公开(公告)号：US09919386B2

公开(公告)日：2018-03-20

申请号：US13207214

申请日：2011-08-10

申请人： John A. Vivari, Jr.

发明人： John A. Vivari, Jr.

IPC分类号： B32B15/04 ,  B23K1/20 ,  B23K35/363 ,  B23K35/36 ,  B23K35/02 ,  B23K35/362 ,  B23K35/368 ,  B23K35/40 ,  B32B15/01 ,  B32B15/02 ,  H05K3/34

CPC分类号： B23K35/3613 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/36 ,  B23K35/3618 ,  B23K35/362 ,  B23K35/368 ,  B23K35/40 ,  B32B15/01 ,  B32B15/02 ,  B32B15/04 ,  H05K3/3489 ,  Y10T428/12292 ,  Y10T428/12493 ,  Y10T428/2951 ,  Y10T428/31678

摘要： A flux for use in soldering comprises a first constituent and one or more secondary constituents that is selected from solvents, thickeners, and/or metal oxide reducing agents. The flux has a temperature profile in which the flux is in a non-flowable inactive state at temperatures at and below a maximum storage temperature that is above about 27° C., a liquid active state at an activation temperature, and a flowable inactive state in a deposition temperature range above the maximum storage temperature and below the activation temperature. A solder material comprises solder particles dispersed in the flux.

公开(公告)号：US20180056459A1

公开(公告)日：2018-03-01

申请号：US15252887

申请日：2016-08-31

申请人： SIEMENS ENERGY, INC.

发明人： Gerald J. Bruck

IPC分类号： B23P6/04 ,  B23K1/00 ,  B23K1/06 ,  B23K1/19 ,  B23K1/20 ,  B23K31/12 ,  B23K1/018

CPC分类号： B23K1/018 ,  B23K1/0004 ,  B23K1/0018 ,  B23K1/002 ,  B23K1/06 ,  B23K1/206 ,  B23P6/045

摘要： A method for braze repair of tight cracks in a superalloy component is provided. The method includes directing energy, e.g., from an acoustic energy source, towards surfaces of the tight crack to break up one or more contaminants, corrosion products, or oxides at the surface. The directed energy may cause opposed walls of the tight crack to vibrate to break up the oxides, and to generate a modest heat for allowing infiltration of the tight crack with a braze material. The braze material is then melted at a melt temperature of the braze material but below the melt temperature of the component. The braze material is then solidified to repair the tight crack.

公开(公告)号：US09867295B2

公开(公告)日：2018-01-09

申请号：US14148856

申请日：2014-01-07

申请人： Dell Products L.P.

发明人： Bhavesh Patel ,  Sandor Farkas ,  Wallace Huson Ables

IPC分类号： H01L21/66 ,  H01L23/00 ,  G01R31/02 ,  G01R31/04 ,  H05K3/34 ,  G06F1/18 ,  B23K1/00 ,  B23K1/20 ,  B23K3/06 ,  B23K3/08 ,  H05K1/14

CPC分类号： H05K3/3436 ,  B23K1/0016 ,  B23K1/20 ,  B23K3/0623 ,  B23K3/087 ,  G01R31/026 ,  G01R31/048 ,  G06F1/181 ,  H01L22/12 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L23/562 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/13028 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/13582 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/14051 ,  H01L2224/14131 ,  H01L2224/14135 ,  H01L2224/14136 ,  H01L2224/14179 ,  H01L2224/14505 ,  H01L2224/14517 ,  H01L2224/16106 ,  H01L2224/16227 ,  H01L2224/17051 ,  H01L2224/17135 ,  H01L2224/17136 ,  H01L2224/17517 ,  H01L2224/811 ,  H01L2224/81139 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/8123 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2924/15311 ,  H01L2924/19103 ,  H01L2924/3512 ,  H05K1/144 ,  H05K1/145 ,  H05K2201/0221 ,  H05K2201/10022 ,  H05K2201/10734 ,  H05K2203/041 ,  H05K2203/159 ,  H05K2203/162 ,  H05K2203/163 ,  Y02P70/613 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Systems and methods for providing a ball grid array connection include providing a circuit board having a circuit board surface including a plurality of pads. A ball grid array component includes a plurality of solder balls. The ball grid array component is coupled to the circuit board to position each of the plurality of solder balls adjacent a respective one of the plurality of pads. A solder reflow process is then performed to produce a plurality of soldered connections from each of the plurality of solder balls and a respective one of the plurality of pads. At least one spacer member is provided between the ball grid array component and the circuit board during the solder reflow process to provide a mechanical stop between the ball grid array component and the circuit board and a minimum height for each of the plurality of soldered connections.

公开(公告)号：US20170368644A1

公开(公告)日：2017-12-28

申请号：US15631894

申请日：2017-06-23

申请人： Purdue Research Foundation

发明人： Carol A. Handwerker ,  John Ryan Holaday

IPC分类号： B23K35/26 ,  B23K20/16 ,  B23K1/20

CPC分类号： B23K35/264 ,  B23K1/203 ,  B23K20/16 ,  H01L24/00 ,  H01L2224/83

摘要： Processes of joining substrates via transient liquid phase bonding (TLPB). The processes include providing an interlayer of a low melting temperature phase (LTP) that includes Sn and Bi between and in contact with at least two substrates, and heating the substrates and the interlayer therebetween at a processing temperature equal to or above 200° C. such that the interlayer liquefies and the LTP interacts with high melting temperature phases (HTPs) of the substrates to yield isothermal solidification of the interlayer. The processing temperature is maintained for a duration sufficient for the interlayer to be completely consumed and a solid bond is formed between the substrates. Also provided are assemblies formed by the above noted processes.

公开(公告)号：US09839142B2

公开(公告)日：2017-12-05

申请号：US14820025

申请日：2015-08-06

申请人： IMI USA, INC.

发明人： Timothy P. Patterson ,  William Lutap ,  Roger Nguyen

IPC分类号： B23K3/08 ,  H05K3/34 ,  B23K1/20 ,  B23K1/00 ,  B23K1/008

CPC分类号： H05K3/34 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/203 ,  B23K3/08 ,  H01L2924/0002 ,  H05K3/3494 ,  H05K2203/04 ,  H05K2203/085 ,  H01L2924/00

摘要： A soldering device and method of soldering are disclosed. The device may include at least one soldering pallet assembly. The pallet assembly may be subjected to a first atmosphere configured within the soldering pallet assembly and a second atmosphere configured external to the pallet assembly, the second atmosphere is an ambient atmosphere. At least one solder element may be positioned within the first atmosphere, and the solder element may be configured to attach an electrical component to an integrated circuit chip that is positioned within the pallet assembly.

公开(公告)号：US09815150B2

公开(公告)日：2017-11-14

申请号：US14346353

申请日：2012-09-06

申请人： Dagmar Steiner ,  Jan Halvor Nordlien ,  Jeffrey L. Insalaco

发明人： Dagmar Steiner ,  Jan Halvor Nordlien ,  Jeffrey L. Insalaco

IPC分类号： B23K35/362 ,  B23K35/365 ,  C22C21/00 ,  B23K1/00 ,  B23K1/20 ,  F28F21/08 ,  B23K35/36

CPC分类号： B23K35/365 ,  B23K1/0012 ,  B23K1/203 ,  B23K35/362 ,  C22C21/00 ,  F28F21/084 ,  F28F2275/04

摘要： A pre-flux coating for the manufacturing of heat exchanger components of aluminum, wherein the coating comprises a combination of fluxes in the form of potassium aluminum fluoride K1-3AlF4-6, potassium trifluoro zincate, KZnF3, lithium aluminum fluoride Li3AlF6, a filler material in the form of metallic Si particles, Al—Si particles and/or potassium fluoro silicate K2SiF6, an additive in the form of aluminum oxide and at least one other oxide selected from the group consisting of zinc oxide, titanium oxide and cerium oxide forming a post braze ceramic layer, and a solvent and a binder containing at least 10% by weight of a synthetic resin which is based, as its main constituent, on a methacrylate homopolymer or a methacrylate copolymer.

公开(公告)号：US20170320155A1

公开(公告)日：2017-11-09

申请号：US15658084

申请日：2017-07-24

申请人： Pac Tech - Packaging Technologies GmbH

发明人： Ghassem Azdasht

IPC分类号： B23K1/20 ,  B23K3/06 ,  H01L21/683 ,  H01L23/00 ,  B23K1/005

CPC分类号： B23K1/20 ,  B23K1/0056 ,  B23K3/06 ,  B23K3/0607 ,  H01L21/6835 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/11003 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/7515 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/014 ,  H01L2924/12042

摘要： A method for forming solder deposits on elevated contact metallizations of terminal faces of a substrate formed in particular as a semiconductor component includes bringing wetting surfaces of the contact metallizations into physical contact with a solder material layer. The solder material is arranged on a solder material carrier. At least for the duration of the physical contact, a heating of the substrate and a tempering of the solder material layer takes place. Subsequently a separation of the physical contact between the contact metallizations wetted with solder material and the solder material layer takes place.

公开(公告)号：US09793057B2

公开(公告)日：2017-10-17

申请号：US15149309

申请日：2016-05-09

申请人： Kemet Electronics Corporation

发明人： John E. McConnell ,  Garry L. Renner ,  John Bultitude

IPC分类号： H01G9/00 ,  H01G9/07 ,  H01G9/008 ,  H01G9/045 ,  B23K1/00 ,  B23K1/005 ,  B23K1/008 ,  B23K1/20 ,  B23K35/36 ,  B23K35/02 ,  H01G4/30 ,  H01G4/005 ,  H01G4/232 ,  B23K35/28 ,  B23K101/42

CPC分类号： H01G9/0032 ,  B23K1/0016 ,  B23K1/0053 ,  B23K1/008 ,  B23K1/203 ,  B23K35/0227 ,  B23K35/286 ,  B23K35/3613 ,  B23K2101/42 ,  H01G4/005 ,  H01G4/2325 ,  H01G4/30 ,  H01G9/0029 ,  H01G9/008 ,  H01G9/045 ,  H01G9/07 ,  H01L2224/83825 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1461 ,  Y10T29/435 ,  H01L2924/00

摘要： An improved method for forming a capacitor is provided as is a capacitor, or electrical component, formed by the method. The method includes providing an aluminum containing anode with an aluminum oxide dielectric thereon; forming a cathode on a first portion of the aluminum oxide dielectric; bonding an anode lead to the aluminum anode on a second portion of the aluminum oxide by a transient liquid phase sintered conductive material thereby metallurgical bonding the aluminum anode to the anode lead; and bonding a cathode lead to said cathode.

公开(公告)号：US09776929B2

公开(公告)日：2017-10-03

申请号：US14366432

申请日：2012-12-20

申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： Valérie Chaumat ,  Jean-François Henne ,  Fiqiri Hodaj

IPC分类号： B23K31/00 ,  B23K31/02 ,  C04B37/00 ,  B23K1/00 ,  B23K1/19 ,  B23K1/20 ,  B23K35/30 ,  B23K35/36 ,  C03C3/062 ,  C03C3/087 ,  C03C3/12 ,  C03C8/02 ,  C03C8/24

CPC分类号： C04B37/00 ,  B23K1/0008 ,  B23K1/19 ,  B23K1/20 ,  B23K35/30 ,  B23K35/36 ,  C03C3/062 ,  C03C3/087 ,  C03C3/125 ,  C03C8/02 ,  C03C8/24 ,  C04B37/005 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6583 ,  C04B2235/96 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/09 ,  C04B2237/095 ,  C04B2237/10 ,  C04B2237/16 ,  C04B2237/365 ,  C04B2237/38 ,  C04B2237/55 ,  C04B2237/704 ,  C04B2237/72 ,  C04B2237/82 ,  Y10T156/10 ,  Y10T403/479

摘要： A method is described for assembling at least two parts made of silicon carbide based materials by non-reactive brazing in an oxidizing atmosphere, each of the parts comprising a surface to be assembled, wherein the parts are placed in contact with a non-reactive brazing composition, the assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient for completely or at least partially melting the brazing composition, or rendering the brazing composition viscous, and the parts and the brazing composition are cooled so as to form, after cooling the latter to ambient temperature, a moderately refractory joint. The non-reactive brazing composition is a composition A consisting of silica (SiO2), alumina (Al2O3), and calcium oxide (CaO), or a composition B consisting of alumina (Al2O3), calcium oxide (CaO), and magnesium oxide (MgO), and, before heating the assembly formed by the parts and the brazing composition to the brazing temperature, a supply of silicon in a non-oxidized form is carried out on the surfaces to be assembled of the parts to be assembled, and/or on the surface layers comprising the surfaces to be assembled of the parts to be assembled, and/or in the brazing composition.

公开(公告)号：US09773744B2

公开(公告)日：2017-09-26

申请号：US13181111

申请日：2011-07-12

申请人： Reiner Willeke ,  Sören Zenner

发明人： Reiner Willeke ,  Sören Zenner

IPC分类号： H01L21/20 ,  H01L23/00 ,  B23K1/00 ,  B23K1/008 ,  B23K1/20 ,  B23K101/42

CPC分类号： H01L24/11 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/206 ,  B23K2101/42 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/849 ,  H01L2924/00 ,  H01L2224/05552

摘要： Generally, the subject matter disclosed herein relates to methods for forming modern sophisticated semiconductor devices, and more specifically, methods wherein substantially lead-free solder bumps may be formed above a contact layer of a semiconductor chip. One illustrative method disclosed herein includes forming a solder bump above a metallization layer of a semiconductor device, removing an oxide film from a surface of the solder bump, and, after removing the oxide film, performing a solder bump reflow process in a reducing ambient to reflow the solder bump.