling fluid from the cooling channel or otherwise alters its cooling capacity. A gas can be selectively provided in the gap to further control heat transfer in the first and second modes.

公开(公告)号：US20180144904A1

公开(公告)日：2018-05-24

申请号：US15807664

申请日：2017-11-09

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08 ,  C01B25/10 ,  C01B32/50 ,  C01B32/40 ,  C01B25/12 ,  C01F17/00 ,  C01G41/00 ,  C01B7/20 ,  C23C14/48

CPC classification number: H01J37/08 ,  C01B7/20 ,  C01B25/10 ,  C01B25/12 ,  C01B32/40 ,  C01B32/50 ,  C01F17/00 ,  C01G41/00 ,  C23C14/48 ,  H01J37/3171

Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.

公开(公告)号：US20180138006A1

公开(公告)日：2018-05-17

申请号：US15350832

申请日：2016-11-14

Applicant: Axcelis Technologies, Inc.

Inventor： John Baggett ,  Neil Colvin

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/022 ,  H01J2237/038

Abstract: An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

公开(公告)号：US09941087B2

公开(公告)日：2018-04-10

申请号：US15410711

申请日：2017-01-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul b. Silverstein

IPC: H01J7/24 ,  H05B31/26 ,  H01J17/06 ,  H01J17/18 ,  H01J27/08 ,  H01J27/02

CPC classification number: H01J17/06 ,  H01J17/186 ,  H01J27/022 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/061

Abstract: An ion source has an arc chamber having an arc chamber body. An electrode extends into an interior region of the arc chamber body, and a cathode shield has a body that is cylindrical having an axial hole. The axial hole is configured to pass the electrode therethrough. First and second ends of the body have respective first and second gas conductance limiters. The first gas conductance limiter extends from an outer diameter of the body and has a U-shaped lip. The second gas conductance limiter has a recess for a seal to protect the seal from corrosive gases and maintain an integrity of the seal. A gas source introduces a gas to the arc chamber body. A liner has an opening configured to pass the cathode shield therethrough, where the liner has a recess. A gap is defined between the U-shaped lip and the liner, wherein the U-shaped lip reduces a conductance of gas into the gap and the recess further reduces conductance of gas into the region.

公开(公告)号：US20180094921A1

公开(公告)日：2018-04-05

申请号：US15281757

申请日：2016-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Joseph Ferrara

IPC: G01B11/27 ,  G01N21/59 ,  G01N21/84 ,  H01L21/68

CPC classification number: G01B11/272 ,  G01N21/59 ,  G01N21/84 ,  G01N21/9505 ,  G01N2021/8416 ,  H01L21/67242 ,  H01L21/681

Abstract: A workpiece alignment system has a workpiece support to support a workpiece. A first light emitter directs a first light beam toward the workpiece. A first light receiver receives the first light beam. A rotation device rotates the workpiece support about a support axis. A second light emitter directs a second light beam toward a peripheral region of the workpiece. A second light receiver receives the second light beam concurrent with the rotation of the workpiece. A controller determines a transmissivity of the workpiece based on a total initial emittance of the first light beam a transmission of the first light beam through the workpiece. The controller determines a position of the workpiece with respect to the support axis based, at least in part, on a rotational position of the workpiece, a portion of the second light beam received, and the determined transmissivity.

公开(公告)号：US09911636B1

公开(公告)日：2018-03-06

申请号：US15281600

申请日：2016-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Allan D. Weed

IPC: H01J37/36 ,  H01J37/317 ,  H01L21/677 ,  H01L21/683 ,  H01L21/687 ,  H01L21/265 ,  H01J37/20 ,  H01J37/18

CPC classification number: H01L21/67742 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/67069 ,  H01L21/67213 ,  H01L21/67718 ,  H01L21/67745 ,  H01L21/67754 ,  H01L21/67757 ,  H01L21/6833 ,  H01L21/68707 ,  H01L21/68728

Abstract: An electrostatic chuck and gripping system are configured for clamping and processing workpieces having differing diameters. An ion implantation apparatus selectively provides ions to a first workpiece and a second workpiece in a process chamber, where a diameter of the first workpiece is greater the second workpiece. A chuck supports the respective first or second workpiece within the process chamber during exposure to the ions. A load lock chamber isolates a process environment from an external environment and has a workpiece support for the respective first or second workpiece during a transfer of the first or second workpiece between the process chamber and the external environment. A vacuum robot transfers the first or second workpiece between the chuck and workpiece support, and has a gripper mechanism configured to selectively grip the first or second workpiece between a plurality of stepped guides.

公开(公告)号：US09871473B2

公开(公告)日：2018-01-16

申请号：US14855667

申请日：2015-09-16

Applicant: Axcelis Technologies, Inc.

Inventor： Edward K. McIntyre ,  Thang D. Nguyen

IPC: H01T23/00 ,  H02N13/00 ,  H01L21/683 ,  H01L21/687

CPC classification number: H02N13/00 ,  H01L21/6833 ,  H01L21/68742

Abstract: A system and method for clamping a workpiece to an electrostatic clamp (ESC) comprises placing a first workpiece on a surface of the ESC and applying a first set of clamping parameters to the ESC, therein clamping the first workpiece to the surface of the ESC with a first clamping force. A degree of clamping of the workpiece to the ESC is determined and the application of the first set of clamping parameters to the ESC is halted based on a process recipe. A second set of clamping parameters is applied to the ESC after halting the application of the first set of clamping parameters to the ESC, and the workpiece is removed from the surface of the ESC concurrent with the application of the second set of clamping parameters to the ESC when the degree of clamping of the workpiece to the ESC is less than or approximately equal to a threshold clamping value. The second set of clamping parameters to the ESC is further halted after removing the workpiece from the surface of the ESC.

公开(公告)号：US09679739B2

公开(公告)日：2017-06-13

申请号：US14978089

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/00 ,  H01J37/12 ,  H01J37/05 ,  H01J37/147 ,  H01J37/20 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/12 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/20 ,  H01J37/30 ,  H01J37/3171 ,  H01J2237/31705

Abstract: A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.

公开(公告)号：US09607803B2

公开(公告)日：2017-03-28

申请号：US14817893

申请日：2015-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01J37/00 ,  H01J37/20 ,  H01J37/317 ,  H01J37/18 ,  H01L21/683

CPC classification number: H01J37/20 ,  H01J37/185 ,  H01J37/3171 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/31705 ,  H01L21/26593 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.