发明授权
- 专利标题： Offset solder vias, methods of manufacturing and design structures
- 专利标题（中）： 偏移焊路通孔，制造方法和设计结构
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申请号： US12960110申请日： 2010-12-03
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公开(公告)号： US08298929B2公开(公告)日： 2012-10-30
- 发明人: Timothy H. Daubenspeck , Gary Lafontant , Ekta Misra , David L. Questad , George J. Scott , Krystyna W. Semkow , Timothy D. Sullivan , Thomas A. Wassick , Steven L. Wright
- 申请人： Timothy H. Daubenspeck , Gary Lafontant , Ekta Misra , David L. Questad , George J. Scott , Krystyna W. Semkow , Timothy D. Sullivan , Thomas A. Wassick , Steven L. Wright
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 David Cain
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/4763
摘要：
Semiconductor structures, methods of manufacture and design structures are provided. The structure includes at least one offset crescent shaped solder via formed in contact with an underlying metal pad of a chip. The at least one offset crescent shaped via is offset with respect to at least one of the underlying metal pad and an underlying metal layer in direct electrical contact with an interconnect of the chip which is in electrical contact with the underlying metal layer.
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