公开(公告)号：US20190333765A1

公开(公告)日：2019-10-31

申请号：US16395772

申请日：2019-04-26

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Oliver Humbel ,  Ravi Keshav Joshi ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Bernhard Leitl ,  Christian Maier ,  Gerhard Schmidt ,  Juergen Steinbrenner

IPC: H01L21/02 ,  H01L29/66

Abstract: A method for manufacturing a high-voltage semiconductor device includes exposing a semiconductor substrate to a plasma to form a protective substance layer on the semiconductor substrate. A semiconductor device includes a semiconductor substrate and a protective substance layer on the semiconductor substrate.

公开(公告)号：US20190311966A1

公开(公告)日：2019-10-10

申请号：US16379289

申请日：2019-04-09

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Wolfgang Bergner ,  Romain Esteve ,  Richard Gaisberger ,  Florian Grasse ,  Jochen Hilsenbeck ,  Ravi Keshav Joshi ,  Stefan Kramp ,  Stefan Krivec ,  Grzegorz Lupina ,  Hiroshi Narahashi ,  Andreas Voerckel ,  Stefan Woehlert

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/532 ,  H01L29/16 ,  H01L29/861 ,  H01L29/78 ,  H01L21/768 ,  H01L21/56

Abstract: A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.

公开(公告)号：US20170271446A1

公开(公告)日：2017-09-21

申请号：US15457833

申请日：2017-03-13

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav Joshi ,  Johannes Baumgartl ,  Oliver Blank ,  Oliver Hellmund ,  Martin Poelzl

IPC: H01L29/06 ,  H01L29/08 ,  H01L21/78 ,  H01L29/78 ,  B81B7/00 ,  B81C1/00 ,  H01L29/40 ,  H01L29/10 ,  H01L21/683

CPC classification number: H01L29/0696 ,  B81B3/0072 ,  B81B7/008 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0707 ,  G01C19/5733 ,  G01P15/125 ,  H01L21/6835 ,  H01L21/78 ,  H01L29/02 ,  H01L29/0649 ,  H01L29/0834 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7391 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2221/68327

Abstract: First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. Second reinforcement stripes are formed on the first epitaxial layer. A second epitaxial layer covering the second reinforcement stripes is formed on exposed portions of the first epitaxial layer. Semiconducting portions of transistor cells are formed in or portions of micro electromechanical structures are formed from the second epitaxial layer.

公开(公告)号：US20150280288A1

公开(公告)日：2015-10-01

申请号：US14230071

申请日：2014-03-31

Applicant: Infineon Technologies AG

Inventor： Vijaye Kumar Rajaraman ,  Kamil Karlovsky ,  Thomas Neidhart ,  Karl Mayer ,  Rainer Leuschner ,  Christine Moser ,  Ravi Keshav Joshi ,  Alexander Breymesser ,  Bernhard Goller ,  Francisco Javier Santos Rodriguez ,  Peter Zorn

IPC: H01M10/42 ,  H01M2/08 ,  H01M10/04 ,  H01M2/02

CPC classification number: H01M10/4257 ,  H01M2/0202 ,  H01M2/024 ,  H01M2/0404 ,  H01M2/06 ,  H01M2/08 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0436 ,  H01M10/052 ,  Y10T29/4911

Abstract: A lithium ion battery includes a first substrate having a first main surface, and a lid including an insulating material. The lid is attached to the first main surface of the first substrate, and a cavity is defined between the first substrate and the lid. The lithium ion battery further includes an electrical interconnection element in the lid, the electrical interconnection element providing an electrical connection between a first main surface and a second main surface of the lid. The lithium ion battery further includes an electrolyte in the cavity, an anode at the first substrate, the anode including a component made of a semiconductor material, and a cathode at the lid.

Abstract translation: 锂离子电池包括具有第一主表面的第一基板和包括绝缘材料的盖。 盖子附接到第一基板的第一主表面，并且在第一基板和盖子之间限定空腔。 锂离子电池还包括盖中的电互连元件，电互连元件在盖的第一主表面和第二主表面之间提供电连接。 锂离子电池还包括空腔中的电解质，第一衬底处的阳极，阳极包括由半导体材料制成的部件，以及阴极。

公开(公告)号：US11217500B2

公开(公告)日：2022-01-04

申请号：US16379289

申请日：2019-04-09

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Wolfgang Bergner ,  Romain Esteve ,  Richard Gaisberger ,  Florian Grasse ,  Jochen Hilsenbeck ,  Ravi Keshav Joshi ,  Stefan Kramp ,  Stefan Krivec ,  Grzegorz Lupina ,  Hiroshi Narahashi ,  Andreas Voerckel ,  Stefan Woehlert

IPC: H01L23/31 ,  H01L23/29 ,  H01L21/56 ,  H01L29/16 ,  H01L29/861 ,  H01L29/78 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.

公开(公告)号：US20200013723A1

公开(公告)日：2020-01-09

申请号：US16453222

申请日：2019-06-26

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Ravi Keshav Joshi ,  Ralf Siemieniec ,  Thomas Basler ,  Martin Gruber ,  Jochen Hilsenbeck ,  Dethard Peters ,  Roland Rupp ,  Wolfgang Scholz

IPC: H01L23/532 ,  H01L29/16 ,  H01L29/45 ,  H01L21/768 ,  H01L23/00

Abstract: A silicon carbide device includes a silicon carbide substrate, a contact layer including nickel, silicon and aluminum, a barrier layer structure including titanium and tungsten, and a metallization layer including copper. The contact layer is located on the silicon carbide substrate. The contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure. The barrier layer structure is located between the silicon carbide substrate and the metallization layer.

公开(公告)号：US10475743B2

公开(公告)日：2019-11-12

申请号：US15458366

申请日：2017-03-14

Applicant: Infineon Technologies AG

Inventor： Frank Hille ,  Ravi Keshav Joshi ,  Michael Fugger ,  Oliver Humbel ,  Thomas Laska ,  Matthias Mueller ,  Roman Roth ,  Carsten Schaeffer ,  Hans-Joachim Schulze ,  Holger Schulze ,  Juergen Steinbrenner ,  Frank Umbach

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.

公开(公告)号：US20180174840A1

公开(公告)日：2018-06-21

申请号：US15846591

申请日：2017-12-19

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav Joshi ,  Romain Esteve ,  Roland Rupp ,  Francisco Javier Santos Rodriguez ,  Gerald Unegg

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L21/0485 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0878 ,  H01L29/1075 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/45 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/7805 ,  H01L29/7813 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/8611 ,  H01L2924/0002

Abstract: A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. Between neighboring ones of the interface particles, the metal contact structure directly adjoins the silicon carbide semiconductor body.

公开(公告)号：US09917333B2

公开(公告)日：2018-03-13

申请号：US14230071

申请日：2014-03-31

Applicant: Infineon Technologies AG

Inventor： Vijaye Kumar Rajaraman ,  Kamil Karlovsky ,  Thomas Neidhart ,  Karl Mayer ,  Rainer Leuschner ,  Christine Moser ,  Ravi Keshav Joshi ,  Alexander Breymesser ,  Bernhard Goller ,  Francisco Javier Santos Rodriguez ,  Peter Zorn

IPC: H01M14/00 ,  H01M10/42 ,  H01M2/02 ,  H01M2/08 ,  H01M10/04 ,  H01M2/04 ,  H01M2/06 ,  H01M10/052 ,  H01M6/40

CPC classification number: H01M10/4257 ,  H01M2/0202 ,  H01M2/024 ,  H01M2/0404 ,  H01M2/06 ,  H01M2/08 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0436 ,  H01M10/052 ,  Y10T29/4911

Abstract: A lithium ion battery includes a first substrate having a first main surface, and a lid including an insulating material. The lid is attached to the first main surface of the first substrate, and a cavity is defined between the first substrate and the lid. The lithium ion battery further includes an electrical interconnection element in the lid, the electrical interconnection element providing an electrical connection between a first main surface and a second main surface of the lid. The lithium ion battery further includes an electrolyte in the cavity, an anode at the first substrate, the anode including a component made of a semiconductor material, and a cathode at the lid.

公开(公告)号：US20180061660A1

公开(公告)日：2018-03-01

申请号：US15249067

申请日：2016-08-26

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav Joshi ,  Kae-Horng Wang ,  Stefan Willkofer

IPC: H01L21/324 ,  H01L29/739 ,  H01L29/66 ,  H01L21/3213

Abstract: A method of fabricating a semiconductor device includes forming a barrier layer over a surface of a semiconductor substrate. A treated barrier layer is formed by subjecting an exposed surface of the barrier layer to a surface treatment process. The surface treatment process includes treating the surface with a reactive material. A material layer is formed over the treated barrier layer. The material layer comprises a metal.