- Patent Title: Method of estimating convection pattern of silicon melt, method of estimating oxygen concentration of silicon single crystal, method of manufacturing silicon single crystal, and raising device of silicon single crystal
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Application No.: US16975563Application Date: 2019-02-27
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Publication No.: US11885038B2Publication Date: 2024-01-30
- Inventor: Wataru Sugimura , Ryusuke Yokoyama , Toshiyuki Fujiwara , Toshiaki Ono
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: GREENBLUM & BERNSTEIN, P.L.C.
- Priority: JP 18035830 2018.02.28
- International Application: PCT/JP2019/007442 2019.02.27
- International Announcement: WO2019/167987A 2019.09.06
- Date entered country: 2020-08-25
- Main IPC: C30B15/26
- IPC: C30B15/26 ; C30B15/16 ; C30B29/06 ; C30B30/04

Abstract:
A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.
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