公开(公告)号：US12051561B2

公开(公告)日：2024-07-30

申请号：US18345618

申请日：2023-06-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Edward Moore

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/05

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

公开(公告)号：US11756772B2

公开(公告)日：2023-09-12

申请号：US16887571

申请日：2020-05-29

Applicant: Axcelis Technologies, Inc.

Inventor： David Sporleder ,  Neil Bassom ,  Neil K. Colvin ,  Mike Ameen ,  Xiao Xu

IPC: H01J37/32 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/32504 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/3244 ,  H01J2237/006

Abstract: An ion source assembly and method has a source gas supply to provide a molecular carbon source gas to an ion source chamber. A source gas flow controller controls flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas to form carbon ions and radicals. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. An oxidizing co-gas supply provides oxidizing co-gas to chamber. An oxidizing co-gas flow controller controls flow of the oxidizing co-gas to the chamber. The oxidizing co-gas decomposes and reacts with carbonaceous residues and atomic carbon forming carbon monoxide and carbon dioxide within the ion source chamber. A vacuum pump system removes the carbon monoxide and carbon dioxide, where deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source is increased.

公开(公告)号：US20210090841A1

公开(公告)日：2021-03-25

申请号：US16953509

申请日：2020-11-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Richard Rzeszut ,  Wendy Colby

IPC: H01J37/08 ,  H01J37/317

Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

公开(公告)号：US20170362699A1

公开(公告)日：2017-12-21

申请号：US15627952

申请日：2017-06-20

Applicant: Axcelis Technologies, Inc.

Inventor： Dennis Elliott Kamenitsa ,  Richard J. Rzeszut ,  Fernando M. Silva ,  Neil K. Colvin

IPC: C23C16/12 ,  C01F7/48 ,  C01B7/13 ,  C23C16/448 ,  H01L21/306 ,  H01L21/02

CPC classification number: C23C16/12 ,  C01B7/135 ,  C01B31/36 ,  C01F7/48 ,  C23C14/48 ,  C23C16/448 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/31705 ,  H01L21/02019 ,  H01L21/02167 ,  H01L21/26506 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

公开(公告)号：US20230352265A1

公开(公告)日：2023-11-02

申请号：US18345618

申请日：2023-06-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Edward Moore

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/05

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

公开(公告)号：US09978555B2

公开(公告)日：2018-05-22

申请号：US15344502

申请日：2016-11-04

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08 ,  H01J37/317 ,  H01J27/02

CPC classification number: H01J37/08 ,  H01J27/022 ,  H01J37/3171 ,  H01J2237/31705

Abstract: An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap.

公开(公告)号：US20180096828A1

公开(公告)日：2018-04-05

申请号：US15281844

申请日：2016-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/32 ,  H01J37/317 ,  C23C14/48

CPC classification number: H01J37/32862 ,  C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/18 ,  H01J2237/31705

Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber. An inert gas is further introduced and ionized to counteract oxidation of a cathode due to the decomposition of the hydrogen peroxide. A vacuum pump system removes the hydrocarbons from the ion source chamber, wherein deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

公开(公告)号：US20170133193A1

公开(公告)日：2017-05-11

申请号：US15344502

申请日：2016-11-04

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J27/022 ,  H01J37/3171 ,  H01J2237/31705

Abstract: An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap.

公开(公告)号：US20190228943A1

公开(公告)日：2019-07-25

申请号：US16252884

申请日：2019-01-21

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Richard Rzeszut ,  Wendy Colby

IPC: H01J37/08 ,  H01J37/317

Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

公开(公告)号：US20180358202A1

公开(公告)日：2018-12-13

申请号：US16102868

申请日：2018-08-14

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul B. Silverstein

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3002 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061

Abstract: An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.