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公开(公告)号：US20240337881A1
公开(公告)日：2024-10-10
申请号：US18626963
申请日：2024-04-04
发明人： Hajime KIMURA
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1335 , G02F1/13357 , G02F1/1345 , G02F1/1362 , G02F1/1368 , G09G3/34 , G09G3/36 , H01L27/12
CPC分类号： G02F1/1343 , G02B6/0051 , G02B6/0055 , G02F1/134363 , G02F1/1368 , G09G3/342 , G09G3/3648 , G02F1/133371 , G02F1/133502 , G02F1/133524 , G02F1/133528 , G02F1/133553 , G02F1/133555 , G02F1/133603 , G02F1/133604 , G02F1/134318 , G02F1/134372 , G02F1/13454 , G02F1/136213 , G02F1/136227 , G02F1/136231 , G02F2201/124 , G02F2201/50 , G09G2310/024 , G09G2320/0252 , G09G2340/16 , H01L27/1214 , H01L27/1225
摘要： A pixel electrode or a common electrode is a light-transmissive conductive film; therefore, it is formed of ITO conventionally. Accordingly, the number of manufacturing steps and masks, and manufacturing cost have been increased. An object of the present invention is to provide a semiconductor device, a liquid crystal display device, and an electronic appliance each having a wide viewing angle, less numbers of manufacturing steps and masks, and low manufacturing cost compared with a conventional device. A semiconductor layer of a transistor, a pixel electrode, and a common electrode of a liquid crystal element are formed in the same step.
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公开(公告)号：US20240302699A1
公开(公告)日：2024-09-12
申请号：US18663356
申请日：2024-05-14
发明人： Hajime KIMURA , Atsushi UMEZAKI
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1339 , G02F1/1343 , G02F1/1368 , G02F1/167 , G09G3/00 , G09G3/36 , H01L27/12 , H01L29/423 , H01L29/786
CPC分类号： G02F1/13624 , G02F1/136259 , G02F1/136286 , G02F1/1368 , G09G3/006 , G09G3/3648 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/7869 , G02F1/133302 , G02F1/133345 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/136254 , G02F1/167 , G09G2230/00 , G09G2310/0251 , H01L29/42384
摘要： An object is to provide a display device that performs accurate display. A circuit is formed using a transistor that includes an oxide semiconductor and has a low off-state current. A precharge circuit or an inspection circuit is formed in addition to a pixel circuit. The off-state current is low because the oxide semiconductor is used. Thus, it is not likely that a signal or voltage is leaked in the precharge circuit or the inspection circuit to cause defective display. As a result, a display device that performs accurate display can be provided.
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公开(公告)号：US20240234581A1
公开(公告)日：2024-07-11
申请号：US18582949
申请日：2024-02-21
IPC分类号： H01L29/786 , G09G3/36 , H01L27/12
CPC分类号： H01L29/78693 , G09G3/3648 , H01L27/1225 , H01L29/78618 , G09G2300/0842
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
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公开(公告)号：US20230402547A1
公开(公告)日：2023-12-14
申请号：US18239164
申请日：2023-08-29
发明人： Hajime KIMURA
IPC分类号： H01L29/786 , G09G3/3233 , H01L27/12
CPC分类号： H01L29/78621 , G09G3/3233 , H01L27/1225 , H01L27/124 , H01L27/1255 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0262 , G09G2320/043 , H01L2029/7863
摘要： To provide a method for driving a semiconductor device, by which influence of variation in threshold voltage and mobility of transistors can be reduced. The semiconductor device includes an n-channel transistor, a switch for controlling electrical connection between a gate and a first terminal of the transistor, a capacitor electrically connected between the gate and a second terminal of the transistor, and a display element. The method has a first period for holding the sum of a voltage corresponding to the threshold voltage of the transistor and an image signal voltage in the capacitor; a second period for turning on the switch so that electric charge held in the capacitor in accordance with the sum of the image signal voltage and the threshold voltage is discharged through the transistor; and a third period for supplying a current to the display element through the transistor after the second period.
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公开(公告)号：US20230317741A1
公开(公告)日：2023-10-05
申请号：US18110430
申请日：2023-02-16
发明人： Hajime KIMURA
IPC分类号： H01L27/12 , G09G3/3233 , H10K59/121
CPC分类号： H01L27/1255 , G09G3/3233 , H01L27/1225 , H01L27/124 , H10K59/1213 , G09G3/3291
摘要： A semiconductor device that is less influenced by variations in characteristics between transistors or variations in a load, and is efficient even for normally-on transistors is provided. The semiconductor device includes at least a transistor, two wirings, three switches, and two capacitors. A first switch controls conduction between a first wiring and each of a first electrode of a first capacitor and a first electrode of a second capacitor. A second electrode of the first capacitor is connected to a gate of the transistor. A second switch controls conduction between the gate and a second wiring. A second electrode of the second capacitor is connected to one of a source and a drain of the transistor. A third switch controls conduction between the one of the source and the drain and each of the first electrode of the first capacitor and the first electrode of the second capacitor.
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公开(公告)号：US20230309308A1
公开(公告)日：2023-09-28
申请号：US18129120
申请日：2023-03-31
摘要： A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.
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公开(公告)号：US20230299209A1
公开(公告)日：2023-09-21
申请号：US18136963
申请日：2023-04-20
IPC分类号： H01L29/786 , G09G3/36 , H01L27/12
CPC分类号： H01L29/78693 , G09G3/3648 , H01L27/1225 , H01L29/78618 , G09G2300/0842
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
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公开(公告)号：US20230298650A1
公开(公告)日：2023-09-21
申请号：US18006323
申请日：2021-07-20
CPC分类号： G11C11/221 , H10B53/30 , H10B51/30
摘要： Provided is a semiconductor device capable of retaining data for a long time. The semiconductor device includes a cell provided with a capacitor, a first transistor, and a second transistor; the capacitor includes a first electrode, a second electrode, and a ferroelectric layer; the ferroelectric layer is provided between the first electrode and the second electrode and polarization reversal occurs by application of a first saturated polarization voltage or a second saturated polarization voltage whose polarity is different from that of the first saturated polarization voltage; and the first electrode, one of a source and a drain of the first transistor, and a gate of the second transistor are electrically connected to one another. In a first period, the first saturated polarization voltage is applied to the ferroelectric layer. In a second period, a voltage having a value between the first saturated polarization voltage and the second saturated polarization voltage is applied to the ferroelectric layer as a data voltage.
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公开(公告)号：US20230230994A1
公开(公告)日：2023-07-20
申请号：US18105005
申请日：2023-02-02
IPC分类号： H01L27/146 , H01L27/12 , H01L29/786 , H04N25/771 , H04N25/772 , H10B99/00
CPC分类号： H01L27/14634 , H01L27/1207 , H01L27/1225 , H01L27/1255 , H01L29/78648 , H01L29/7869 , H04N25/771 , H04N25/772 , H10B99/00
摘要： An imaging device which has a stacked-layer structure and can be manufactured easily is provided. The imaging device includes a signal processing circuit, a memory device, and an image sensor. The imaging device has a stacked-layer structure in which the memory device is provided above the signal processing circuit, and the image sensor is provided above the memory device. The signal processing circuit includes a transistor formed on a first semiconductor substrate, the memory device includes a transistor including a metal oxide in a channel formation region, and the image sensor includes a transistor formed on a second semiconductor substrate.
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公开(公告)号：US20230132733A1
公开(公告)日：2023-05-04
申请号：US18089206
申请日：2022-12-27
发明人： Hajime KIMURA
IPC分类号： G02F1/13357 , G09G3/34 , G09G3/36
摘要： A low-resolution image is displayed at high resolution and power consumption is reduced. Resolution is made higher by super-resolution processing. Then, display is performed with the luminance of a backlight controlled by local dimming after the super-resolution processing. By controlling the luminance of the backlight, power consumption can be reduced. Further, by performing the local dimming after the super-resolution processing, accurate display can be performed.
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