- 专利标题: Method of estimating convection pattern of silicon melt, method of estimating oxygen concentration of silicon single crystal, method of manufacturing silicon single crystal, and raising device of silicon single crystal
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申请号: US16975563申请日: 2019-02-27
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公开(公告)号: US11885038B2公开(公告)日: 2024-01-30
- 发明人: Wataru Sugimura , Ryusuke Yokoyama , Toshiyuki Fujiwara , Toshiaki Ono
- 申请人: SUMCO CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: SUMCO CORPORATION
- 当前专利权人: SUMCO CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: GREENBLUM & BERNSTEIN, P.L.C.
- 优先权: JP 18035830 2018.02.28
- 国际申请: PCT/JP2019/007442 2019.02.27
- 国际公布: WO2019/167987A 2019.09.06
- 进入国家日期: 2020-08-25
- 主分类号: C30B15/26
- IPC分类号: C30B15/26 ; C30B15/16 ; C30B29/06 ; C30B30/04
摘要:
A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.
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