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公开(公告)号：US11352253B2
公开(公告)日：2022-06-07
申请号：US17024029
申请日：2020-09-17
Applicant: Infineon Technologies AG
Inventor： Markus Kahn , Anna-Katharina Kaiser , Soenke Pirk , Juergen Steinbrenner , Julia-Magdalena Straeussnigg
Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
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公开(公告)号：US09984915B2
公开(公告)日：2018-05-29
申请号：US14291107
申请日：2014-05-30
Applicant: Infineon Technologies AG
Inventor： Matthias Kuenle , Gerhard Schmidt , Martin Sporn , Markus Kahn , Juergen Steinbrenner , Ravi Joshi
IPC: H01L21/762 , H01L29/06 , C23C14/06 , C23C14/34 , H01L29/40 , C23C14/58 , C23C14/35 , H01L29/16 , H01L21/02 , H01L29/73
CPC classification number: H01L21/762 , C23C14/0605 , C23C14/345 , C23C14/35 , C23C14/5806 , H01L21/02527 , H01L21/02631 , H01L29/0649 , H01L29/0657 , H01L29/16 , H01L29/408 , H01L29/73
Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.
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公开(公告)号：US09941111B2
公开(公告)日：2018-04-10
申请号：US14724947
申请日：2015-05-29
Applicant: Infineon Technologies AG
Inventor： Gerhard Schmidt , Markus Kahn , Christian Maier , Philipp Koch , Juergen Steinbrenner
CPC classification number: H01L21/02115 , H01L21/02046 , H01L21/02164 , H01L21/02301 , H01L21/02315 , H01L21/28194 , H01L21/3065 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/1602 , H01L29/1604 , H01L29/51 , H01L29/66181 , H01L29/7395
Abstract: According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.
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公开(公告)号：US09917170B2
公开(公告)日：2018-03-13
申请号：US15136121
申请日：2016-04-22
Applicant: Infineon Technologies AG
Inventor： Ravi Joshi , Romain Esteve , Markus Kahn , Gerald Unegg
IPC: H01L21/28 , H01L21/44 , H01L29/45 , H01L29/16 , H01L21/04 , H01L21/265 , H01L21/324
CPC classification number: H01L29/45 , H01L21/046 , H01L21/0485 , H01L21/26506 , H01L21/324 , H01L29/1608
Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.
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公开(公告)号：US20170309720A1
公开(公告)日：2017-10-26
申请号：US15136121
申请日：2016-04-22
Applicant: Infineon Technologies AG
Inventor： Ravi Joshi , Romain Esteve , Markus Kahn , Gerald Unegg
IPC: H01L29/45 , H01L21/324 , H01L21/265 , H01L29/16 , H01L21/04
CPC classification number: H01L29/45 , H01L21/046 , H01L21/0485 , H01L21/26506 , H01L21/324 , H01L29/1608
Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.
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Patent Agency Ranking
6.发明授权Methods of singulating substrates to form semiconductor devices using dummy material 有权使用虚拟材料分离衬底以形成半导体器件的方法公开(公告)号：US09257342B2
公开(公告)日：2016-02-09
申请号：US14260903
申请日：2014-04-24
Applicant: Infineon Technologies AG
Inventor： Gudrun Stranzl , Martin Zgaga , Markus Kahn , Guenter Denifl
IPC: H01L21/82 , H01L21/78 , H01L21/8258 , H01L21/308
CPC classification number: H01L21/78 , H01L21/02115 , H01L21/0212 , H01L21/308 , H01L21/76224 , H01L21/82 , H01L21/8258
Abstract: In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.
Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底中形成开口。 该方法包括在开口内形成虚拟填充材料并使衬底变薄以暴露虚拟填充材料。 去除虚拟填充材料。
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公开(公告)号：US20140117511A1
公开(公告)日：2014-05-01
申请号：US13664311
申请日：2012-10-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Kurt Matoy , Hubert Maier , Christian Krenn , Elfriede Kraxner Wellenzohn , Helmut Schoenherr , Juergen Steinbrenner , Markus Kahn , Fister Schlemitz Silvana , Christoph Brunner , Herbert Gietler , Uwe Hoeckele
CPC classification number: H01L23/3171 , H01L21/0206 , H01L21/0214 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02334 , H01L21/0234 , H01L21/76801 , H01L23/291
Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.
Abstract translation: 公开了钝化层和制备钝化层的方法。 在一个实施例中，制造钝化层的方法包括在工件上沉积第一硅基电介质层，第一硅基电介质层包含氮，并在第一硅基电介质层上原位沉积第二硅基电介质层， 所述第二电介质层包含氧。
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公开(公告)号：US20210002132A1
公开(公告)日：2021-01-07
申请号：US17024029
申请日：2020-09-17
Applicant: Infineon Technologies AG
Inventor： Markus Kahn , Anna-Katharina Kaiser , Soenke Pirk , Juergen Steinbrenner , Julia-Magdalena Straeussnigg
Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
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公开(公告)号：US10081533B2
公开(公告)日：2018-09-25
申请号：US14448767
申请日：2014-07-31
Applicant: Infineon Technologies AG
Inventor： Ulrich Schmid , Tobias Frischmuth , Peter Irsigler , Thomas Grille , Daniel Maurer , Ursula Hedenig , Markus Kahn , Günter Denifl
IPC: B81B3/00 , B06B1/02 , B81C1/00 , H04R19/02 , H04R19/04 , H04R31/00 , H04R7/24 , H04R7/02 , H04R19/00
CPC classification number: B81B3/0021 , B06B1/02 , B81B3/007 , B81B2201/0257 , B81B2201/0264 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/051 , B81C1/00142 , B81C1/0015 , B81C1/00158 , B81C1/00373 , B81C2201/0176 , B81C2201/0181 , B81C2201/019 , H04R7/02 , H04R7/24 , H04R19/005 , H04R19/02 , H04R19/04 , H04R31/00 , H04R31/003 , H04R2201/003 , H04R2307/023 , H04R2400/01 , H04R2499/11
Abstract: A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.
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公开(公告)号：US20160353210A1
公开(公告)日：2016-12-01
申请号：US14724224
申请日：2015-05-28
Applicant: Infineon Technologies AG
Inventor： Ulrich Schmid , Tobias Frischmuth , Peter Irsigler , Thomas Grille , Daniel Maurer , Ursula Hedenig , Markus Kahn , Guenter Denifl , Michael Schneider
CPC classification number: B81C1/00158 , B81B3/007 , B81B3/0072 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81C2201/0167 , B81C2201/0177 , B81C2201/0181 , H04R2201/003
Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.
Abstract translation: 微机械结构包括衬底和布置在衬底上的功能结构。 功能结构包括响应于作用在功能区域上的力而相对于衬底可偏转的功能区域。 功能结构包括碳层布置，其中碳层布置的基础材料是碳材料。
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