公开(公告)号：US09607803B2

公开(公告)日：2017-03-28

申请号：US14817893

申请日：2015-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01J37/00 ,  H01J37/20 ,  H01J37/317 ,  H01J37/18 ,  H01L21/683

CPC classification number: H01J37/20 ,  H01J37/185 ,  H01J37/3171 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/31705 ,  H01L21/26593 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.

公开(公告)号：US20170040141A1

公开(公告)日：2017-02-09

申请号：US14817893

申请日：2015-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01J37/20 ,  H01J37/18 ,  H01L21/683 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/185 ,  H01J37/3171 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/31705 ,  H01L21/26593 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.

Abstract translation: 离子注入系统具有处理室，其具有工艺环境，以及离子注入装置，被配置为将离子注入到由处理室内的卡盘支撑的工件中。 加载锁定室将工艺（真空）环境与大气环境隔离，其中负载锁定工件支撑件支撑其中的工件。 隔离室通过在其中限定的植入前冷却环境耦合到处理室。 隔离闸阀选择性地将植入前冷却环境与过程环境隔离，其中隔离室包括用于支撑和冷却工件的植入物前冷却工件支撑件。 隔离闸阀是工件进出隔离室的唯一进入路径。 加压气体选择性地将植入物前冷却环境加压到大于工艺压力的植入前冷却压力，以便于快速冷却工件。 工件传送臂在加载锁定室，隔离室和卡盘之间传送工件。 控制器控制工件传送臂通过隔离闸阀，预植入物冷却工件支撑件和加压气体源的控制，以预植入物冷却压力选择性地将工件冷却至隔离室中的植入前冷却温度。

公开(公告)号：US20150380285A1

公开(公告)日：2015-12-31

申请号：US14317778

申请日：2014-06-27

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/265

CPC classification number: H01L21/67201 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67213 ,  H01L21/67712

Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.

Abstract translation: 离子注入系统具有耦合到第一和第二双负载锁定组件的离子注入装置，每个具有由公共壁分隔的相应的第一和第二室。 每个第一室具有构造成将工件加热到第一温度的预热装置。 每个第二腔室具有后冷却装置，其被配置为将工件冷却至第二温度。 热卡盘将工件保持在用于离子注入的处理室中，并且热卡盘构造成将工件加热到第三温度。 泵和排气口与第一和第二室选择性地流体连通。 控制器被配置为经由预热装置在大气环境中将工件加热到第一温度，以经由热卡盘将工件加热到第二温度，以通过离子注入装置将离子注入工件，并且 通过预热装置，后冷却装置，泵，通风口和热卡盘的控制在大气和真空环境之间传送工件。

公开(公告)号：US09378992B2

公开(公告)日：2016-06-28

申请号：US14317778

申请日：2014-06-27

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01J37/18 ,  H01J37/20 ,  H01L21/67 ,  H01L21/265 ,  H01L21/677 ,  H01J37/317

CPC classification number: H01L21/67201 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67213 ,  H01L21/67712

Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.

Abstract translation: 离子注入系统具有耦合到第一和第二双负载锁定组件的离子注入装置，每个具有由公共壁分隔的相应的第一和第二室。 每个第一室具有构造成将工件加热到第一温度的预热装置。 每个第二腔室具有后冷却装置，其构造成将工件冷却至第二温度。 热卡盘将工件保持在用于离子注入的处理室中，并且热卡盘构造成将工件加热到第三温度。 泵和排气口与第一和第二室选择性地流体连通。 控制器被配置为经由预热装置在大气环境中将工件加热到第一温度，以经由热卡盘将工件加热到第二温度，以通过离子注入装置将离子注入工件，并且 通过预热装置，后冷却装置，泵，通风口和热卡盘的控制在大气和真空环境之间传送工件。