公开(公告)号：US20180061660A1

公开(公告)日：2018-03-01

申请号：US15249067

申请日：2016-08-26

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav Joshi ,  Kae-Horng Wang ,  Stefan Willkofer

IPC: H01L21/324 ,  H01L29/739 ,  H01L29/66 ,  H01L21/3213

Abstract: A method of fabricating a semiconductor device includes forming a barrier layer over a surface of a semiconductor substrate. A treated barrier layer is formed by subjecting an exposed surface of the barrier layer to a surface treatment process. The surface treatment process includes treating the surface with a reactive material. A material layer is formed over the treated barrier layer. The material layer comprises a metal.

公开(公告)号：US09891640B2

公开(公告)日：2018-02-13

申请号：US13918842

申请日：2013-06-14

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Andreas Kiep

IPC: H01L27/02 ,  G05F1/46 ,  H01L23/34 ,  H01L29/739 ,  H01L27/06 ,  H02M1/32

CPC classification number: G05F1/463 ,  H01L23/34 ,  H01L27/02 ,  H01L27/0629 ,  H01L29/7397 ,  H01L2924/0002 ,  H02M2001/327 ,  H01L2924/00

Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.

公开(公告)号：US09269654B2

公开(公告)日：2016-02-23

申请号：US14180146

申请日：2014-02-13

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01F5/00 ,  H01F27/28 ,  H01L23/495 ,  H01L23/48 ,  H01L23/522 ,  H01L25/065 ,  H01L49/02 ,  H01L23/64 ,  H01L23/00 ,  H01F17/00

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

公开(公告)号：US20150346245A1

公开(公告)日：2015-12-03

申请号：US14290668

申请日：2014-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Andreas Kiep ,  Stefan Willkofer

IPC: G01R19/165 ,  H02M1/08 ,  H02M3/158

CPC classification number: G01R19/16504 ,  H02M1/08 ,  H02M3/158 ,  H02M2001/0009 ,  H03K17/082 ,  H03K17/14 ,  H03K2217/0027

Abstract: An example relates to a circuit comprising an electronic switching element and an temperature compensating element, which is arranged in the vicinity of the electronic switching element.

Abstract translation: 一个例子涉及一种包括电子开关元件和温度补偿元件的电路，其布置在电子开关元件附近。

公开(公告)号：US20150346037A1

公开(公告)日：2015-12-03

申请号：US14290683

申请日：2014-05-29

Applicant: Infineon Technologies AG

Inventor： Andreas Kiep ,  Stefan Willkofer ,  Andreas Strasser

IPC: G01K7/01 ,  H01L35/34 ,  H01L21/308

CPC classification number: G01K7/01 ,  H01L21/308 ,  H01L35/34

Abstract: An integrated temperature sensor comprising a barrier layer connecting at least two conductive elements, wherein the barrier layer has a positive temperature coefficient.

Abstract translation: 一种集成温度传感器，包括连接至少两个导电元件的阻挡层，其中阻挡层具有正温度系数。

公开(公告)号：US20150364468A1

公开(公告)日：2015-12-17

申请号：US14305596

申请日：2014-06-16

Applicant: Infineon Technologies AG

Inventor： Andreas Kiep ,  Stefan Willkofer ,  Hans-Joachim Schulze

IPC: H01L27/082 ,  H01L27/098 ,  H01L29/78 ,  H01L27/092 ,  H01L29/808 ,  H01L29/739

CPC classification number: H01L29/7395 ,  H01C7/04 ,  H01L27/0629 ,  H01L28/20

Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of −40° C. is greater than at the temperature of 150° C.

Abstract translation: 分立半导体晶体管包括电耦合在分立半导体晶体管的栅电极端子和栅电极之间的栅极电阻。 在-40℃的温度下，栅极电阻器的电阻R大于150℃的温度。

公开(公告)号：US20140368258A1

公开(公告)日：2014-12-18

申请号：US13918842

申请日：2013-06-14

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Andreas Kiep

IPC: G05F1/46 ,  H01L27/02

CPC classification number: G05F1/463 ,  H01L23/34 ,  H01L27/02 ,  H01L27/0629 ,  H01L29/7397 ,  H01L2924/0002 ,  H02M2001/327 ,  H01L2924/00

Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.

Abstract translation: 实施例涉及一种包括高边半导体，低侧半导体，邻近高边半导体布置的第一感测元件的器件。 第一感测元件与高侧半导体隔离，并且第一感测元件可直接连接到处理设备。

公开(公告)号：US09871126B2

公开(公告)日：2018-01-16

申请号：US14305596

申请日：2014-06-16

Applicant: Infineon Technologies AG

Inventor： Andreas Kiep ,  Stefan Willkofer ,  Hans-Joachim Schulze

IPC: H01L27/082 ,  H01L29/739 ,  H01C7/04 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L29/7395 ,  H01C7/04 ,  H01L27/0629 ,  H01L28/20

Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of −40° C. is greater than at the temperature of 150° C.

公开(公告)号：US08932476B2

公开(公告)日：2015-01-13

申请号：US13762117

申请日：2013-02-07

Applicant: Infineon Technologies AG

Inventor： Thomas Kunstmann ,  Stefan Willkofer ,  Anja Gissibl ,  Johann Strasser ,  Matthias Mueller ,  Eva-Maria Hess

IPC: B44C1/22 ,  C23F1/02 ,  C23F1/08

CPC classification number: C23F1/02 ,  C23F1/08 ,  C23F1/18 ,  H01L21/32134 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。

公开(公告)号：US08674800B2

公开(公告)日：2014-03-18

申请号：US13967053

申请日：2013-08-14

Applicant: Infineon Technologies AG

Inventor： Stefan Willkofer ,  Uwe Wahl ,  Bernhard Knott ,  Markus Hammer ,  Andreas Strasser

IPC: H01F5/00 ,  H01F27/28

CPC classification number: H01L23/4952 ,  H01F2017/0086 ,  H01L23/48 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49107 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19104 ,  H01L2924/19107 ,  Y10T29/4902 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract translation: 公开了半导体器件，半导体器件的制造方法和发送信号的方法。 根据本发明的实施例，半导体器件包括第一半导体芯片，其包括第一线圈，第二半导体芯片，包括感应耦合到第一线圈的第二线圈，以及在第一半导体芯片和第二线圈之间的隔离中间层 第二个半导体芯片。