-
公开(公告)号：US20220037165A1
公开(公告)日：2022-02-03
申请号：US17386699
申请日：2021-07-28
发明人： Hans-Joachim Schulze , Alexander Breymesser , Bernhard Goller , Matthias Kuenle , Helmut Oefner , Francisco Javier Santos Rodriguez , Stephan Voss
IPC分类号： H01L21/324 , H01L21/265 , H01L21/78
摘要： A method of forming a semiconductor device, including forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate, increasing the porosity of the first semiconductor layer, first annealing the first semiconductor layer at a temperature of at least 1050° C., forming a second semiconductor layer on the first semiconductor layer and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.
-
公开(公告)号：US20200013859A1
公开(公告)日：2020-01-09
申请号：US16502451
申请日：2019-07-03
发明人： Carsten SCHAEFFER , Alexander Breymesser , Bernhand Goller , Ronny Kern , Matteo Piccin , Roland Rupp , Francisco Javier Santos Rodriguez
IPC分类号： H01L29/16 , H01L21/04 , H01L21/784 , H01L21/683 , H01L29/66
摘要： According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.
-
公开(公告)号：US10112861B2
公开(公告)日：2018-10-30
申请号：US14813677
申请日：2015-07-30
发明人： Andre Brockmeier , Alexander Breymesser , Carsten Von Koblinski , Francisco Javier Santos Rodriguez , Peter Zorn
摘要： A method of manufacturing a plurality of glass members comprises bringing a first main surface of a glass substrate in contact with a first working surface of a first mold substrate, the first working surface being provided with a plurality of first protruding portions, and bringing a second main surface of the glass substrate in contact with a second working surface of a second mold substrate, the second working surface being provided with a plurality of second protruding portions. The method further comprises controlling a temperature of the glass substrate to a temperature above a glass-transition temperature to form the plurality of glass members, removing the first and the second mold substrates from the glass substrate, and separating adjacent ones of the plurality of glass members.
-
公开(公告)号：US20180090565A1
公开(公告)日：2018-03-29
申请号：US15708209
申请日：2017-09-19
IPC分类号： H01L29/06 , H01L29/10 , H01L21/265 , H01L21/324 , H01L21/225
CPC分类号： H01L29/0638 , H01L21/225 , H01L21/265 , H01L21/324 , H01L29/0611 , H01L29/0619 , H01L29/1095 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/7802 , H01L29/8611
摘要： A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. A maximal doping concentration within the first portion is higher than 1·1015 cm−3. The common doping region includes a second portion. A minimal doping concentration within the second portion is lower than 50% of the maximal doping concentration within the first portion of the common doping region. The common doping region includes a third portion. A minimal doping concentration within the third portion is more than 30% higher than the minimal doping concentration within the second portion. The second portion of the common doping region is located vertically between the first portion of the common doping region and the third portion of the common doping region.
-
5.发明授权公开(公告)号：US09917333B2
公开(公告)日：2018-03-13
申请号：US14230071
申请日：2014-03-31
发明人： Vijaye Kumar Rajaraman , Kamil Karlovsky , Thomas Neidhart , Karl Mayer , Rainer Leuschner , Christine Moser , Ravi Keshav Joshi , Alexander Breymesser , Bernhard Goller , Francisco Javier Santos Rodriguez , Peter Zorn
IPC分类号： H01M14/00 , H01M10/42 , H01M2/02 , H01M2/08 , H01M10/04 , H01M2/04 , H01M2/06 , H01M10/052 , H01M6/40
CPC分类号： H01M10/4257 , H01M2/0202 , H01M2/024 , H01M2/0404 , H01M2/06 , H01M2/08 , H01M6/40 , H01M10/04 , H01M10/0436 , H01M10/052 , Y10T29/4911
摘要： A lithium ion battery includes a first substrate having a first main surface, and a lid including an insulating material. The lid is attached to the first main surface of the first substrate, and a cavity is defined between the first substrate and the lid. The lithium ion battery further includes an electrical interconnection element in the lid, the electrical interconnection element providing an electrical connection between a first main surface and a second main surface of the lid. The lithium ion battery further includes an electrolyte in the cavity, an anode at the first substrate, the anode including a component made of a semiconductor material, and a cathode at the lid.
-
公开(公告)号：US09754787B2
公开(公告)日：2017-09-05
申请号：US14313366
申请日：2014-06-24
发明人： Johannes Laven , Hans-Joachim Schulze , Stephan Voss , Alexander Breymesser , Alexander Susiti , Shuhai Liu , Helmut Oefner
IPC分类号： H01L21/425 , H01L21/263 , H01L21/265 , H01L21/324 , H01L29/36 , H01L29/66 , H01L29/861 , H01L29/872 , H01L29/739 , H01L29/16 , H01L29/22
CPC分类号： H01L21/263 , H01L21/26506 , H01L21/3242 , H01L29/1608 , H01L29/2203 , H01L29/36 , H01L29/66136 , H01L29/66143 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L29/8611 , H01L29/872
摘要： A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.
-
7.发明申请Method of Manufacturing a Plurality of Glass Members, a Method of Manufacturing an Optical Member, and Array of Glass Members in a Glass Substrate 审中-公开制造多个玻璃构件的方法，制造光学构件的方法和玻璃基板中的玻璃构件阵列公开(公告)号：US20170029311A1
公开(公告)日：2017-02-02
申请号：US14813677
申请日：2015-07-30
发明人： Andre Brockmeier , Alexander Breymesser , Carsten Von Koblinski , Francisco Javier Santos Rodriguez , Peter Zorn
IPC分类号： C03B11/08
CPC分类号： C03B11/08 , C03B11/082 , C03B11/084 , C03B2215/06 , C03B2215/07 , C03B2215/414
摘要： A method of manufacturing a plurality of glass members comprises bringing a first main surface of a glass substrate in contact with a first working surface of a first mold substrate, the first working surface being provided with a plurality of first protruding portions, and bringing a second main surface of the glass substrate in contact with a second working surface of a second mold substrate, the second working surface being provided with a plurality of second protruding portions. The method further comprises controlling a temperature of the glass substrate to a temperature above a glass-transition temperature to form the plurality of glass members, removing the first and the second mold substrates from the glass substrate, and separating adjacent ones of the plurality of glass members.
摘要翻译： 一种制造多个玻璃构件的方法包括使玻璃基板的第一主表面与第一模具基板的第一工作表面接触，所述第一工作表面设置有多个第一突出部分，并且使第二主表面 所述玻璃基板的主表面与第二模具基板的第二工作表面接触，所述第二工作表面设置有多个第二突出部分。 该方法还包括将玻璃基板的温度控制在高于玻璃化转变温度的温度以形成多个玻璃部件，从玻璃基板移除第一和第二模具基板，并分离出多个玻璃中的相邻玻璃基板 会员
-
公开(公告)号：US20150371858A1
公开(公告)日：2015-12-24
申请号：US14313366
申请日：2014-06-24
发明人： Johannes Laven , Hans-Joachim Schulze , Stephan Voss , Alexander Breymesser , Alexander Susiti , Shuhai Liu , Helmut Oefner
IPC分类号： H01L21/265 , H01L21/324
CPC分类号： H01L21/263 , H01L21/26506 , H01L21/3242 , H01L29/1608 , H01L29/2203 , H01L29/36 , H01L29/66136 , H01L29/66143 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L29/8611 , H01L29/872
摘要： A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.
摘要翻译： 通过经由第二侧将第一粒子注入到半导体晶片中，在半导体晶片中形成晶体缺陷来处理具有沿第一垂直方向彼此远离布置的相对的第一和第二侧的磁性切克斯第斯基半导体晶片。 晶体缺陷在第一深度具有最大缺陷浓度。 在第一热处理中加热半导体晶片以形成辐射诱导的供体。 选择植入能量和剂量使得半导体晶片在第一热处理之后具有布置在第二侧和第一深度之间的n掺杂半导体区域，并且n掺杂半导体区域在第一垂直方向上具有 第一深度和第二侧之间的净掺杂浓度的局部最大值以及第一深度和第一最大值之间的净掺杂浓度的局部最小值。
-
9.发明申请Implantation Apparatus with Ion Beam Directing Unit, Semiconductor Device and Method of Manufacturing 有权离子束引导单元，半导体器件和制造方法的植入装置公开(公告)号：US20150228446A1
公开(公告)日：2015-08-13
申请号：US14177910
申请日：2014-02-11
IPC分类号： H01J37/147 , H01L29/06 , H01L29/744 , H01J37/317 , H01J37/20
CPC分类号： C23C14/48 , H01J37/1477 , H01J37/20 , H01J37/3171 , H01J2237/20214 , H01J2237/30483 , H01L21/265 , H01L21/68764 , H01L29/0615 , H01L29/0623 , H01L29/0638 , H01L29/0657 , H01L29/36 , H01L29/45 , H01L29/744 , H01L29/861
摘要： An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.
摘要翻译： 离子注入装置包括离子束引导单元，基板支撑件和控制器。 控制器被配置为实现通过离子束引导单元的离子束和衬底支撑件之间的相对运动。 安装在基板支架上的基板上的离子束的光束轨迹包括圆形或螺旋状。
-
公开(公告)号：US11742215B2
公开(公告)日：2023-08-29
申请号：US17386699
申请日：2021-07-28
发明人： Hans-Joachim Schulze , Alexander Breymesser , Bernhard Goller , Matthias Kuenle , Helmut Oefner , Francisco Javier Santos Rodriguez , Stephan Voss
IPC分类号： H01L21/324 , H01L21/78 , H01L21/265
CPC分类号： H01L21/3247 , H01L21/26506 , H01L21/7806
摘要： A method of forming a semiconductor device, including forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate, increasing the porosity of the first semiconductor layer, first annealing the first semiconductor layer at a temperature of at least 1050° C., forming a second semiconductor layer on the first semiconductor layer and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer.
-
-
-
-
-
-
-
-
-
搜索结果
49 条记录 (耗时 0.025 秒)
