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公开(公告)号:CN103681614A
公开(公告)日:2014-03-26
申请号:CN201310218344.5
申请日:2013-06-04
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/538 , H01L21/60
CPC分类号: H01L24/02 , H01L21/4853 , H01L21/76885 , H01L23/49811 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02125 , H01L2224/02141 , H01L2224/02145 , H01L2224/0215 , H01L2224/0401 , H01L2224/05114 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05647 , H01L2224/10125 , H01L2224/11013 , H01L2224/11019 , H01L2224/1112 , H01L2224/11462 , H01L2224/11472 , H01L2224/13012 , H01L2224/13015 , H01L2224/13017 , H01L2224/13023 , H01L2224/13026 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13551 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/13582 , H01L2224/136 , H01L2224/13686 , H01L2224/1369 , H01L2224/14051 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/81007 , H01L2224/81143 , H01L2224/81191 , H01L2224/81203 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/8181 , H01L2224/81895 , H01L2224/8192 , H01L2224/81948 , H01L2225/06513 , H01L2924/04941 , H01L2924/07025 , H01L2924/181 , H01L2924/301 , H01L2924/35 , Y10T29/49144 , H01L2924/00014 , H01L2924/014 , H01L2924/05432 , H01L2924/053 , H01L2924/00 , H01L2924/00012
摘要: 一种迹线上凸块(BOT)结构包括由集成电路支撑的接触元件、电连接到接触元件的凸块下金属化(UBM)部件、位于凸块下金属化部件上的金属凸块以及位于基板上的基板迹线。基板迹线通过焊料接点和介面合金共化物连接到金属凸块;介面合金共化物的第一横截面积和焊料接点的第二横截面积的比率大于40%。
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公开(公告)号:CN103681562A
公开(公告)日:2014-03-26
申请号:CN201310222219.1
申请日:2013-06-05
申请人: 台湾积体电路制造股份有限公司
IPC分类号: H01L23/488 , H01L21/48
CPC分类号: H01L24/02 , H01L21/4853 , H01L21/76885 , H01L23/49811 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02125 , H01L2224/02141 , H01L2224/02145 , H01L2224/0215 , H01L2224/0401 , H01L2224/05114 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05647 , H01L2224/10125 , H01L2224/11013 , H01L2224/11019 , H01L2224/1112 , H01L2224/11462 , H01L2224/11472 , H01L2224/13012 , H01L2224/13015 , H01L2224/13017 , H01L2224/13023 , H01L2224/13026 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13551 , H01L2224/13564 , H01L2224/13565 , H01L2224/1357 , H01L2224/13582 , H01L2224/136 , H01L2224/13686 , H01L2224/1369 , H01L2224/14051 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2224/16503 , H01L2224/81007 , H01L2224/81143 , H01L2224/81191 , H01L2224/81203 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/8181 , H01L2224/81895 , H01L2224/8192 , H01L2224/81948 , H01L2225/06513 , H01L2924/04941 , H01L2924/07025 , H01L2924/181 , H01L2924/301 , H01L2924/35 , Y10T29/49144 , H01L2924/00014 , H01L2924/014 , H01L2924/05432 , H01L2924/053 , H01L2924/00 , H01L2924/00012
摘要: 本发明涉及梯状凸块结构及其制造方法,其包括通过衬底支撑的凸块下金属化(UBM)部件,安装在该UBM部件上的铜柱,具有锥形弯曲轮廓的铜柱,该铜柱在一个实施例中具有大于顶部临界尺寸(CD)的底部临界尺寸(CD),安装在铜柱上的金属盖以及安装在金属盖上的焊料部件。
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公开(公告)号:CN102169845B
公开(公告)日:2013-08-14
申请号:CN201110042643.9
申请日:2011-02-22
申请人: 中国科学院微电子研究所
IPC分类号: H01L21/60 , H01L21/603 , B23K1/00 , H01L23/00 , H01L23/488
CPC分类号: B23K1/0016 , B23K2101/40 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/13019 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16503 , H01L2224/17181 , H01L2224/2919 , H01L2224/3012 , H01L2224/30181 , H01L2224/73103 , H01L2224/73203 , H01L2224/81193 , H01L2224/81203 , H01L2224/81395 , H01L2224/8181 , H01L2224/81986 , H01L2224/83855 , H01L2224/9205 , H01L2224/9211 , H01L2924/00014 , H01L2924/0002 , H01L2924/01055 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/09701 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要: 本发明涉及一种用于三维封装的多层混合同步键合结构及方法。所述方法包括:在一个待混合键合衬底的金属焊盘表面上形成硬金属锥形阵列;在另一个待混合键合衬底的金属焊盘表面上形成软金属层;在两个待混合键合衬底的非金属焊盘表面形成介电粘附层;将硬金属锥形阵列和软金属层对准,进行加热和加压后,使得锥形金属阵列插入到软金属层中,同时介电粘附层相互结合,形成一种混合预键合结构;再进行加热,使插入到软金属层中的锥形金属阵列形成金属间化合物,介电粘附层固化结合。与传统的键合方法相比,本发明方法成品率高,节省键合时间,降低成本,同时提高产品的可靠性。
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公开(公告)号:CN102956603A
公开(公告)日:2013-03-06
申请号:CN201210285703.4
申请日:2012-08-10
申请人: 索尼公司
IPC分类号: H01L23/498 , H01L21/48
CPC分类号: H01L24/81 , H01L21/563 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/50 , H01L27/14618 , H01L27/14683 , H01L2224/0401 , H01L2224/05567 , H01L2224/1134 , H01L2224/11416 , H01L2224/11436 , H01L2224/11825 , H01L2224/11848 , H01L2224/13019 , H01L2224/13076 , H01L2224/13147 , H01L2224/1319 , H01L2224/13562 , H01L2224/1357 , H01L2224/13655 , H01L2224/16238 , H01L2224/16503 , H01L2224/2919 , H01L2224/73104 , H01L2224/73204 , H01L2224/8102 , H01L2224/81193 , H01L2224/81355 , H01L2224/81411 , H01L2224/81413 , H01L2224/81805 , H01L2224/8181 , H01L2224/81815 , H01L2224/81951 , H01L2224/83104 , H01L2224/83191 , H01L2224/83862 , H01L2224/94 , H01L2225/06513 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/15321 , H01L2924/15788 , H01L2924/01083 , H01L2924/01049 , H01L2924/00012 , H01L2224/11 , H01L2224/27416 , H01L2224/27436 , H01L2224/05552 , H01L2924/00
摘要: 本发明提供半导体设备、半导体设备的制造方法以及电子设备。该半导体设备包括:半导体部件;Cu柱形凸块,形成在半导体部件上;以及焊料凸块,构造为电连接到Cu柱形凸块。
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公开(公告)号:CN101958298A
公开(公告)日:2011-01-26
申请号:CN201010206061.5
申请日:2010-06-13
申请人: 瑞萨电子株式会社
IPC分类号: H01L23/488 , H01L21/60
CPC分类号: H01L24/11 , H01L24/16 , H01L2224/05647 , H01L2224/13099 , H01L2224/16503 , H01L2224/16507 , H01L2224/45144 , H01L2224/49171 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/48
摘要: 本发明提供一种半导体器件及其制造方法,其中半导体器件层叠了半导体芯片或层叠了安装有半导体芯片的布线衬底,在此器件中,层叠了半导体芯片或布线衬底的电极间的连接结构(1)包括:以Cu为主要成分的一对电极(2,3);和夹在一对电极(2,3)之间的由Sn-In类合金形成的焊料层(5),在该焊料层(5)中分散有Sn-Cu-Ni化合物(6)。能在低温、低负荷下可靠连接,连接部即使在层叠工艺、其后的安装工艺等中被加热也能保持形状。
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公开(公告)号:CN101587872A
公开(公告)日:2009-11-25
申请号:CN200910141048.3
申请日:2009-05-18
申请人: 夏普株式会社
发明人: 大西雄也
IPC分类号: H01L23/482 , H01L23/48 , H01L23/14 , H01L21/60
CPC分类号: H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/05001 , H01L2224/05026 , H01L2224/05568 , H01L2224/13076 , H01L2224/1308 , H01L2224/13099 , H01L2224/16 , H01L2224/16503 , H01L2224/16507 , H01L2224/81191 , H01L2224/81203 , H01L2224/814 , H01L2224/81815 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15787 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要: 本发明涉及半导体装置、半导体装置安装方法和半导体装置安装结构。本发明的半导体装置在半导体基板的电极和Cu凸点上沉积金属凸点层,其中,该金属凸点层具有Cu层和焊料层,该焊料层用于进行基于金属键合方式的键合以及进行电连接,该Cu层用于通过与该焊料层进行相互扩散而形成金属间化合物。由此,能够提供一种在利用了金属键合的倒装芯片安装中既不降低安装可靠性,又能够提高键合强度的半导体装置。
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公开(公告)号:CN207166882U
公开(公告)日:2018-03-30
申请号:CN201590001036.X
申请日:2015-10-09
申请人: 株式会社村田制作所
发明人: 加藤登
CPC分类号: H01L23/5389 , G06K19/077 , H01L23/14 , H01L23/145 , H01L23/29 , H01L23/31 , H01L23/3121 , H01L23/5383 , H01L23/5385 , H01L23/5386 , H01L23/5387 , H01L23/66 , H01L24/17 , H01L25/0652 , H01L2223/6677 , H01L2224/16225 , H01L2224/16227 , H01L2224/16503 , H01L2924/0002 , H01L2924/1421 , H01L2924/181 , H01L2924/19102 , H01L2924/19105 , H01Q1/2225 , H01Q1/38 , H01Q1/405 , H01Q7/00 , H03H7/38 , H04B1/59 , H05K1/181 , H05K1/185 , H05K3/4632 , H05K2201/0129 , H05K2201/09527 , H05K2201/10098 , H01L2924/00012 , H01L2924/00
摘要: 复合器件(101)具备基板(10)和安装在基板(10)的表面或内部的安装部件(20)。基板(10)具有第一热塑性树脂层,安装部件(20)在表面具有与第一热塑性树脂层为同种材料的至少第二热塑性树脂层,在第二热塑性树脂层与第一热塑性树脂层之间,形成有第二热塑性树脂与第一热塑性树脂的接合层(30)。
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