- Patent Title: Semiconductor wafer and method for processing a semiconductor wafer
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Application No.: US14291107Application Date: 2014-05-30
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Publication No.: US09984915B2Publication Date: 2018-05-29
- Inventor: Matthias Kuenle , Gerhard Schmidt , Martin Sporn , Markus Kahn , Juergen Steinbrenner , Ravi Joshi
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner MBB
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; C23C14/06 ; C23C14/34 ; H01L29/40 ; C23C14/58 ; C23C14/35 ; H01L29/16 ; H01L21/02 ; H01L29/73

Abstract:
According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.
Public/Granted literature
- US20150348824A1 SEMICONDUCTOR WAFER AND METHOD FOR PROCESSING A SEMICONDUCTOR WAFER Public/Granted day:2015-12-03
Information query
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