Invention Grant
- Patent Title: Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
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Application No.: US13982697Application Date: 2012-01-30
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Publication No.: US09601350B2Publication Date: 2017-03-21
- Inventor: Tadatomo Suga , Akira Yamauchi , Ryuichi Kondou , Yoshiie Matsumoto
- Applicant: Tadatomo Suga , Akira Yamauchi , Ryuichi Kondou , Yoshiie Matsumoto
- Applicant Address: JP Kyoto JP Tokyo JP Tokyo JP Tokyo
- Assignee: BONDTECH CO., LTD.,TAIYO YUDEN CO., LTD.,LAN TECHNICAL SERVICE CO., LTD.,Tadatomo Suga
- Current Assignee: BONDTECH CO., LTD.,TAIYO YUDEN CO., LTD.,LAN TECHNICAL SERVICE CO., LTD.,Tadatomo Suga
- Current Assignee Address: JP Kyoto JP Tokyo JP Tokyo JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2011-019026 20110131
- International Application: PCT/JP2012/051935 WO 20120130
- International Announcement: WO2012/105473 WO 20120809
- Main IPC: H01L21/322
- IPC: H01L21/322 ; B23K1/20 ; B23K20/24 ; H01L21/67 ; H01L21/762 ; H01L21/302 ; H01L21/02 ; H01L21/263 ; H01L29/04 ; H01L29/36 ; H01L21/20 ; H01J37/317
Abstract:
[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.
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