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    Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
    1.
    发明申请
    Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance 有权
    银和银合金金属镀层，提高了附着力和电迁移率

    公开(公告)号：US20060199360A1

    公开(公告)日：2006-09-07

    申请号：US11208251

    申请日：2005-08-18

    申请人： Terry Alford ,  Ekta Misra

    发明人： Terry Alford ,  Ekta Misra

    IPC分类号： H01L21/44 ,  H01L23/48

    CPC分类号： H01L23/53252 ,  H01L21/32051 ,  H01L21/76841 ,  H01L23/53247 ,  H01L27/3276 ,  H01L27/3288 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.

    摘要翻译： 在半导体集成电路和器件制造互连中，通过沉积在Si表面上的SiO2层上的包层Ag来实现金属化。 包层Ag具有与SiO 2接触的Ag和Al（5原子％）的合金层，基本上纯的Ag的层和Ag和Al合金的外层。 该合金提高了与SiO2的粘附性，避免了Ag的聚集，减少或消除了SiO 2表面的扩散，减少了电迁移并呈现了被动的外表面。

    Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
    3.
    发明授权
    Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance 有权
    银和银合金金属镀层，提高了附着力和电迁移率

    公开(公告)号：US07446037B2

    公开(公告)日：2008-11-04

    申请号：US11208251

    申请日：2005-08-18

    申请人： Terry L. Alford ,  Ekta Misra

    发明人： Terry L. Alford ,  Ekta Misra

    IPC分类号： H01L21/00

    CPC分类号： H01L23/53252 ,  H01L21/32051 ,  H01L21/76841 ,  H01L23/53247 ,  H01L27/3276 ,  H01L27/3288 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.

    摘要翻译： 在半导体集成电路和器件制造互连中，通过沉积在Si表面上的SiO2层上的包层Ag来实现金属化。 包层Ag具有与SiO 2接触的Ag和Al（5原子％）的合金层，基本上纯的Ag的层和Ag和Al合金的外层。 该合金提高了与SiO2的粘附性，避免了Ag的聚集，减少或消除了SiO 2表面的扩散，减少了电迁移并呈现了被动的外表面。

    PASSIVATION LAYER EXTENSION TO CHIP EDGE
    4.
    发明申请
    PASSIVATION LAYER EXTENSION TO CHIP EDGE 有权
    钝化层延伸到芯片边缘

    公开(公告)号：US20110298095A1

    公开(公告)日：2011-12-08

    申请号：US12796068

    申请日：2010-06-08

    申请人： Timothy H. Daubenspeck ,  Ekta Misra ,  Marie-Claude Paquet ,  Francis Santerre ,  Wolfgang Sauter

    发明人： Timothy H. Daubenspeck ,  Ekta Misra ,  Marie-Claude Paquet ,  Francis Santerre ,  Wolfgang Sauter

    IPC分类号： H01L21/78 ,  H01L23/00

    CPC分类号： H01L21/78 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the invention provide a semiconductor chip having a passivation layer extending along a surface of a semiconductor substrate to an edge of the semiconductor substrate, and methods for their formation. One aspect of the invention provides a semiconductor chip comprising: a semiconductor substrate; a passivation layer including a photosensitive polyimide disposed along a surface of the semiconductor substrate and extending to at least one edge of the semiconductor substrate; and a channel extending through the passivation layer to the surface of the semiconductor substrate.

    摘要翻译： 本发明的实施例提供了具有沿着半导体衬底的表面延伸到半导体衬底的边缘的钝化层的半导体芯片及其形成方法。 本发明的一个方面提供一种半导体芯片，包括：半导体衬底; 钝化层，包括沿半导体衬底的表面设置并延伸到半导体衬底的至少一个边缘的光敏聚酰亚胺; 以及延伸穿过钝化层到半导体衬底的表面的沟道。