公开(公告)号：US20180012836A1

公开(公告)日：2018-01-11

申请号：US15693511

申请日：2017-09-01

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Juergen Steinbrenner

IPC: H01L23/528 ,  H01L21/311 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/528 ,  H01L21/02115 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/02645 ,  H01L21/28568 ,  H01L21/31138 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.

公开(公告)号：US09704800B2

公开(公告)日：2017-07-11

申请号：US14836978

申请日：2015-08-27

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Juergen Steinbrenner

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285 ,  H01L21/311

CPC classification number: H01L23/528 ,  H01L21/02115 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/02645 ,  H01L21/28568 ,  H01L21/31138 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.

公开(公告)号：US20150371942A1

公开(公告)日：2015-12-24

申请号：US14836978

申请日：2015-08-27

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Juergen Steinbrenner

IPC: H01L23/528 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/02115 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/02645 ,  H01L21/28568 ,  H01L21/31138 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.

公开(公告)号：US10910309B2

公开(公告)日：2021-02-02

申请号：US15693511

申请日：2017-09-01

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Juergen Steinbrenner

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311

Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.

公开(公告)号：US09984915B2

公开(公告)日：2018-05-29

申请号：US14291107

申请日：2014-05-30

Applicant: Infineon Technologies AG

Inventor： Matthias Kuenle ,  Gerhard Schmidt ,  Martin Sporn ,  Markus Kahn ,  Juergen Steinbrenner ,  Ravi Joshi

IPC: H01L21/762 ,  H01L29/06 ,  C23C14/06 ,  C23C14/34 ,  H01L29/40 ,  C23C14/58 ,  C23C14/35 ,  H01L29/16 ,  H01L21/02 ,  H01L29/73

CPC classification number: H01L21/762 ,  C23C14/0605 ,  C23C14/345 ,  C23C14/35 ,  C23C14/5806 ,  H01L21/02527 ,  H01L21/02631 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/16 ,  H01L29/408 ,  H01L29/73

Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.

公开(公告)号：US09917170B2

公开(公告)日：2018-03-13

申请号：US15136121

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Romain Esteve ,  Markus Kahn ,  Gerald Unegg

IPC: H01L21/28 ,  H01L21/44 ,  H01L29/45 ,  H01L29/16 ,  H01L21/04 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/45 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/26506 ,  H01L21/324 ,  H01L29/1608

Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.

公开(公告)号：US09899325B2

公开(公告)日：2018-02-20

申请号：US14453629

申请日：2014-08-07

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi

IPC: C23C18/00 ,  H01L23/532 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L23/53238 ,  C23C18/00 ,  C23C18/08 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53223 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. The forming of the barrier layer includes depositing a solution comprising a metal complex over the substrate and at least partially decomposing of the ligand of the metal complex.

公开(公告)号：US20170309720A1

公开(公告)日：2017-10-26

申请号：US15136121

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Romain Esteve ,  Markus Kahn ,  Gerald Unegg

IPC: H01L29/45 ,  H01L21/324 ,  H01L21/265 ,  H01L29/16 ,  H01L21/04

CPC classification number: H01L29/45 ,  H01L21/046 ,  H01L21/0485 ,  H01L21/26506 ,  H01L21/324 ,  H01L29/1608

Abstract: A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. A conductor is formed on the carbon-based contact region such that the carbon-based contact region is interposed between the conductor and the highly doped silicon-carbide contact region. A thermal budget for forming the carbon-based contact region is maintained below a level that induces metal silicidization of the highly doped silicon-carbide contact region.

公开(公告)号：US20160043034A1

公开(公告)日：2016-02-11

申请号：US14453629

申请日：2014-08-07

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C18/00 ,  C23C18/08 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53223 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. The forming of the barrier layer includes depositing a solution comprising a metal complex over the substrate and at least partially decomposing of the ligand of the metal complex.

Abstract translation: 在各种实施例中，提供了一种形成装置的方法。 该方法包括在衬底上形成金属层并形成至少一个势垒层。 阻挡层的形成包括在衬底上沉积包含金属络合物的溶液并且至少部分地分解金属络合物的配体。

公开(公告)号：US20150311157A1

公开(公告)日：2015-10-29

申请号：US14738967

申请日：2015-06-15

Applicant: Infineon Technologies AG

Inventor： Ravi Joshi ,  Juergen Steinbrenner

IPC: H01L23/532 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/02115 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/02645 ,  H01L21/28568 ,  H01L21/31138 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.

Abstract translation: 在各种实施例中，提供了一种用于在衬底上制造金属化层的方法，其中所述方法可以包括在衬底上形成多组纳米管，其中所述纳米管组可以被布置成使得衬底的一部分被暴露， 在多组纳米管之间的衬底的暴露部分上形成金属。