公开(公告)号：US20050082659A1

公开(公告)日：2005-04-21

申请号：US10954181

申请日：2004-10-01

Applicant: Hiroshi Horibe

Inventor： Hiroshi Horibe

IPC: H01L23/28 ,  H01L21/60 ,  H01L23/485 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H01L27/10 ,  H01L29/40

CPC classification number: H01L23/50 ,  H01L23/4952 ,  H01L23/49838 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4516 ,  H01L2224/4554 ,  H01L2224/45644 ,  H01L2224/48095 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/85399 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01049

Abstract: In order to provide a downsized semiconductor device increased in function level with output terminals arranged along at least three sides of a semiconductor chip, the semiconductor device includes a semiconductor chip having a row of aggregated pads arranged on a main surface, and a row of output terminals arranged along at least three sides at a perimeter of the semiconductor chip, wire-bonded with the row of aggregated pads.

Abstract translation: 为了提供在半导体芯片的至少三侧布置的输出端子的功能水平增加的小型化半导体器件，半导体器件包括半导体芯片，其具有排列在主表面上的一排聚集焊盘和一排输出 端子沿半导体芯片的周边至少三边布置，与一排聚集的焊盘导线接合。

公开(公告)号：US6112969A

公开(公告)日：2000-09-05

申请号：US124835

申请日：1998-07-30

Applicant: Hiroshi Horibe ,  Kazuko Nakamura ,  Shinji Toyosaki

Inventor： Hiroshi Horibe ,  Kazuko Nakamura ,  Shinji Toyosaki

IPC: H01L21/60 ,  B23K1/06 ,  B23K37/00 ,  H01L21/607

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48505 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48869 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85099 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20303 ,  H01L2924/20753 ,  Y10S228/904

Abstract: A wire bonding method for joining a metal wire with a bonding pad disposed on a semiconductor element by using a load and supersonic wave vibration, comprising: during interval of time from contact of the metal wire with the bonding pad to application of the supersonic wave vibration, continuously applying a first bonding load and a second bonding load which is lower than the first bonding load; and after application of the supersonic wave vibration, continuously applying a third bonding load of a size of about 50% of the load of the second bonding load and a fourth bonding load which is lower than the first bonding load and higher than the third bonding load. The reliability of the fine wire bonding joint is improved remarkably, whereby a high quality semiconductor device cna be produced at a low cost.

Abstract translation: 一种用于通过使用负载和超声波振动将金属线与设置在半导体元件上的接合焊盘接合的引线接合方法，包括：在金属线与接合垫接触的时间间隔期间施加超声波振动 连续施加低于所述第一接合负载的第一接合负载和第二接合负载; 并且在施加超声波振动之后，连续施加尺寸为第二接合负载的负载的约50％的第三接合负载和低于第一接合负载的第四接合负载，并且高于第三接合负载 。 细线接合接头的可靠性显着提高，能够以低成本制造高质量的半导体器件。

公开(公告)号：US09230937B2

公开(公告)日：2016-01-05

申请号：US13468139

申请日：2012-05-10

Applicant: Kaori Sumitomo ,  Hideyuki Arakawa ,  Hiroshi Horibe ,  Yasuki Takata

Inventor： Kaori Sumitomo ,  Hideyuki Arakawa ,  Hiroshi Horibe ,  Yasuki Takata

IPC: H01L21/44 ,  H01L23/00

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05186 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/1134 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78304 ,  H01L2224/78343 ,  H01L2224/81193 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/20755 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/207

Abstract: There is provided a technology capable of suppressing the damage applied to a pad. When the divergence angle of an inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is very small in magnitude. In other words, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is sufficiently smaller in magnitude than the ultrasonic conversion load in a direction in parallel with the surface of the pad. Consequently, when the divergence angle of the inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad can be sufficiently reduced in magnitude, which can prevent pad peeling.

Abstract translation: 提供了能够抑制施加到垫的损伤的技术。 当内倒角部分的发散角小于90度时，垂直于焊盘表面的方向的超声波转换载荷的大小非常小。 换句话说，垂直于焊盘表面的方向上的超声波转换负载在与焊盘表面平行的方向上的超声波转换载荷的幅度上足够小。 因此，当内倒角部分的发散角小于90度时，可以在与焊盘表面垂直的方向上的超声波转换载荷大大降低，从而可以防止焊盘剥离。

公开(公告)号：US08415245B2

公开(公告)日：2013-04-09

申请号：US12878228

申请日：2010-09-09

Applicant: Yasuki Takata ,  Kaori Sumitomo ,  Hiroshi Horibe ,  Hideyuki Arakawa

Inventor： Yasuki Takata ,  Kaori Sumitomo ,  Hiroshi Horibe ,  Hideyuki Arakawa

IPC: H01L21/44

CPC classification number: H01L23/4952 ,  B23K20/007 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78302 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/92247

Abstract: Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (α portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.

Abstract translation: 毛线管的高度控制在线接合中的线圈接合（第二接合）中进行，从而可以控制线圈部分的厚度，从而确保线圈部分的接合强度并且提高接合可靠性。 此外，线圈部分具有厚的部分，并且线材和内部引线的接合区域的一部分（α部分）形成在厚部分的下部，从而充分地确保了线圈部分的厚度和 接合区域。

公开(公告)号：US20050029679A1

公开(公告)日：2005-02-10

申请号：US10932052

申请日：2004-09-02

Applicant: Hiroshi Horibe

Inventor： Hiroshi Horibe

IPC: H01L23/28 ,  H01L21/60 ,  H01L23/495

CPC classification number: H01L24/05 ,  H01L23/4952 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/4809 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/85148 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/14 ,  H01L2224/78 ,  H01L2224/45099 ,  H01L2924/00

Abstract: A semiconductor device comprises a chip; a plurality of bonding pads provided on the chip; and a plurality of inner leads arranged opposite to the bonding pads. Further the semiconductor device comprises a plurality of bonding wires electrically connecting the bonding pads and the corresponding inner leads, respectively. Each of the bonding wires has a plurality of bends electrically isolated from conductive parts on the chip, and the bonding pads are arranged at optional positions on a surface of the chip. Hence the shorting of the chip by the bonding wires can be reliably prevented, the bonding wire having a high mechanical strength can be stably fed, the bonding pads may be optionally arranged on the chip, the degree of freedom of designing the layout of the internal circuit of the chip is high, and the semiconductor device and the wire bonding apparatus can be developed at a high efficiency.

Abstract translation: 半导体器件包括芯片; 设置在所述芯片上的多个接合焊盘; 以及与接合焊盘相对设置的多个内部引线。 此外，半导体器件包括分别将接合焊盘和相应的内部引线电连接的多个接合线。 每个接合线具有与芯片上的导电部分电隔离的多个弯曲部，并且接合焊盘被布置在芯片的表面上的任选位置。 因此，可以可靠地防止芯片的短路，能够稳定地供给机械强度高的接合线，焊盘可以任意设置在芯片上，设计内部的布局的自由度 芯片的电路高，可以高效率地开发半导体装置和引线键合装置。

公开(公告)号：US06600218B2

公开(公告)日：2003-07-29

申请号：US10153620

申请日：2002-05-24

Applicant: Fumiaki Aga ,  Namiki Moriga ,  Hiroshi Horibe ,  Yasuhito Suzuki ,  Akira Takaki

Inventor： Fumiaki Aga ,  Namiki Moriga ,  Hiroshi Horibe ,  Yasuhito Suzuki ,  Akira Takaki

IPC: H01L2302

CPC classification number: H01L24/48 ,  H01L23/4952 ,  H01L23/50 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85148 ,  H01L2224/85399 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01079 ,  H01L2924/01204 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2224/78 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/43

Abstract: A semiconductor device comprises a semiconductor chip. The semiconductor chip has an internal active region, an external active region, and a plurality of electrodes for electrically connecting the internal active region and the external active region to outside thereof, respectively. The semiconductor device also comprises a boarding portion that carries the semiconductor chip, a plurality of external electrode terminals for electrical connection to an external device, a plurality of connecting wires each connecting the electrode of the semiconductor chip and the external electrode terminal; and a mold resin that seals the semiconductor chip, the boarding portion and the connecting wires. The electrodes are disposed around the internal active region, and the external active region is disposed outside the electrodes.

Abstract translation: 半导体器件包括半导体芯片。 半导体芯片具有内部有源区域，外部有源区域和用于分别将内部有源区域和外部有源区域电连接到其外部的多个电极。 半导体器件还包括承载半导体芯片的登记部分，用于与外部装置电连接的多个外部电极端子，连接半导体芯片的电极和外部电极端子的多个连接线; 以及密封半导体芯片，登机部和连接线的模制树脂。 电极设置在内部有源区域周围，并且外部有源区域设置在电极外部。

公开(公告)号：US06518652B2

公开(公告)日：2003-02-11

申请号：US09808151

申请日：2001-03-15

Applicant: Yasuki Takata ,  Hiroshi Horibe ,  Kazunari Michii

Inventor： Yasuki Takata ,  Hiroshi Horibe ,  Kazunari Michii

IPC: H01L23495

CPC classification number: H01L23/4951 ,  H01L23/49503 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/06136 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85447 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor package includes a semiconductor chip, a die pad, an adhesive, metal wires, LOC inner leads, and standard inner leads sealed within a sealing resin. The LOC inner leads and the standard inner leads are arranged in the same plane and both are arranged along one side of the semiconductor chip. Clearance between the inner leads and the die pad larger than the total thickness of the semiconductor chip and the bonding material. Thus, a semiconductor chip having electrode pads broadly distributed can be employed and the section modulus of the semiconductor package can be increased.

Abstract translation: 半导体封装包括半导体芯片，芯片焊盘，粘合剂，金属线，LOC内引线和密封在密封树脂内的标准内引线。 LOC内引线和标准内引线布置在同一平面中，并且都沿着半导体芯片的一侧布置。 内引线和芯片焊盘之间的间隙大于半导体芯片和接合材料的总厚度。 因此，可以采用具有广泛分布的电极焊盘的半导体芯片，并且可以增加半导体封装的截面模数。

公开(公告)号：US5838071A

公开(公告)日：1998-11-17

申请号：US835802

申请日：1997-04-16

Applicant: Hiroshi Horibe ,  Kazuko Nakamura ,  Shinji Toyosaki

Inventor： Hiroshi Horibe ,  Kazuko Nakamura ,  Shinji Toyosaki

IPC: H01L21/60 ,  B23K1/06 ,  B23K37/00 ,  H01L21/607 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48505 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48869 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85099 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20303 ,  H01L2924/20753 ,  Y10S228/904

Abstract: A wire bonding method for joining a metal wire with a bonding pad disposed on a semiconductor element by using a load and supersonic wave vibration, comprising: during interval of time from contact of the metal wire with the bonding pad to application of the supersonic wave vibration, continuously applying a first bonding load and a second bonding load which is lower than the first bonding load; and after application of the supersonic wave vibration, continuously applying a third bonding load of a size of about 50% of the load of the second bonding load and a fourth bonding load which is lower than the first bonding load and higher than the third bonding load. The reliability of the fine wire bonding joint is improved remarkably, whereby a high quality semiconductor device cna be produced at a low cost.

Abstract translation: 一种用于通过使用负载和超声波振动将金属线与设置在半导体元件上的接合焊盘接合的引线接合方法，包括：在金属线与接合垫接触的时间间隔期间施加超声波振动 连续施加低于所述第一接合负载的第一接合负载和第二接合负载; 并且在施加超声波振动之后，连续施加尺寸为第二接合负载的负载的约50％的第三接合负载和低于第一接合负载的第四接合负载，并且高于第三接合负载 。 细线接合接头的可靠性显着提高，能够以低成本制造高质量的半导体器件。

公开(公告)号：US20120286427A1

公开(公告)日：2012-11-15

申请号：US13468139

申请日：2012-05-10

Applicant: Kaori Sumitomo ,  Hideyuki Arakawa ,  Hiroshi Horibe ,  Yasuki Takata

Inventor： Kaori Sumitomo ,  Hideyuki Arakawa ,  Hiroshi Horibe ,  Yasuki Takata

IPC: H01L23/48 ,  H01L21/60

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0508 ,  H01L2224/05186 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/1134 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78304 ,  H01L2224/78343 ,  H01L2224/81193 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/20755 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/207

Abstract: There is provided a technology capable of suppressing the damage applied to a pad. When the divergence angle of an inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is very small in magnitude. In other words, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is sufficiently smaller in magnitude than the ultrasonic conversion load in a direction in parallel with the surface of the pad. Consequently, when the divergence angle of the inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad can be sufficiently reduced in magnitude, which can prevent pad peeling.

Abstract translation: 提供了能够抑制施加到垫的损伤的技术。 当内倒角部分的发散角小于90度时，垂直于焊盘表面的方向的超声波转换载荷的大小非常小。 换句话说，垂直于焊盘表面的方向上的超声波转换负载在与焊盘表面平行的方向上的超声波转换载荷的幅度上足够小。 因此，当内倒角部分的发散角小于90度时，可以在与焊盘表面垂直的方向上的超声波转换载荷大大降低，从而可以防止焊盘剥离。

公开(公告)号：US20110057299A1

公开(公告)日：2011-03-10

申请号：US12878228

申请日：2010-09-09

Applicant: Yasuki TAKATA ,  Kaori Sumitomo ,  Hiroshi Horibe ,  Hideyuki Arakawa

Inventor： Yasuki TAKATA ,  Kaori Sumitomo ,  Hiroshi Horibe ,  Hideyuki Arakawa

IPC: H01L23/495 ,  B23K20/10 ,  B23K31/02

CPC classification number: H01L23/4952 ,  B23K20/007 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/78268 ,  H01L2224/78302 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/92247

Abstract: Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (α portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.

Abstract translation: 毛线管的高度控制在线接合中的线圈接合（第二接合）中进行，从而可以控制线圈部分的厚度，从而确保线圈部分的接合强度并且提高接合可靠性。 此外，线圈部分具有厚的部分，并且线材和内部引线的接合区域的一部分（α部分）形成在厚部分的下部，从而充分地确保了线圈部分的厚度和 接合区域。