公开(公告)号：US11121003B2

公开(公告)日：2021-09-14

申请号：US16621219

申请日：2018-06-12

申请人： SUMCO Corporation

发明人： Kazuhisa Torigoe ,  Shigeru Umeno ,  Toshiaki Ono

IPC分类号： C30B33/02 ,  H01L21/322 ,  C30B29/06

摘要： Provided is a method of accurately predicting the thermal donor formation behavior in a silicon wafer, a method of evaluating a silicon wafer using the prediction method, and a method of producing a silicon wafer using the evaluation method. The method of predicting the formation behavior of thermal donors, includes: a first step of setting an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond-dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen and a bonding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed through the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed through the heat treatment based on the formation rate of the oxygen clusters.

公开(公告)号：US11094557B2

公开(公告)日：2021-08-17

申请号：US16609021

申请日：2018-06-19

申请人： SUMCO CORPORATION

发明人： Toshiaki Ono ,  Shigeru Umeno

IPC分类号： C30B29/06 ,  H01L21/322 ,  C30B30/04 ,  C30B33/02

摘要： A silicon wafer having a BMD density of 5×108/cm3 or more and 2.5×1010/cm3 or less in a region of 80 μm to 285 μm from the wafer surface when the silicon wafer is heat-treated at a temperature X (° C., 700° C.≤X≤1000° C.) for a time Y (min) and then subjected to an infrared tomography method in which the laser power is set to 50 mW and the exposure time of a detector is set to 50 msec. The time Y and the temperature X satisfy Y=7.88×1067×X−22.5.

公开(公告)号：US09991386B2

公开(公告)日：2018-06-05

申请号：US15138526

申请日：2016-04-26

申请人： SUMCO CORPORATION

发明人： Toshiaki Ono ,  Yumi Hoshino

IPC分类号： H01L21/02 ,  H01L29/78 ,  H01L21/322 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3225 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7847

摘要： A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).

公开(公告)号：US09748112B2

公开(公告)日：2017-08-29

申请号：US15052235

申请日：2016-02-24

申请人： SUMCO CORPORATION

发明人： Jun Fujise ,  Toshiaki Ono

IPC分类号： H01L21/66 ,  H01L21/322 ,  H01L29/16 ,  H01L29/32 ,  G01N3/24 ,  C30B15/00 ,  C30B13/00 ,  C30B29/06

CPC分类号： H01L21/3225 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  G01N3/24 ,  H01L22/12 ,  H01L22/20 ,  H01L29/16 ,  H01L29/32

摘要： After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress τcri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained size of the oxygen precipitates and residual oxygen concentration; and the obtained critical shear stress τcri and the thermal stress τ applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress τ is equal to or more than the critical shear stress τcri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress τ is less than the critical shear stress τcri.

公开(公告)号：US10777704B2

公开(公告)日：2020-09-15

申请号：US15773391

申请日：2016-11-01

申请人： SUMCO CORPORATION

发明人： Koji Matsumoto ,  Toshiaki Ono ,  Hiroshi Amano ,  Yoshio Honda

IPC分类号： H01L33/12 ,  C23C16/34 ,  H01L33/32 ,  H01L21/02 ,  C30B29/38 ,  H01L21/302 ,  H01L33/22 ,  C30B25/02 ,  C30B29/40 ,  H01L29/20 ,  H01L29/34 ,  H01L33/00 ,  H01L33/02

摘要： A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.

公开(公告)号：US10020203B1

公开(公告)日：2018-07-10

申请号：US15399981

申请日：2017-01-06

申请人： SUMCO CORPORATION

发明人： Yasuo Koike ,  Tomokazu Katano ,  Toshiaki Ono

IPC分类号： H01L23/58 ,  H01L21/322 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36 ,  H01L21/02 ,  C30B29/06 ,  C30B29/64 ,  C30B15/20

摘要： An epitaxial silicon wafer includes a silicon wafer consisting of a COP region in which a nitrogen concentration is 1×1012−1×1013 atoms/cm3, and an epitaxial silicon film formed on the silicon wafer. When heat treatment for evaluation is applied, a density of BMD formed inside the silicon wafer is 1×108−3×109 atoms/cm3 over the entire radial direction of the silicon wafer. An average density of the BMD formed in an outer peripheral region of the silicon wafer which is a 1-10 mm range separated inward from an outermost periphery thereof is lower than the average density of the BMD formed in a center region. A variation in the BMD density in the outer peripheral region is 3 or less, and a residual oxygen concentration in the outer peripheral region is 8×1017 atoms/cm3 or more.

公开(公告)号：US09412622B2

公开(公告)日：2016-08-09

申请号：US14781709

申请日：2013-10-09

申请人： SUMCO CORPORATION

发明人： Toshiaki Ono ,  Shigeru Umeno

IPC分类号： H01L29/30 ,  H01L21/322 ,  C30B29/06 ,  C30B15/20 ,  C30B15/04 ,  C30B33/02 ,  H01L29/16 ,  H01L29/36

CPC分类号： H01L21/3225 ,  C30B15/04 ,  C30B15/206 ,  C30B29/06 ,  C30B33/02 ,  H01L29/16 ,  H01L29/32 ,  H01L29/36

摘要： An epitaxial silicon wafer cut from a silicon single crystal grown by the Czochralski method, and having a diameter of 300 mm or more. In this epitaxial silicon wafer, the time required to cool every part of the silicon single crystal during the growth from 800° C. down to 600° C. is set to 450 minutes or less, the interstitial oxygen concentration is from 1.5×1018 to 2.2×1018 atoms/cm3 (old ASTM standard), the entire surface of the cut silicon wafer is composed of a COP region, and the BMD density in the bulk of the epitaxial wafer after a heat treatment at 1000° C. for 16 hours is 1×104/cm2 or less. In this epitaxial silicon wafer, even if the thermal process in a semiconductor device fabrication process is a low temperature thermal process, epitaxial defects do not occur, as well as sufficient gettering capability being obtainable.

摘要翻译： 从由Czochralski法生长的直径为300mm以上的硅单晶切割的外延硅晶片。 在该外延硅晶片中，将从800℃下降至600℃的生长期间的单晶硅单体所需的时间设定为450分钟以下，间隙氧浓度为1.5×10 18〜 2.2×1018原子/ cm3（旧ASTM标准），切割的硅晶片的整个表面由COP区组成，并且在1000℃下热处理16小时后的外延晶片的体积中的BMD密度 为1×10 4 / cm 2以下。 在该外延硅晶片中，即使半导体器件制造工艺中的热处理是低温热处理，也不会发生外延缺陷，以及可获得充分的吸杂能力。

公开(公告)号：US11885038B2

公开(公告)日：2024-01-30

申请号：US16975563

申请日：2019-02-27

申请人： SUMCO CORPORATION

发明人： Wataru Sugimura ,  Ryusuke Yokoyama ,  Toshiyuki Fujiwara ,  Toshiaki Ono

IPC分类号： C30B15/26 ,  C30B15/16 ,  C30B29/06 ,  C30B30/04

CPC分类号： C30B15/26 ,  C30B15/16 ,  C30B29/06 ,  C30B30/04

摘要： A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.

公开(公告)号：US10910328B2

公开(公告)日：2021-02-02

申请号：US16618899

申请日：2018-06-06

申请人： SUMCO CORPORATION

发明人： Bong-Gyun Ko ,  Toshiaki Ono

IPC分类号： H01L23/00 ,  H01L51/00 ,  H01L21/02 ,  H01L23/14 ,  H01L21/304 ,  H01L23/492

摘要： Provided is a silicon wafer manufacturing method capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer manufacturing method according to the present invention is provided with calculating a target thickness of the silicon wafer required for ensuring a warpage reduction amount of a silicon wafer warped during a device process from a relationship between an amount of warpage of a silicon wafer and a thickness thereof occurring due to application of the same film stress to a plurality of silicon wafers having mutually different thicknesses; and processing a silicon single crystal ingot to thereby manufacture silicon wafers having the target thickness.

公开(公告)号：US10192754B2

公开(公告)日：2019-01-29

申请号：US15311307

申请日：2015-04-21

申请人： SUMCO CORPORATION

发明人： Jun Fujise ,  Toshiaki Ono

IPC分类号： H01L21/322 ,  H01L29/32 ,  C30B15/20 ,  C30B33/02 ,  C30B15/00

摘要： A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.