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1.发明授权Method of manufacturing a semiconductor device with a continuous silicate glass structure 有权制造具有连续硅酸盐玻璃结构的半导体器件的方法公开(公告)号：US09384960B2
公开(公告)日：2016-07-05
申请号：US14824339
申请日：2015-08-12
IPC分类号： H01L21/336 , H01L21/02 , H01L21/3115 , H01L23/29 , H01L23/31 , H01L29/10 , H01L29/78 , H01L29/49 , H01L29/66 , H01L29/739 , H01L29/06 , H01L29/423 , H01L29/40
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
摘要翻译： 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。
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2.发明申请SEMICONDUCTOR COMPONENT HAVING A DOPANT REGION FORMED BY A DOPANT COMPOSED OF AN OXYGEN / VACANCY COMPLEX 有权具有由氧气/异构体复合物组成的掺杂物形成的掺杂区的半导体元件公开(公告)号：US20150123247A1
公开(公告)日：2015-05-07
申请号：US14480705
申请日：2014-09-09
发明人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
IPC分类号： H01L29/167 , H01L29/78 , H01L29/06 , H01L29/861 , H01L29/739 , H01L29/36
CPC分类号： H01L29/167 , H01L21/265 , H01L21/26506 , H01L29/0603 , H01L29/32 , H01L29/36 , H01L29/7393 , H01L29/7801 , H01L29/861
摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
摘要翻译： 半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。 在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。 掺杂剂区域沿着从第一侧到第二侧的方向具有至少10μm的长度的部分L延伸。 掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。
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3.发明申请SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH A CONTINUOUS SILICATE GLASS STRUCTURE 有权半导体器件和制造具有连续硅酸盐玻璃结构的半导体器件的方法公开(公告)号：US20140291816A1
公开(公告)日：2014-10-02
申请号：US14305359
申请日：2014-06-16
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
摘要翻译： 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。
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公开(公告)号：US09754787B2
公开(公告)日：2017-09-05
申请号：US14313366
申请日：2014-06-24
发明人： Johannes Laven , Hans-Joachim Schulze , Stephan Voss , Alexander Breymesser , Alexander Susiti , Shuhai Liu , Helmut Oefner
IPC分类号： H01L21/425 , H01L21/263 , H01L21/265 , H01L21/324 , H01L29/36 , H01L29/66 , H01L29/861 , H01L29/872 , H01L29/739 , H01L29/16 , H01L29/22
CPC分类号： H01L21/263 , H01L21/26506 , H01L21/3242 , H01L29/1608 , H01L29/2203 , H01L29/36 , H01L29/66136 , H01L29/66143 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L29/8611 , H01L29/872
摘要： A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.
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公开(公告)号：US20150371858A1
公开(公告)日：2015-12-24
申请号：US14313366
申请日：2014-06-24
发明人： Johannes Laven , Hans-Joachim Schulze , Stephan Voss , Alexander Breymesser , Alexander Susiti , Shuhai Liu , Helmut Oefner
IPC分类号： H01L21/265 , H01L21/324
CPC分类号： H01L21/263 , H01L21/26506 , H01L21/3242 , H01L29/1608 , H01L29/2203 , H01L29/36 , H01L29/66136 , H01L29/66143 , H01L29/66712 , H01L29/7395 , H01L29/7802 , H01L29/8611 , H01L29/872
摘要： A Magnetic Czochralski semiconductor wafer having opposing first and second sides arranged distant from one another in a first vertical direction is treated by implanting first particles into the semiconductor wafer via the second side to form crystal defects in the semiconductor wafer. The crystal defects have a maximum defect concentration at a first depth. The semiconductor wafer is heated in a first thermal process to form radiation induced donors. Implantation energy and dose are chosen such that the semiconductor wafer has, after the first thermal process, an n-doped semiconductor region arranged between the second side and first depth, and the n-doped semiconductor region has, in the first vertical direction, a local maximum of a net doping concentration between the first depth and second side and a local minimum of the net doping concentration between the first depth and first maximum.
摘要翻译： 通过经由第二侧将第一粒子注入到半导体晶片中，在半导体晶片中形成晶体缺陷来处理具有沿第一垂直方向彼此远离布置的相对的第一和第二侧的磁性切克斯第斯基半导体晶片。 晶体缺陷在第一深度具有最大缺陷浓度。 在第一热处理中加热半导体晶片以形成辐射诱导的供体。 选择植入能量和剂量使得半导体晶片在第一热处理之后具有布置在第二侧和第一深度之间的n掺杂半导体区域，并且n掺杂半导体区域在第一垂直方向上具有 第一深度和第二侧之间的净掺杂浓度的局部最大值以及第一深度和第一最大值之间的净掺杂浓度的局部最小值。
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6.发明申请Method of Manufacturing a Semiconductor Device with a Continuous Silicate Glass Structure 有权制造具有连续硅酸盐玻璃结构的半导体器件的方法公开(公告)号：US20150348776A1
公开(公告)日：2015-12-03
申请号：US14824339
申请日：2015-08-12
IPC分类号： H01L21/02 , H01L23/29 , H01L23/31 , H01L21/3115
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
摘要翻译： 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。
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7.发明申请Method of Manufacturing a Semiconductor Device with a Polysilicon-Filled Trench 审中-公开使用多晶硅填充沟槽制造半导体器件的方法公开(公告)号：US20160300920A1
公开(公告)日：2016-10-13
申请号：US15187971
申请日：2016-06-21
IPC分类号： H01L29/49 , H01L21/283 , H01L21/265 , H01L29/423 , H01L29/861
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a trench in a semiconductor body at a first surface of the semiconductor body, forming a polysilicon material in the trench, introducing dopants into the polysilicon material by a high dose and low energy process, and performing a thermal treatment configured to drive-in the dopants into the polysilicon material.
摘要翻译： 一种制造半导体器件的方法包括在半导体本体的第一表面处形成半导体本体中的沟槽，在沟槽中形成多晶硅材料，通过高剂量和低能量过程将掺杂剂引入多晶硅材料中，并执行 配置成将掺杂剂驱入多晶硅材料的热处理。
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8.发明授权Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex 有权具有由氧/空位复合体构成的掺杂剂形成的掺杂剂区域的半导体元件公开(公告)号：US09412824B2
公开(公告)日：2016-08-09
申请号：US14480705
申请日：2014-09-09
发明人： Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
IPC分类号： H01L29/861 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/06 , H01L29/739 , H01L29/78 , H01L21/265
CPC分类号： H01L29/167 , H01L21/265 , H01L21/26506 , H01L29/0603 , H01L29/32 , H01L29/36 , H01L29/7393 , H01L29/7801 , H01L29/861
摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
摘要翻译： 半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。 在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。 掺杂剂区域沿着从第一侧到第二侧的方向具有至少10μm的长度的部分L延伸。 掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。
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9.发明授权Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure 有权具有连续的硅酸盐玻璃结构的半导体器件和半导体器件的制造方法公开(公告)号：US09142401B2
公开(公告)日：2015-09-22
申请号：US14305359
申请日：2014-06-16
IPC分类号： H01L27/108 , H01L21/02 , H01L23/29 , H01L23/31 , H01L29/10 , H01L29/78 , H01L29/49 , H01L29/66 , H01L29/739 , H01L21/3115 , H01L29/06 , H01L29/423 , H01L29/40
CPC分类号： H01L29/7813 , H01L21/02123 , H01L21/02129 , H01L21/02321 , H01L21/26506 , H01L21/283 , H01L21/3115 , H01L21/31155 , H01L23/291 , H01L23/3171 , H01L29/06 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4916 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
摘要翻译： 一种制造半导体器件的方法包括在半导体本体的第一表面上形成连续的硅酸盐玻璃结构，该第一表面包括半导体本体的有源区域上的连续玻璃结构的第一部分和连续玻璃结构的第二部分， 半导体主体的有效区域外的区域。 连续玻璃结构的第一部分中包括的掺杂剂的第一组合物不同于连续玻璃结构的第二部分的第二种掺杂剂组合物。
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