公开(公告)号：US10777704B2

公开(公告)日：2020-09-15

申请号：US15773391

申请日：2016-11-01

申请人： SUMCO CORPORATION

发明人： Koji Matsumoto ,  Toshiaki Ono ,  Hiroshi Amano ,  Yoshio Honda

IPC分类号： H01L33/12 ,  C23C16/34 ,  H01L33/32 ,  H01L21/02 ,  C30B29/38 ,  H01L21/302 ,  H01L33/22 ,  C30B25/02 ,  C30B29/40 ,  H01L29/20 ,  H01L29/34 ,  H01L33/00 ,  H01L33/02

摘要： A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.