公开(公告)号：US20140048805A1

公开(公告)日：2014-02-20

申请号：US13982697

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou

IPC分类号： H01L21/322 ,  H01L29/04 ,  H01L29/36 ,  H01L21/263

CPC分类号： H01L21/3221 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  H01J37/317 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/263 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L29/04 ,  H01L29/36

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

公开(公告)号：US09601350B2

公开(公告)日：2017-03-21

申请号：US13982697

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： H01L21/322 ,  B23K1/20 ,  B23K20/24 ,  H01L21/67 ,  H01L21/762 ,  H01L21/302 ,  H01L21/02 ,  H01L21/263 ,  H01L29/04 ,  H01L29/36 ,  H01L21/20 ,  H01J37/317

CPC分类号： H01L21/3221 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  H01J37/317 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/263 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L29/04 ,  H01L29/36

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

公开(公告)号：US20140037945A1

公开(公告)日：2014-02-06

申请号：US13982686

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： B32B38/08 ,  B32B7/04

CPC分类号： B32B38/08 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  B32B7/04 ,  H01J37/317 ,  H01J2237/08 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L23/147 ,  H01L23/5252 ,  H01L2924/0002 ,  Y10T428/265 ,  Y10T428/31678 ,  H01L2924/00

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

摘要翻译： [问题]提供具有广泛应用的基板接合技术。 [解决方案]在接合表面上形成硅薄膜，并且使用高能粒子/金属颗粒对与基板的界面进行表面处理。

公开(公告)号：US10166749B2

公开(公告)日：2019-01-01

申请号：US13982686

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： H01L21/20 ,  B32B38/08 ,  B23K1/20 ,  B23K20/24 ,  H01L21/67 ,  H01L21/762 ,  H01L21/302 ,  H01L21/02 ,  H01L23/525 ,  B32B7/04 ,  H01J37/317 ,  B23K101/36 ,  H01L23/14

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

公开(公告)号：US20060085965A1

公开(公告)日：2006-04-27

申请号：US10528690

申请日：2003-09-22

申请人： Tadatomo Suga ,  Toshihiro Ito ,  Akira Yamauchi

发明人： Tadatomo Suga ,  Toshihiro Ito ,  Akira Yamauchi

IPC分类号： B23P11/00

CPC分类号： H01L24/81 ,  H01L2224/13144 ,  H01L2224/75 ,  H01L2224/7501 ,  H01L2224/751 ,  H01L2224/81801 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/49144 ,  Y10T29/49908 ,  Y10T29/49924 ,  Y10T29/5313 ,  Y10T29/53174 ,  H01L2224/0401

摘要： A device and method for bonding objects to be bonded each having a metal bonding portion on a substrate, comprising cleaning means for exposing the metal bonding portions to a plasma having an energy enough to etch the surfaces of the metal bonding portions at a depth of 1.6 nm or more over the entire surfaces of the metal bonding portions under a reduced pressure and bonding means for bonding the metal bonding portions of the objects taken out of the cleaning means in an atmospheric air. By using a specific scheme, metal bonding portions after the plasma cleaning can be bonded in the atmospheric air, thereby significantly simplifying the bonding process and the whole device and lowering the cost.

摘要翻译： 一种用于将每个具有金属接合部分的要被接合的物体接合在基板上的装置和方法，包括用于将金属接合部分暴露于等离子体的清洁装置，该等离子体具有足以在深度1.6刻蚀金属接合部分的表面的能量 在减压下的金属接合部的整个表面上的nm以上的粘合装置和用于将从清洁装置中取出的物体的金属接合部分接合在大气中的接合装置。 通过使用具体的方案，等离子体清洗后的金属接合部分可以粘结在大气中，从而大大简化了接合工艺和整个器件，降低了成本。

公开(公告)号：US07591293B2

公开(公告)日：2009-09-22

申请号：US10528690

申请日：2003-09-22

申请人： Tadatomo Suga ,  Toshihiro Ito ,  Akira Yamauchi

发明人： Tadatomo Suga ,  Toshihiro Ito ,  Akira Yamauchi

IPC分类号： G05G15/00 ,  B23K1/14 ,  B23K26/00

CPC分类号： H01L24/81 ,  H01L2224/13144 ,  H01L2224/75 ,  H01L2224/7501 ,  H01L2224/751 ,  H01L2224/81801 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/49144 ,  Y10T29/49908 ,  Y10T29/49924 ,  Y10T29/5313 ,  Y10T29/53174 ,  H01L2224/0401

摘要： A device and method for bonding objects to be bonded each having a metal bonding portion on a substrate, comprising cleaning means for exposing the metal bonding portions to a plasma having an energy enough to etch the surfaces of the metal bonding portions at a depth of 1.6 nm or more over the entire surfaces of the metal bonding portions under a reduced pressure and bonding means for bonding the metal bonding portions of the objects taken out of the cleaning means in an atmospheric air. By using a specific scheme, metal bonding portions after the plasma cleaning can be bonded in the atmospheric air, thereby significantly simplifying the bonding process and the whole device and lowering the cost.

摘要翻译： 一种用于将每个具有金属接合部分的要被接合的物体接合在基板上的装置和方法，包括用于将金属接合部分暴露于等离子体的清洁装置，该等离子体具有足以在深度1.6刻蚀金属接合部分的表面的能量 在减压下的金属接合部的整个表面上的nm以上的粘合装置和用于将从清洁装置中取出的物体的金属接合部分接合在大气中的接合装置。 通过使用具体的方案，等离子体清洗后的金属接合部分可以粘结在大气中，从而大大简化了接合工艺和整个器件，降低了成本。

公开(公告)号：US10204785B2

公开(公告)日：2019-02-12

申请号：US15810932

申请日：2017-11-13

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/18 ,  B23K20/00 ,  H01L21/02 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32 ,  H01L21/67 ,  H01L25/065 ,  H01L21/762

摘要： A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

公开(公告)号：US11837444B2

公开(公告)日：2023-12-05

申请号：US16347590

申请日：2017-11-06

申请人： BONDTECH CO., LTD. ,  Tadatomo Suga

发明人： Akira Yamauchi ,  Tadatomo Suga

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32816 ,  H01J2237/201 ,  H01J2237/338 ,  H01J2237/3341

摘要： The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

公开(公告)号：US09142532B2

公开(公告)日：2015-09-22

申请号：US14397038

申请日：2013-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  B23K31/02 ,  B23K37/00 ,  B23K37/04 ,  H01L21/66 ,  H01L25/10 ,  H01L23/10 ,  H01L21/683

CPC分类号： H01L25/0652 ,  B23K31/02 ,  B23K37/00 ,  B23K37/0408 ,  B23K2101/40 ,  H01L21/6836 ,  H01L22/10 ,  H01L23/10 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/74 ,  H01L24/742 ,  H01L24/743 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/95 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06134 ,  H01L2224/0615 ,  H01L2224/06177 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13009 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14134 ,  H01L2224/1415 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/27009 ,  H01L2224/2755 ,  H01L2224/27823 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75283 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/7531 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/7598 ,  H01L2224/80003 ,  H01L2224/8001 ,  H01L2224/80013 ,  H01L2224/80065 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/8022 ,  H01L2224/8023 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/8101 ,  H01L2224/81013 ,  H01L2224/81065 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/8122 ,  H01L2224/8123 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/8183 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83048 ,  H01L2224/83051 ,  H01L2224/83065 ,  H01L2224/83091 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83143 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83234 ,  H01L2224/83355 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2924/00

摘要： [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

摘要翻译： [问题]提供了一种将芯片有效地接合到晶片上以建立电连接并提高芯片和晶片之间或芯片之间的机械强度的技术，该芯片是在树脂和其它不期望的残留物的状态下彼此层压的芯片 不保留在它们之间的结合界面上。 [解决方案]将具有金属区域的具有芯片侧接合面的多个芯片接合到具有多个结合部的基板的方法具有将芯片侧接合面的金属区域 表面活化处理和亲水处理; 对所述基板的所述接合部进行表面活化处理和亲水化处理的工序（S2） 将经过表面活化处理和亲水化处理的芯片装配到经过表面活化处理的基板的相应接合部分和亲水化处理上以使芯片的金属区域与键接触的步骤（S3） 基板的一部分; 以及加热包括基板的所得结构和安装在基板上的芯片的步骤（S4）。

公开(公告)号：US09870922B2

公开(公告)日：2018-01-16

申请号：US15306303

申请日：2015-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/18 ,  B23K20/00 ,  H01L21/02 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32

CPC分类号： H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

摘要： A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).