公开(公告)号：US12002861B2

公开(公告)日：2024-06-04

申请号：US17626961

申请日：2020-07-07

申请人： PARAGRAF LIMITED

发明人： Hugh Glass ,  Ivor Guiney ,  Martin Tyler ,  Simon Thomas

IPC分类号： H01L29/40 ,  H01L21/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L33/40 ,  H01L33/44 ,  H01L29/16 ,  H01L29/45

CPC分类号： H01L29/401 ,  H01L21/043 ,  H01L31/0216 ,  H01L31/0224 ,  H01L33/40 ,  H01L33/44 ,  H01L29/1606 ,  H01L29/45 ,  H01L2933/0016 ,  H01L2933/0025

摘要： The present invention pro ides a method of providing an electrical contact on a graphene surface, the method comprising: (i) providing a graphene layer structure comprising one or more graphene layers and having a polymer coating on a surface thereof; (ii) contacting one or more portions of the polymer coating with a conductive metal-containing composition comprising a solvent, wherein the polymer coating is soluble in the solvent: and (iii) volatilising the solvent to deposit the conductive metal on the surface of the graphene layer structure.

公开(公告)号：US20180331200A1

公开(公告)日：2018-11-15

申请号：US15570369

申请日：2017-06-20

申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： Hui Xia

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L29/66045 ,  H01L21/043 ,  H01L21/044 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78684

摘要： The present invention provides a TFT substrate manufacturing method, which includes first forming a graphene semiconductor active layer on a metal foil, then sequentially forming an inorganic insulation layer and an organic base on the graphene semiconductor active layer, followed by turning up-side down to set the metal foil on a topmost layer, then forming a photoresist layer, through a patterning operation, on the metal foil and subjecting the metal foil to etching to form a source electrode and a drain electrode, then sequentially forming an organic insulation layer and a gate electrode conductor layer on the photoresist layer and the graphene semiconductor active layer, and finally, applying a photoresist peeling agent to remove the photoresist layer with portions of the organic insulation layer and the gate electrode conductor layer located thereon removed therewith so as to obtain patterned gate insulation layer and gate electrode. The manufacturing method involves an operation of turning up-side down to to allow the metal foil that is used to deposit a graphene film to be re-used as an electrode material for formation of the source and drain electrodes so that an effect of lowering down manufacturing cost and simplifying operations can be achieved. And, through application of lift-off technique, only one mask is necessary to obtain patterned source electrode, drain electrode, and gate electrode.

公开(公告)号：US20180308696A1

公开(公告)日：2018-10-25

申请号：US15496814

申请日：2017-04-25

申请人： Texas Instruments Incorporated

发明人： Luigi Colombo ,  Archana Venugopal

IPC分类号： H01L21/04 ,  H01L29/16 ,  H01L29/786 ,  H01L29/45

CPC分类号： H01L21/043 ,  H01L29/1606 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/78684

摘要： An electronic device has a graphene layer having one or more atomic layers of graphene, with low resistance contacts that includes a carbon-doped metal layer directly on the graphene layer. The electronic device is formed by forming a carbon-doped metal layer on a substrate layer of the electronic device. The carbon-doped metal layer is subsequently heated to a temperature above which carbon in the carbon-doped metal layer becomes mobile, and subsequently cooled. The carbon in the carbon-doped metal forms the graphene layer under the carbon-doped metal layer and over the substrate layer. The carbon-doped metal layer is removed from an area outside of a contact area, leaving the carbon-doped metal in the contact area to provide a contact layer to the graphene layer.

公开(公告)号：US10084095B2

公开(公告)日：2018-09-25

申请号：US15322490

申请日：2016-03-01

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xiaolong Li ,  Zheng Liu ,  Xiaoyong Lu ,  Chunping Long ,  Huijuan Zhang

IPC分类号： H01L31/0312 ,  H01L29/786 ,  H01L29/04 ,  H01L29/16 ,  H01L29/66 ,  H01L21/04 ,  H01L21/02

CPC分类号： H01L29/78609 ,  H01L21/02527 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/043 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78621 ,  H01L29/78684 ,  H01L29/78696

摘要： The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal. According to the thin film transistor, the method for manufacturing the same, and the array substrate provided in the embodiments of present disclosure, by providing high resistance regions on external sides of the middle channel region of the active layer, the carrier mobility is reduced and the leakage current of the thin film transistor made of single crystalline diamond is effectively suppressed.

公开(公告)号：US10014258B2

公开(公告)日：2018-07-03

申请号：US15512916

申请日：2015-08-31

申请人： Sumitomo Electric Industries, Ltd. ,  Renesas Electronics Corporation

发明人： Shunsuke Yamada ,  So Tanaka ,  Daisuke Hamajima ,  Shinji Kimura ,  Masayuki Kobayashi ,  Masaki Kijima ,  Maki Hamada

IPC分类号： H01L29/66 ,  H01L23/532 ,  H01L29/16 ,  H01L29/78 ,  H01L29/45

CPC分类号： H01L23/53295 ,  H01L21/043 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/53223 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/51 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/00

摘要： The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.

公开(公告)号：US20180166537A1

公开(公告)日：2018-06-14

申请号：US15840590

申请日：2017-12-13

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  TOHOKU UNIVERSITY

发明人： Yasunori Tateno ,  Masaki Ueno ,  Masaya Okada ,  Fuminori Mitsuhashi ,  Maki Suemitsu ,  Hirokazu Fukidome

IPC分类号： H01L29/16 ,  H01L29/786 ,  H01L29/423 ,  H01L29/10 ,  H01L29/417 ,  H01L29/51 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/311

CPC分类号： H01L29/1606 ,  H01L21/02 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02631 ,  H01L21/04 ,  H01L21/043 ,  H01L21/044 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/10 ,  H01L29/1079 ,  H01L29/16 ,  H01L29/417 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/423 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/517 ,  H01L29/66 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/05 ,  H01L51/0558

摘要： An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, electrodes of source, drain, and a gate insulating film on the graphene layer. The electron device further includes a firs gate electrode on the gate insulating film between the source electrode and the drain electrode, and further includes a second gate electrode within the substrate. The second gate electrode puts another gate insulating film against the graphene layer, or a part of the substrate.

公开(公告)号：US09972499B2

公开(公告)日：2018-05-15

申请号：US15065809

申请日：2016-03-09

申请人： FUJI ELECTRIC CO., LTD.

发明人： Haruo Nakazawa ,  Masaaki Ogino ,  Tsunehiro Nakajima ,  Kenichi Iguchi ,  Masaaki Tachioka ,  Kiyokazu Nakagawa

IPC分类号： H01L21/285 ,  H01L29/66 ,  H01L29/16 ,  H01L21/04 ,  H01L29/45 ,  H01L21/28 ,  H01L29/78

CPC分类号： H01L21/28518 ,  H01L21/043 ,  H01L21/0485 ,  H01L21/28 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/665 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a front surface and a back surface; forming a transition metal layer on a surface of the semiconductor substrate; and exposing the semiconductor substrate having the transition metal layer formed thereon to a hydrogen plasma atmosphere formed by microwaves, to cause the transition metal layer to generate heat. During exposure of the semiconductor substrate, a portion of the semiconductor substrate contacting the transition metal layer is heated by a transfer of heat from the transition metal layer and, at an interface of the transition metal layer and the semiconductor substrate, an ohmic contact is formed by reaction of the transition metal layer and the semiconductor substrate, such as to form a transition metal silicide when the semiconductor substrate is silicon carbide. The ohmic contact provides a lower contact resistivity and device properties can be prevented from degrading.

公开(公告)号：US09935283B2

公开(公告)日：2018-04-03

申请号：US15235142

申请日：2016-08-12

申请人： International Business Machines Corporation

发明人： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC分类号： H01L51/05 ,  H01L29/786 ,  H01L29/16 ,  H01L29/06 ,  H01L21/02 ,  H01L21/283 ,  H01L29/20 ,  H01L29/24 ,  H01L21/04 ,  H01L51/00 ,  H01L21/441 ,  H01L29/66 ,  H01L29/778 ,  G01N27/414 ,  H01L43/08 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L51/0541 ,  G01N27/414 ,  G01N27/4141 ,  G01N27/4146 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02568 ,  H01L21/02606 ,  H01L21/043 ,  H01L21/283 ,  H01L21/441 ,  H01L21/7682 ,  H01L23/53276 ,  H01L28/60 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/78684 ,  H01L29/78696 ,  H01L43/08 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2221/1094

摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.

公开(公告)号：US09865699B2

公开(公告)日：2018-01-09

申请号：US15166863

申请日：2016-05-27

申请人： FUJITSU LIMITED

发明人： Daiyu Kondo ,  Shintaro Sato

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L23/532 ,  H01L29/778 ,  H01L21/04 ,  H01L29/786

CPC分类号： H01L29/66045 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/043 ,  H01L23/53276 ,  H01L29/1606 ,  H01L29/66015 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78684 ,  H01L29/78696 ,  H01L2924/0002 ,  Y10S977/734 ,  H01L2924/00

摘要： A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.

公开(公告)号：US09842958B2

公开(公告)日：2017-12-12

申请号：US15339295

申请日：2016-10-31

申请人： UChicago Argonne, LLC

发明人： Anirudha V. Sumant ,  John Smedley ,  Erik Muller

IPC分类号： H01L31/115 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0368

CPC分类号： H01L31/115 ,  H01L21/041 ,  H01L21/043 ,  H01L29/1602 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/03682 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.