公开(公告)号：US10192754B2

公开(公告)日：2019-01-29

申请号：US15311307

申请日：2015-04-21

Applicant: SUMCO CORPORATION

Inventor： Jun Fujise ,  Toshiaki Ono

IPC: H01L21/322 ,  H01L29/32 ,  C30B15/20 ,  C30B33/02 ,  C30B15/00

Abstract: A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.

公开(公告)号：US09995693B2

公开(公告)日：2018-06-12

申请号：US15189309

申请日：2016-06-22

Applicant: SUMCO CORPORATION

Inventor： Jun Fujise ,  Toshiaki Ono

IPC: C30B33/00 ,  G01N21/95 ,  H01L21/66 ,  C30B29/06 ,  C30B33/02 ,  G01N21/3563 ,  H01L21/322 ,  G01N21/35

CPC classification number: G01N21/9501 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  G01N21/3563 ,  G01N2021/3568 ,  G01N2021/3595 ,  G01N2201/12 ,  H01L21/3225 ,  H01L22/12

Abstract: After determining the precipitated oxygen concentration and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress τcri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained precipitated oxygen concentration and residual oxygen concentration; and the obtained critical shear stress τcri and the thermal stress τ applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress τ is equal to or more than the critical shear stress τcri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress τ is less than the critical shear stress τcri.

公开(公告)号：US09748112B2

公开(公告)日：2017-08-29

申请号：US15052235

申请日：2016-02-24

Applicant: SUMCO CORPORATION

Inventor： Jun Fujise ,  Toshiaki Ono

IPC: H01L21/66 ,  H01L21/322 ,  H01L29/16 ,  H01L29/32 ,  G01N3/24 ,  C30B15/00 ,  C30B13/00 ,  C30B29/06

CPC classification number: H01L21/3225 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  G01N3/24 ,  H01L22/12 ,  H01L22/20 ,  H01L29/16 ,  H01L29/32

Abstract: After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress τcri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained size of the oxygen precipitates and residual oxygen concentration; and the obtained critical shear stress τcri and the thermal stress τ applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress τ is equal to or more than the critical shear stress τcri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress τ is less than the critical shear stress τcri.

公开(公告)号：US09243345B2

公开(公告)日：2016-01-26

申请号：US14518594

申请日：2014-10-20

Applicant: SUMCO CORPORATION

Inventor： Toshiaki Ono ,  Wataru Ito ,  Jun Fujise

IPC: H01L21/02 ,  C30B33/02 ,  C30B29/06 ,  H01L21/322 ,  H01L21/67 ,  H01L21/687 ,  C30B23/02 ,  C30B25/18 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36

CPC classification number: C30B33/02 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/3225 ,  H01L21/67115 ,  H01L21/68735 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  Y10S438/918

Abstract: A method of manufacturing a silicon wafer provides a silicon wafer which can reduce the precipitation of oxygen to prevent a wafer deformation from being generated and can prevent a slip extension due to boat scratches and transfer scratches serving as a reason for a decrease in wafer strength, even when the wafer is provided to a rapid temperature-rising-and-falling thermal treatment process.

Abstract translation: 硅晶片的制造方法提供了可以减少氧沉淀以防止晶片变形产生的硅晶片，并且可以防止由于舟状划痕引起的滑移延伸和作为晶片强度降低的原因的转印划痕， 即使当晶片被提供到快速升温和降落的热处理工艺时。