公开(公告)号：US09184228B2

公开(公告)日：2015-11-10

申请号：US13107241

申请日：2011-05-13

Applicant: Yuki Seki ,  Issei Satoh ,  Koji Uematsu ,  Yoshiyuki Yamamoto

Inventor： Yuki Seki ,  Issei Satoh ,  Koji Uematsu ,  Yoshiyuki Yamamoto

IPC: H01L29/04 ,  H01L29/02 ,  H01L21/762 ,  H01L27/12

CPC classification number: H01L29/02 ,  B32B2264/102 ,  B32B2307/704 ,  B32B2457/14 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  Y10T428/24355

Abstract: A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5×10−6K−1. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.

Abstract translation: 本发明的复合基材包括烧结基体和设置在烧结基体上的基面平坦化层，基面平坦化层的表面RMS粗糙度不大于1.0nm。 本发明的复合基板包括复合基材和设置在复合基材的位于基面平坦化层的一侧的半导体晶体层，烧结基体的热膨胀系数与热膨胀系数之差 的半导体晶体层不超过4.5×10-6K-1。 由此，提供将半导体结晶层附着在烧结基体上的复合基板和适合用于该复合基板的复合基材。

公开(公告)号：US09184180B2

公开(公告)日：2015-11-10

申请号：US14162465

申请日：2014-01-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo Huh ,  Sung-Chul Kim ,  Suk-Won Jung

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L29/78684

Abstract: A method of manufacturing a flexible display apparatus includes: preparing a support substrate; forming a first graphene oxide layer having a first electrical charge on the support substrate; forming a second graphene oxide layer having a second electrical charge on the first graphene oxide layer; forming a flexible substrate on the second graphene oxide layer; forming a display unit on the flexible substrate; and separating the support substrate and the flexible substrate from each other.

Abstract translation: 柔性显示装置的制造方法包括：准备支撑基板; 在所述支撑基板上形成具有第一电荷的第一石墨烯氧化物层; 在所述第一石墨烯氧化物层上形成具有第二电荷的第二石墨烯氧化物层; 在第二石墨烯氧化物层上形成柔性基板; 在柔性基板上形成显示单元; 并将支撑基板和柔性基板彼此分离。

公开(公告)号：US20150293404A1

公开(公告)日：2015-10-15

申请号：US14749962

申请日：2015-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

IPC: G02F1/1335 ,  G02F1/1333

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

Abstract translation: 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US09161448B2

公开(公告)日：2015-10-13

申请号：US13352876

申请日：2012-01-18

Applicant: Etienne Menard ,  Matthew Meitl ,  John A. Rogers

Inventor： Etienne Menard ,  Matthew Meitl ,  John A. Rogers

IPC: H01L21/00 ,  H05K1/18 ,  H01L21/683 ,  H01L21/768 ,  H01L23/48 ,  H01L27/12 ,  H01L27/146 ,  H01L31/0203 ,  H01L31/048 ,  H05K13/04 ,  H01L23/544 ,  H01L23/00 ,  H01S5/022

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/7806 ,  H01L23/481 ,  H01L23/544 ,  H01L24/02 ,  H01L24/05 ,  H01L24/08 ,  H01L24/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/799 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L24/98 ,  H01L27/1214 ,  H01L27/14618 ,  H01L31/0203 ,  H01L31/043 ,  H01L31/048 ,  H01L31/1892 ,  H01L2221/68318 ,  H01L2221/68322 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/04026 ,  H01L2224/05548 ,  H01L2224/056 ,  H01L2224/08238 ,  H01L2224/24011 ,  H01L2224/24137 ,  H01L2224/24147 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/24998 ,  H01L2224/2731 ,  H01L2224/29078 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29344 ,  H01L2224/3012 ,  H01L2224/32104 ,  H01L2224/32146 ,  H01L2224/32227 ,  H01L2224/73267 ,  H01L2224/75263 ,  H01L2224/75314 ,  H01L2224/7598 ,  H01L2224/76155 ,  H01L2224/80203 ,  H01L2224/80224 ,  H01L2224/82007 ,  H01L2224/821 ,  H01L2224/82102 ,  H01L2224/82106 ,  H01L2224/83093 ,  H01L2224/83121 ,  H01L2224/83132 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83224 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/83859 ,  H01L2224/83862 ,  H01L2224/83868 ,  H01L2224/83871 ,  H01L2224/83874 ,  H01L2224/92244 ,  H01L2224/9512 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01S5/02236 ,  H01S5/02276 ,  H05K1/18 ,  H05K13/04 ,  H05K13/046 ,  Y02E10/50 ,  Y10T29/49124 ,  Y10T29/51 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/13111

Abstract: A method of printing transferable components includes pressing a stamp including at least one transferable semiconductor component thereon on a target substrate such that the at least one transferable component and a surface of the target substrate contact opposite surfaces of a conductive eutectic layer. During pressing of the stamp on the target substrate, the at least one transferable component is exposed to electromagnetic radiation that is directed through the transfer stamp to reflow the eutectic layer. The stamp is then separated from the target substrate to delaminate the at least one transferable component from the stamp and print the at least one transferable component onto the surface of the target substrate. Related systems and methods are also discussed.

Abstract translation: 打印可转移部件的方法包括在目标基板上按压包括至少一个可转移半导体部件的印模，使得至少一个可转印部件和目标基板的表面接触导电共晶层的相对表面。 在压印目标基板上的印模时，将至少一个可转印部件暴露于电磁辐射，该电磁辐射被引导通过传送印模以回流共晶层。 然后将印模与目标基材分离，以将印模中的至少一种可转移组分分层，并将该至少一种可转移组分印刷到目标基材的表面上。 还讨论了相关系统和方法。

公开(公告)号：US09147368B2

公开(公告)日：2015-09-29

申请号：US14188859

申请日：2014-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Kasahara

IPC: G09G3/36 ,  G02F1/1343 ,  H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

CPC classification number: G02F1/134336 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134345 ,  G02F2201/52 ,  G09G3/3607 ,  G09G3/3611 ,  G09G3/3614 ,  G09G3/3659 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3213 ,  H01L27/3218 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78654 ,  H01L51/5284

Abstract: A new TFT arrangement is demonstrated, which enables prevention of TFT to be formed over a joint portion between the adjacent SOI layers prepared by the process including the separation of a thin single crystal semiconductor layer from a semiconductor wafer. The TFT arrangement is characterized by the structure where a plurality of TFTs each belonging to different pixels is gathered and arranged close to an intersection portion of a scanning line and a signal line. This structure allows the distance between regions, which are provided with the plurality of TFTs, to be extremely large compared with the distance between adjacent TFTs in the conventional TFT arrangement in which all TFTs are arranged in at a regular interval. The formation of a TFT over the joint portion can be avoided by the present arrangement, which leads to the formation of a display device with a negligible amount of display defects.

Abstract translation: 证明了一种新的TFT装置，其能够防止在通过包括从半导体晶片分离薄单晶半导体层的工艺制备的相邻SOI层之间的接合部分上形成TFT。 TFT装置的特征在于其中属于不同像素的多个TFT聚集并布置在扫描线和信号线的交叉部分附近的结构。 这种结构允许设置有多个TFT的区域之间的距离与其中所有TFT以规则间隔布置的常规TFT布置中的相邻TFT之间的距离相比非常大。 通过这种布置可以避免在接合部分上形成TFT，这导致形成具有可忽略的显示缺陷量的显示装置。

公开(公告)号：US20150255348A1

公开(公告)日：2015-09-10

申请号：US14717055

申请日：2015-05-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Eiji Sugiyama ,  Yoshitaka Dozen ,  Yumiko Fukumoto ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC: H01L21/78 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/7806 ,  H01L21/31111 ,  H01L21/6708 ,  H01L21/67132 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2021/775

Abstract: The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.

Abstract translation: 本发明的目的是在短时间内进行剥离处理。 在剥离层暴露于蚀刻气体的气氛的同时进行剥离。 或者，在蚀刻气体的气氛中将用于剥离层的蚀刻气体吹向剥离层的同时进行剥离。 具体地说，将蚀刻气体吹向待剥离的部分，同时从基板上撕下被剥离层。 或者，在用于剥离层的蚀刻剂中进行剥离，同时向剥离层供给蚀刻剂。

公开(公告)号：US20150255325A1

公开(公告)日：2015-09-10

申请号：US14644375

申请日：2015-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC: H01L21/762 ,  H01L21/308

CPC classification number: H01L21/76275 ,  H01L21/308 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/32 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/56

Abstract: A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

Abstract translation: 具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是 以及制造半导体器件的方法。 在本发明中，元件不形成在塑料膜上。 相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂 用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层） （第二接合部件（16））。 以这种方式，本发明实现了薄膜的薄化和重量的减轻。

公开(公告)号：US09117976B2

公开(公告)日：2015-08-25

申请号：US14074091

申请日：2013-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kaoru Hatano ,  Satoshi Seo ,  Takaaki Nagata ,  Tatsuya Okano

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/15 ,  H01L33/48 ,  H01L27/12 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L27/3258 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3244 ,  H01L29/78678 ,  H01L33/48 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5243 ,  H01L51/5246 ,  H01L51/5253 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.

Abstract translation: 本发明的目的是以简单的方式提供具有长寿命的柔性发光器件，并且使用柔性发光器件提供具有长寿命的便宜的电子器件。 提供一种柔性发光装置，其包括具有柔性和相对于可见光的透光性的基板; 衬底上的第一粘合剂层; 在第一粘合剂层上含有氮和硅的绝缘膜; 包括第一电极，面向第一电极的第二电极和第一电极和第二电极之间的EL层的发光元件; 在第二电极上的第二粘合剂层; 以及在所述第二粘合剂层上的金属基板，其中所述金属基板的厚度为10μm〜200μm。 此外，提供了使用柔性发光装置的电子装置。

公开(公告)号：US09111812B2

公开(公告)日：2015-08-18

申请号：US14531574

申请日：2014-11-03

Applicant: LG DISPLAY CO., LTD.

Inventor： Yong Woo Yoo ,  Seung Hyun Lee

IPC: H01L21/46 ,  H01L27/12 ,  H01L21/268

CPC classification number: H01L27/1266 ,  H01L21/268 ,  H01L27/1262

Abstract: Disclosed is a flexible display device and method of manufacturing the same in which a method of manufacturing a flexible display device may include forming a sacrificial layer on a support substrate, the sacrificial layer including at least one barrier layer and a separation layer, the barrier layer having a higher hydrogen content than that of the separation layer; forming a first flexible substrate on the support substrate provided with the sacrificial layer; forming a plurality of device elements on the first flexible substrate; and irradiating a laser onto the sacrificial layer through the support substrate and separating the support substrate from the first substrate.

Abstract translation: 公开了一种柔性显示装置及其制造方法，其中制造柔性显示装置的方法可包括在支撑基板上形成牺牲层，所述牺牲层包括至少一个阻挡层和分离层，所述阻挡层 具有比分离层高的氢含量; 在设置有牺牲层的支撑基板上形成第一柔性基板; 在所述第一柔性基板上形成多个装置元件; 以及通过所述支撑衬底将激光照射到所述牺牲层上，并将所述支撑衬底与所述第一衬底分离。

公开(公告)号：US20150221675A1

公开(公告)日：2015-08-06

申请号：US14684824

申请日：2015-04-13

Applicant: Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hironori YASUKAWA ,  Genshiro KAWACHI ,  Tomoya KATO ,  Kazuo KITA

IPC: H01L27/12 ,  H01L29/66

CPC classification number: H01L27/127 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/1292 ,  H01L29/66666 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of manufacturing a display device includes: forming a gate electrode on a substrate; forming a gate insulating film on the substrate; forming an oxide semiconductor on the substrate; forming a source electrode and a drain electrode on the substrate; forming a passivation film on the substrate; forming a common electrode on the substrate; forming an interlayer insulating film on the substrate; forming a pixel electrode on the substrate; forming an alignment film on the substrate; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays. The radiating UV-rays is performed after the forming an oxide semiconductor, and the heat-treating is performed after the forming a passivation film.

Abstract translation: 制造显示装置的方法包括：在基板上形成栅电极; 在基板上形成栅极绝缘膜; 在所述基板上形成氧化物半导体; 在基板上形成源电极和漏电极; 在衬底上形成钝化膜; 在基板上形成公共电极; 在所述基板上形成层间绝缘膜; 在所述基板上形成像素电极; 在基板上形成取向膜; 将紫外线照射到氧化物半导体上; 并对被紫外线照射的氧化物半导体进行热处理。 辐射紫外线在形成氧化物半导体之后进行，并且在形成钝化膜之后进行热处理。