公开(公告)号：US20240068126A1

公开(公告)日：2024-02-29

申请号：US18237001

申请日：2023-08-23

Applicant: SUMCO CORPORATION

Inventor： Fukuo OGAWA ,  Hiroyuki OTA ,  Takashi OHARA

IPC: C30B29/06 ,  C30B15/10 ,  C30B15/16 ,  C30B15/20

CPC classification number: C30B29/06 ,  C30B15/10 ,  C30B15/16 ,  C30B15/20 ,  C30B15/30

Abstract: A method of manufacturing monocrystalline silicon is provided, the method including pulling monocrystalline silicon out of a silicon melt by a Czochralski process, the silicon melt being stored in a crucible housed in a chamber, the silicon melt being added with a volatile dopant, in which a decompression rate ES for exhaust of a gas out of the chamber before the pulling of the monocrystalline silicon is within a range below at least until a pressure inside the chamber decreases from an atmospheric pressure to 80 kPa, 0 kPa/min

公开(公告)号：US20100326349A1

公开(公告)日：2010-12-30

申请号：US12786911

申请日：2010-05-25

Applicant: Masanori FUKUI ,  Hideki WATANABE ,  Nobumitsu TAKASE

Inventor： Masanori FUKUI ,  Hideki WATANABE ,  Nobumitsu TAKASE

IPC: C30B15/20 ,  C30B15/16 ,  C30B15/10

CPC classification number: C30B15/20 ,  C30B15/10 ,  C30B29/06

Abstract: Leakage of silicon melt is monitored and touch of a seed crystal at the silicon melt is detected, and in addition, reinforcement of a vitreous silica crucible to be endurable during pulling for a long time and decrease of impurity concentration of a silicon single crystal can be expected. A method for manufacturing a silicon single crystal is provided. The method includes: detecting touching status of a seed crystal at silicon melt by supplying voltage V1 using a crucible side as a negative electrode and a wire side as a positive electrode and by monitoring change of the voltage, when the seed crystal provided at a front end of the wire touches the silicon melt inside a vitreous silica crucible; devitrifying an inner surface of the vitreous silica crucible as supplying voltage V2 using the crucible side as a positive electrode and the wire side as a negative electrode during a temperature control period; and growing a silicon single crystal by slowly pulling the seed crystal as supplying voltage V3 using the crucible side as a negative electrode and the wire side as a positive electrode after the temperature control period.

Abstract translation: 监测硅熔体的泄漏，并检测硅熔体中的晶种的接触，此外，长时间拉伸和降低硅单晶的杂质浓度可以耐久的石英玻璃坩埚的增强可以是 预期。 提供了制造硅单晶的方法。 该方法包括：通过使用坩埚侧作为负极并且线侧作为正极​​来提供电压V1，并通过监视电压的变化来检测硅熔体处的晶种的触摸状态 导线的末端触及石英玻璃坩埚内的硅熔体; 在温度控制期间，使用坩埚侧作为正极​​而将作为负极的线侧作为供给电压V2而使玻璃状石英玻璃坩埚的内表面失透; 并且通过在坩埚侧作为负极并且在温度控制周期之后将线侧作为正极​​，通过缓慢地拉晶晶体作为供给电压V3来生长硅单晶。

公开(公告)号：US5505159A

公开(公告)日：1996-04-09

申请号：US341530

申请日：1994-11-17

Applicant: Yuji Mochizuki ,  Akira Usui ,  Toshikazu Takada

Inventor： Yuji Mochizuki ,  Akira Usui ,  Toshikazu Takada

IPC: C30B25/02 ,  C30B23/02 ,  C30B23/08 ,  C30B29/40 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  C30B15/16

CPC classification number: C30B23/02 ,  C30B29/40

Abstract: In an epitaxial growth of a group III-V compound semiconductor crystal, there is provided a substrate on which group III element halide molecules are adsorbed. A beam of group V element hydride molecules is supplied toward the substrate for reaction of the group V element hydride and the group III element halide. The vibration energy of each of group V element hydride molecules is excited in the beam and the orientation of the group V element hydride molecules is aligned. As a result, the supplied group V atom directly combines with the group III atom.

Abstract translation: 在III-V族化合物半导体晶体的外延生长中，提供吸附有III族元素卤化物分子的基板。 向基板供给V族元素氢化物分子束，用于V族元素氢化物和III族元素卤化物的反应。 V族元素氢化物分子中的每一个的振动能量在束中被激发，并且V族元素氢化物分子的取向被对准。 结果，所提供的V族原子与III族原子直接结合。

公开(公告)号：US4058699A

公开(公告)日：1977-11-15

申请号：US601157

申请日：1975-08-01

Applicant: Curtis P. van Vloten

Inventor： Curtis P. van Vloten

IPC: B23K26/073 ,  C03B37/029 ,  C30B13/24 ,  C30B15/00 ,  C30B15/16 ,  G02B5/10 ,  H05B7/22 ,  B23K28/00 ,  B01J17/08 ,  F21V7/00

CPC classification number: B23K26/127 ,  B23K26/0643 ,  B23K26/0734 ,  C03B37/029 ,  C30B13/24 ,  C30B15/002 ,  C30B15/16 ,  G02B5/10 ,  H05B7/225 ,  C03B2205/67 ,  Y10S117/904 ,  Y10T117/1088

Abstract: A heating zone of accurately controlled length and predetermined energy profile throughout its length is formed within a focusing apparatus. An elliptical cavity is provided having a conically-configured reflector positioned such that its longitudinal axis coincides with one of the focal axes of the elliptical cavity. An elongate body is placed within the cavity such that its longitudinal axis coincides with the other focal axis. When a beam of radiant energy within a wavelength range which couples with the body to heat it, e.g., a laser beam, is directed onto the conically-configured reflector it is concentrated uniformly around the body throughout a predetermined length. The energy profile along the zone length may be varied either by adjusting the energy distribution in the energy beam prior to being reflected, by modifying the surface contour of the reflector, by modifying the contour of the walls defining the elliptical cavity or by a combination of two or more of these techniques. A plurality of overlapping elliptical cavities may be arranged to have one common axes along which the reflector is positioned and a plurality of axes along which a plurality of elongate bodies are positioned. The apparatus of this invention is particularly suited for heating rods and tubes and, if desired, for use within a controlled atmosphere.

Abstract translation: 在聚焦装置内形成了整个长度的精确控制长度和预定能量分布的加热区。 提供具有圆锥形构造的反射器的椭圆形腔体，其定位成使得其纵向轴线与椭圆形腔体的焦点轴线重合。 细长体被放置在腔体内，使得其纵向轴线与另一个焦点轴线重合。 当波长范围内的辐射能量束与身体耦合以将其加热（例如激光束）被引导到圆锥形配置的反射器上时，其在整个预定长度内均匀地集中在身体周围。 沿着区域长度的能量分布可以通过在反射之前调节能量束中的能量分布来改变，通过修改反射器的表面轮廓，通过修改限定椭圆腔的壁的轮廓，或者通过 两种或更多种这些技术。 多个重叠的椭圆形空腔可以被布置成具有一个共同的轴，反射器沿着该轴线定位，并且多个轴沿着多个细长体定位。 本发明的装置特别适用于加热棒​​和管，并且如果需要，在受控气氛中使用。

公开(公告)号：US3625660A

公开(公告)日：1971-12-07

申请号：US3625660D

申请日：1968-03-18

Applicant: MASSACHUSETTS INST TECHNOLOGY

Inventor： REED THOMAS B ,  POLLARD EDWARD R

IPC: C30B15/16 ,  C30B15/30 ,  B01J17/18

CPC classification number: C30B15/305 ,  C30B15/16 ,  Y10S117/90 ,  Y10S117/902 ,  Y10T117/1068

Abstract: A MELT OR PUDDLE IS FORMED IN A SOLID MATERIAL CONTAINED IN A COLD CRUCIBLE. THE SOLID MATERIAL ACTS AS A SELF-CRUCIBLE FOR THE MELT AND CRYSTALS ARE GROWN AT THE CENTER OF THE MELT. THE MELT IS FORMED IN THE SOLID MATERIAL BY A MULTITUDE OF ARCS STRUCK BETWEEN THE MATERIAL

WHICH MAY ACT AS AN ANODE, AND A MULTITUDE OF CATHODES WHICH ARE DIRECTED TOWARD THE MATERIAL, SO THAT THE ELECTRON AND PLASMA FLOW FROM THE CATHODES TO THE MATERIAL, PRODUCES AND MAINTAINS THE MELT.

公开(公告)号：US11939696B2

公开(公告)日：2024-03-26

申请号：US17610890

申请日：2021-02-12

Applicant: Crystal Systems Corporation

Inventor： Isamu Shindo

IPC: C30B15/10 ,  C30B15/16 ,  C30B15/30 ,  C30B23/00 ,  C30B35/00

CPC classification number: C30B15/16 ,  C30B15/10 ,  C30B15/30 ,  C30B23/00 ,  C30B35/002

Abstract: [Object] To provide a thin plate-shaped single-crystal production equipment and a thin plate-shaped single-crystal production method that can produce a thin plate-shaped single crystal having a uniform dopant concentration at an optimum chemical composition and a thickness of several hundreds of micrometers continuously at low cost with high precision even when the single crystal is a single crystal of an incongruent melting material or a solid solution material or a single crystal of a congruent melting material.
[Solution] Thin plate-shaped single-crystal production equipment includes: an infrared ray irradiation apparatus that irradiates an upper surface of a raw material lump for production of a thin plate-shaped single crystal with an infrared ray to melt the upper surface; and an elevator apparatus that causes a lower surface of a thin plate-shaped seed single crystal to be immersed in a melt melted using the infrared ray irradiation apparatus and formed on the upper surface and then pulls the thin plate-shaped seed single crystal immersed in the melt upward. The thin plate-shaped single-crystal production equipment is configured such that, by using the elevator apparatus to immerse the lower surface of the thin plate-shaped seed single crystal in the melt formed on the upper surface of the raw material lump for the production of the thin plate-shaped single crystal using the infrared ray irradiation apparatus, growth of a single crystal is started from the lower surface of the immersed thin plate-shaped seed single crystal and that, by using the elevator apparatus to pull the thin plate-shaped seed single crystal upward, the thin plate-shaped single crystal is produced continuously.

公开(公告)号：US11846037B2

公开(公告)日：2023-12-19

申请号：US17702158

申请日：2022-03-23

Applicant: TDK CORPORATION

Inventor： Katsumi Kawasaki ,  Jun Arima ,  Minoru Fujita ,  Jun Hirabayashi

IPC: C30B13/18 ,  C30B15/16 ,  C30B15/30 ,  C30B15/20 ,  C30B29/16

CPC classification number: C30B15/16 ,  C30B15/20 ,  C30B15/30 ,  C30B29/16

Abstract: In a crystal manufacturing method, first, a feedstock including a tapered tip portion is disposed above a crystal growth region. Then, a side surface of the tip portion is selectively heated and melted by radiant heat traveling diagonally upward while a shape of the tip portion is maintained, and the side surface of the tip portion is physically connected to an upper surface of the crystal growth region by a material melted from the side surface. In a crystal manufacturing apparatus, the radiant heat for melting the feedstock is radiated from an electric resistance heater.

公开(公告)号：US11739435B2

公开(公告)日：2023-08-29

申请号：US17610871

申请日：2021-02-12

Applicant: Crystal Systems Corporation

Inventor： Isamu Shindo

IPC: C30B13/22 ,  C30B13/00 ,  C30B13/32 ,  C30B15/16 ,  C30B29/12

CPC classification number: C30B13/005 ,  C30B13/22 ,  C30B13/32 ,  C30B15/16 ,  C30B29/12

Abstract: [Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more.
[Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

公开(公告)号：US20210277500A1

公开(公告)日：2021-09-09

申请号：US17126359

申请日：2020-12-18

Applicant: Northwestern Polytechnical University

Inventor： Wenchao YANG ,  Jiarun QIN ,  Pengfei QU ,  Lin LIU ,  Jun ZHANG ,  Haijun SU ,  Taiwen HUANG ,  Min GUO ,  Yueling GUO

IPC: C22C1/03 ,  C22C19/03 ,  C30B15/36 ,  C30B15/10 ,  C30B15/24 ,  C30B15/16

Abstract: In the method for preparing single crystal superalloy test bars by using a Ni—W heterogeneous seed crystal, on the premise of ensuring that the single crystal superalloy has the required orientation, by reusing the seed crystal, it is achieved that the trouble caused by the need of preparing a new seed crystal when a single crystal superalloy is produced by the seed crystal method every time is avoided, and the production cost is significantly reduced. In the present disclosure, the formation of the stray grains in mushy zone could be avoided by using a Ni—W heterogeneous seed crystal without mushy zone and a built-in corundum tube.

公开(公告)号：US20150361578A1

公开(公告)日：2015-12-17

申请号：US14306688

申请日：2014-06-17

Applicant: Energy Materials Research, LLC

Inventor： Carl E. Bleil

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/16

CPC classification number: C30B29/06 ,  C30B15/002 ,  C30B15/14 ,  Y10T117/1008

Abstract: An apparatus for the continuously forming a crystalline ribbon from molten silicon is introduced. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A closeable transfer lock defining a chamber configured to accept a portion of the crystalline ribbon is used to transport a portion of the crystalline ribbon out of apparatus while recycling inert gas used in the system.

Abstract translation: 引入用于从熔融硅连续形成结晶带的装置。 提供加热器，其包括平行于熔融硅表面的一对隔开的平面电极，用于将射频电流电容耦合到材料中，使得材料带沿着区域熔化。 提供与导电和半导电电极之间的相应冷却器和电介质层热接触的导电电极。 限定被配置成接纳一部分结晶带的腔室的可密封的传递锁用于将一部分结晶带输出设备，同时回收系统中使用的惰性气体。