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公开(公告)号:US20190237677A1
公开(公告)日:2019-08-01
申请号:US16358910
申请日:2019-03-20
Applicant: FUJIFILM Corporation
Inventor: Takashi GOTO , Eiji FUKUZAKI , Tetsuya WATANABE
IPC: H01L51/00 , C07D517/14 , C07D493/14 , C07D495/14 , C07D513/14 , C07D498/14
CPC classification number: H01L51/0071 , C07D493/14 , C07D495/14 , C07D498/14 , C07D513/14 , C07D517/14 , H01L29/786 , H01L51/001 , H01L51/0067 , H01L51/0068 , H01L51/0073 , H01L51/05 , H01L51/0558
Abstract: Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.
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公开(公告)号:US10074813B2
公开(公告)日:2018-09-11
申请号:US15648463
申请日:2017-07-13
Applicant: FUJIFILM CORPORATION
Inventor: Yosuke Yamamoto , Yushi Hongo , Kensuke Masui
IPC: H01L29/08 , H01L35/24 , H01L51/00 , C07D495/22 , H01L29/786 , H01L51/05 , C09D11/03 , C09D11/033 , C09D11/102 , C09D11/36 , C09D11/38 , C09D11/52
CPC classification number: H01L51/0074 , C07D495/22 , C09D11/03 , C09D11/033 , C09D11/102 , C09D11/36 , C09D11/38 , C09D11/52 , H01L29/786 , H01L51/0036 , H01L51/0068 , H01L51/0069 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0094 , H01L51/05
Abstract: An object of the present invention is to provide an organic semiconductor composition, which makes it possible to obtain an organic semiconductor film having high mobility and being excellent in film uniformity and heat resistance, and a method for manufacturing an organic semiconductor element.The organic semiconductor composition of the present invention contains an organic semiconductor as Component A and an organic solvent, which is represented by Formula B-1 and has a melting point of equal to or lower than 25° C. and a boiling point of equal to or higher than 150° C. and equal to or lower than 280° C., as Component B, in which an ionization potential of Component A is equal to or higher than 5.1 eV. In the formula, X represents O, S, S═O, O═S═O, or NR, Y1 to Y4 each independently represent NR1 or CR10R11, R, R1, R10, and R11 each independently represent a hydrogen atom or a substituent, and n represents 1 or 2.
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公开(公告)号:US20180175303A1
公开(公告)日:2018-06-21
申请号:US15393173
申请日:2016-12-28
Inventor: Ansoon KIM , Songwoung HONG , Jeong Won KIM , Hyuksang KWON
IPC: H01L51/00
CPC classification number: H01L51/0067 , C01B25/02 , H01L29/24 , H01L29/66969 , H01L29/70 , H01L29/778 , H01L29/861 , H01L51/0015 , H01L51/05 , H01L51/0558 , H01L51/0575 , H01L51/42
Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.
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公开(公告)号:US09932441B2
公开(公告)日:2018-04-03
申请号:US15497226
申请日:2017-04-26
Applicant: FUJIFILM CORPORATION
Inventor: Tetsu Kitamura
IPC: H01L29/786 , C08G61/12 , H01L51/05 , C08L65/00 , C08L101/00
CPC classification number: C08G61/122 , C08G61/12 , C08G61/123 , C08G61/124 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/1428 , C08G2261/18 , C08G2261/312 , C08G2261/3223 , C08G2261/3225 , C08G2261/3243 , C08G2261/3244 , C08G2261/3327 , C08G2261/334 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/51 , C08G2261/92 , C08L65/00 , C08L101/00 , H01L29/786 , H01L51/05 , H01L51/052 , H01L51/0529 , C08L25/16
Abstract: Objects of the present invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof, to provide a novel compound which is suitable as an organic semiconductor, and to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a manufacturing method thereof, and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention has an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1.
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公开(公告)号:US09722188B2
公开(公告)日:2017-08-01
申请号:US14807227
申请日:2015-07-23
Applicant: LG Chem, Ltd.
Inventor: Jae-Soon Bae , Ji-Eun Kim , Hye-Young Jang , Jeung-Gon Kim , Jun-Gi Jang , Sung-Kil Hong , Tae-Yoon Park , Dae-Woong Lee
IPC: H01L51/00 , C07D409/10 , C07D403/10 , C07D209/80 , C07D409/04 , C07D209/82 , H01L51/50 , H01L51/42 , H01L51/05
CPC classification number: H01L51/0072 , C07D209/80 , C07D209/82 , C07D403/10 , C07D409/04 , C07D409/10 , H01L51/0067 , H01L51/0068 , H01L51/05 , H01L51/42 , H01L51/5012 , H01L51/5056 , H01L51/5072 , H01L51/5088 , Y02E10/549 , Y02P70/521
Abstract: The present invention provides a novel compound that is capable of largely improving a life time, efficiency, electrochemical stability, and thermal stability of an organic electronic device, and an organic electronic device that comprises an organic material layer comprising the compound.
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公开(公告)号:US20170168000A1
公开(公告)日:2017-06-15
申请号:US15442775
申请日:2017-02-27
Applicant: FUJIFILM CORPORATION
Inventor: Takahiko ICHIKI
CPC classification number: G01N27/125 , G01N27/4141 , G01N33/0027 , H01L21/28 , H01L29/786 , H01L51/05 , H01L51/0545 , H01L51/0558
Abstract: The present invention provides a gas sensor which exhibits high detection sensitivity and includes an organic transistor and an organic transistor. A gas sensor of the present invention includes a bottom-gate type organic transistor including a source electrode, a drain electrode, a gate electrode, a gate insulating layer, an organic semiconductor layer, and a receptor layer which is disposed between the gate insulating layer and the organic semiconductor layer and includes a compound that interacts with gas molecules which are a detection subject.
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公开(公告)号:US20160211473A1
公开(公告)日:2016-07-21
申请号:US14916610
申请日:2014-09-04
CPC classification number: H01L51/0097 , H01L51/05 , H01L51/42 , H01L51/50 , H05K1/0283 , H05K1/0296 , H05K1/0353 , H05K1/181 , H05K2201/0129
Abstract: The invention relates to a bendable electrically interconnecting foil for making flexible electronic circuits, more in particular circuits comprising rigid electronic components such as integrated circuits. The foil comprises a flexible substrate and stretchable conductive tracks for connecting the electronic components. Between the substrate and the tracks a resilient layer is situated. The invention further relates to an electronic circuit comprising the bendable electrically interconnecting foil.
Abstract translation: 本发明涉及一种用于制造柔性电子电路的可弯曲的电互连箔,更具体地涉及包括诸如集成电路的刚性电子部件的电路。 箔包括柔性基板和用于连接电子部件的可拉伸导电轨迹。 在基板和轨道之间设有弹性层。 本发明还涉及一种包括可弯曲的电互连箔的电子电路。
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公开(公告)号:US20150280126A1
公开(公告)日:2015-10-01
申请号:US14434518
申请日:2013-10-07
Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
Inventor: Kouichi Rokuhara , Shuichi Sassa
CPC classification number: H01L51/003 , C08G61/12 , C08G2261/124 , C08G2261/135 , C08G2261/141 , C08G2261/3142 , C08G2261/3162 , C08G2261/5222 , C08G2261/76 , C08G2261/95 , H01L29/786 , H01L51/0003 , H01L51/0029 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/05 , H01L51/10 , H01L51/42 , H01L51/44 , H01L51/50 , H01L51/5056 , H01L51/56 , H01L2251/308 , Y02E10/549 , Y02P70/521
Abstract: When a thin film is formed by an application method, damage to a substrate or existing electrodes and functional layers can be reduce. A method for manufacturing an electronic device comprising two or more electrodes, and an organic thin film provided between the two or more electrodes, the method comprising the steps of: forming a coating film by applying a coating liquid that comprises a material having a crosslinking group, and forming the organic thin film by repeating an irradiation of electromagnetic waves to the coating film to cross-link with the crosslinking group.
Abstract translation: 当通过施加方法形成薄膜时,可以减少对基板或现有电极和功能层的损坏。 一种用于制造包括两个或更多个电极的电子器件的方法以及设置在所述两个或更多个电极之间的有机薄膜,所述方法包括以下步骤:通过涂覆包含具有交联基团的材料的涂布液形成涂膜 并且通过重复向涂膜照射电磁波来形成有机薄膜以与交联基团交联。
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公开(公告)号:US20150132886A1
公开(公告)日:2015-05-14
申请号:US14386123
申请日:2013-04-02
Applicant: BASF SE
Inventor: Pascal Hayoz
CPC classification number: H01L51/0094 , C07D487/04 , C07F7/0812 , C07F7/083 , C07F7/0838 , C07F7/0878 , C08G61/12 , C08G61/124 , C08G61/126 , C08G73/0672 , C08G2261/124 , C08G2261/1412 , C08G2261/144 , C08G2261/3222 , C08G2261/3223 , C08G2261/3243 , C08G2261/3327 , C08G2261/344 , C08G2261/364 , C08G2261/411 , C08G2261/91 , C08G2261/92 , C08G2261/95 , C09B57/004 , C09B67/0033 , C09B69/008 , C09B69/109 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1092 , C09K2211/1416 , C09K2211/1425 , C09K2211/1458 , C09K2211/1466 , C09K2211/1491 , H01L51/00 , H01L51/0003 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/0055 , H01L51/0074 , H01L51/05 , H01L51/0558 , H01L51/42 , H01L51/4253 , H01L51/5012 , H05B33/10 , Y02E10/549
Abstract: The present invention relates to polymers, comprising a repeating unit of the formula (I), and compounds of formula (II), wherein Y, Y15, Y16 and Y17 are independently of each other a group of formula (a) characterized in that the polymers and compounds comprise silicon-containing solubilizing side chains and their use as organic semiconductor in organic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers and compounds according to the invention can have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers and compounds according to the invention are used in organic field effect transistors, organic photovoltaics and photodiodes.
Abstract translation: 本发明涉及包含式(I)的重复单元和式(II)的化合物的聚合物,其中Y,Y15,Y16和Y17彼此独立地是式(a)的基团,其特征在于, 聚合物和化合物包括含硅增溶侧链及其在有机器件中的有机半导体的用途,特别是在有机光伏和光电二极管中,或在含有二极管和/或有机场效应晶体管的器件中。 根据本发明的聚合物和化合物可以在有机溶剂中具有优异的溶解性和优异的成膜性能。 另外,当根据本发明的聚合物和化合物用于有机场效应晶体管,有机光伏和有机光电池中时,可以观察到能量转换的高效率,优异的场效应迁移率,良好的开/关电流比和/或优异的稳定性 光电二极管
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公开(公告)号:US09029695B2
公开(公告)日:2015-05-12
申请号:US14188292
申请日:2014-02-24
Applicant: Raynergy Tek Inc.
Inventor: Antonio Facchetti
CPC classification number: H01L51/0035 , C08G61/122 , C08G61/126 , C08G2261/334 , C08G2261/344 , C08G2261/512 , C08G2261/91 , C08G2261/92 , C08G2261/95 , H01L51/0036 , H01L51/05 , H01L51/42 , H01L51/5012 , H01L51/5296 , Y02E10/549
Abstract: The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
Abstract translation: 本教导涉及新的半导体聚合物。 本文公开的聚合物可以表现出高的载流子迁移率和/或有效的光吸收/发射特性,并且可以具有某些加工优点,例如在环境条件下的溶液加工性和/或良好的稳定性。
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