公开(公告)号：US5108935A

公开(公告)日：1992-04-28

申请号：US614775

申请日：1990-11-16

Applicant: Mark S. Rodder

Inventor： Mark S. Rodder

IPC: H01L21/336 ,  H01L29/167

CPC classification number: H01L29/66659 ,  H01L29/167 ,  Y10S438/918

Abstract: This invention discloses a method for reducing hot carriers in a transistor structure by means of increasing the scattering rate of the carriers. The increased scattering rate is accomplished by introducing scattering sites comprising of non-conventional dopants, an element which is not boron, phosphorous, or arsenic, into the base or channel region of a transistor.

Abstract translation: 本发明公开了一种通过增加载流子的散射速度来减少晶体管结构中的热载流子的方法。 增加的散射率通过将包含非常规掺杂剂的散射位置（不是硼，磷或砷的元素）引入晶体管的基极或沟道区来实现。

公开(公告)号：US4685979A

公开(公告)日：1987-08-11

申请号：US636408

申请日：1984-07-31

Applicant: Jun-ichi Nishizawa

Inventor： Jun-ichi Nishizawa

IPC: C30B19/04 ,  C30B31/02 ,  H01L21/208 ,  H01L21/368 ,  H01L21/383 ,  H01L33/28 ,  H01L33/56 ,  H01L21/388

CPC classification number: H01L33/28 ,  C30B19/04 ,  C30B29/48 ,  C30B31/02 ,  H01L21/02409 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/383 ,  H01L33/005 ,  H01L33/0083 ,  Y10S117/906 ,  Y10S438/918

Abstract: A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal substrate of n type from a melt of a crystal-constituting Group VI element other than Te; forming a crystal temperature difference in the melt which applying a vapor pressure of the Group VI element onto the melt; forming, on the substrate, a semiconductor region of p type by diffusing an acceptor impurity into the n type crystal under a predetermined vapor pressure of the constituent Group VI element. Thus, it becomes possible to provide light-emitting diodes emitting green, blue-green or violet color region if ZnSe crystals are used.

Abstract translation: 通过以下方法制造具有在II-VI族化合物半导体晶体中形成的单晶pn结的半导体器件的方法：通过从构成晶体的VI族元素的熔体生长n型II-VI族化合物半导体晶体衬底 除了Te; 在熔融物中形成将VI族元素的蒸气压施加到熔体上的晶体温度差; 在基板上形成p型半导体区域，在第VI族元素的预定蒸气压下将受主杂质扩散到n型晶体中。 因此，如果使用ZnSe晶体，则可以提供发出绿色，蓝绿色或紫色区域的发光二极管。

公开(公告)号：US4675985A

公开(公告)日：1987-06-30

申请号：US568034

申请日：1984-01-04

Applicant: Junichi Goto

Inventor： Junichi Goto

IPC: H01L21/52 ,  H01L21/58 ,  H01L23/556 ,  H01L27/10 ,  H01L23/28 ,  H01L23/30

CPC classification number: H01L24/83 ,  H01L23/556 ,  H01L24/33 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y10S438/918

Abstract: In a method for manufacturing a semiconductor memory device, a semiconductor chip and an adhesive tape having an adhesive layer are prepared. The adhesive layer comprises a polyamic acid intermediate derived for example from a pyromellitic dianhydride and a diamine. The adhesive tape is pressed onto the semiconductor chip at a temperature of from about 250.degree. C. to about 400.degree. C. for a predetermined time period such as 2 to 5 sec.

Abstract translation: 在制造半导体存储器件的方法中，制备了具有粘合剂层的半导体芯片和粘合带。 粘合层包含衍生自例如均苯四酸二酐和二胺的聚酰胺酸中间体。 将粘合带在约250℃至约400℃的温度下压制到半导体芯片上一段预定的时间，例如2至5秒。

公开(公告)号：US4660208A

公开(公告)日：1987-04-21

申请号：US621071

申请日：1984-06-15

Applicant: Wilbur D. Johnston, Jr. ,  Judith A. Long ,  Daniel P. Wilt

Inventor： Wilbur D. Johnston, Jr. ,  Judith A. Long ,  Daniel P. Wilt

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/24 ,  H01S5/00 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

CPC classification number: H01L33/24 ,  H01L33/0025 ,  H01S5/24 ,  H01S5/2237 ,  Y10S438/918

Abstract: High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

Abstract translation: 使用高电阻率Fe掺杂InP的MOCVD层来限制电流流过各种器件如CSBH和DCPBH激光器的有源区域。

公开(公告)号：US4619718A

公开(公告)日：1986-10-28

申请号：US628974

申请日：1984-07-10

Applicant: Jun-ichi Nishizawa

Inventor： Jun-ichi Nishizawa

IPC: C30B19/04 ,  C30B31/02 ,  H01L21/208 ,  H01L21/368 ,  H01L21/383 ,  H01L33/28 ,  H01L33/56 ,  H01L21/388

CPC classification number: H01L33/28 ,  C30B19/04 ,  C30B29/48 ,  C30B31/02 ,  H01L21/02409 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/383 ,  H01L33/005 ,  H01L33/0083 ,  Y10S117/906 ,  Y10S438/918

Abstract: A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI element. Thus, the concentration of vacancies and other defects acting as donor is reduced as compared with the concentration of the p type impurity to be introduced. This invention is suitable for producing light-emitting diodes emitting a light of short-wave lengths.

Abstract translation: 通过使用通过液晶生长方法制备的II-VI族化合物半导体晶体的方法，该晶体组成半导体晶体是使用晶体构成的VI族元素的受控蒸气压下的温度差技术制造的。 因此，与引入的p型杂质的浓度相比，作为供体的空位和其他缺陷的浓度降低。 本发明适用于制造发射短波长的发光二极管。

公开(公告)号：US4105479A

公开(公告)日：1978-08-08

申请号：US875266

申请日：1978-02-06

Applicant: Eric S. Johnson ,  Joseph L. Schmit

Inventor： Eric S. Johnson ,  Joseph L. Schmit

IPC: H01L21/383 ,  H01L31/0296 ,  H01L31/103 ,  H01L21/04

CPC classification number: H01L31/02963 ,  H01L21/383 ,  H01L31/1032 ,  Y10S420/903 ,  Y10S438/918 ,  Y10S438/971

Abstract: Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclosed are PN junctions formed using this donor material. A method of introducing the donor material is additionally disclosed.

公开(公告)号：US4062034A

公开(公告)日：1977-12-06

申请号：US679846

申请日：1976-04-23

Applicant: Takeshi Matsushita ,  Hisao Hayashi ,  Mitsuru Shibasaki

Inventor： Takeshi Matsushita ,  Hisao Hayashi ,  Mitsuru Shibasaki

IPC: H01L21/00 ,  H01L21/205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/331 ,  H01L21/337 ,  H01L23/29 ,  H01L23/31 ,  H01L27/06 ,  H01L29/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165 ,  H01L29/43 ,  H01L29/45 ,  H01L29/73 ,  H01L29/737 ,  H01L29/80 ,  H01L29/808 ,  H01L29/161

CPC classification number: H01L29/802 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/314 ,  H01L21/31612 ,  H01L23/298 ,  H01L23/3171 ,  H01L23/3192 ,  H01L27/0623 ,  H01L29/04 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/165 ,  H01L29/432 ,  H01L29/456 ,  H01L29/73 ,  H01L29/7371 ,  H01L29/7375 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S148/113 ,  Y10S148/118 ,  Y10S148/122 ,  Y10S438/918

Abstract: A semiconductor device comprising a silicon substrate with an oxygen doped polycrystalline or amorphous silicon layer formed on the substrate so as to form a hetero junction therewith. A transistor formed according to the invention has an emitter-base hetero junction and has a high current gain.

Abstract translation: 一种半导体器件，包括在衬底上形成有氧掺杂多晶或非晶硅层的硅衬底，以便与其形成异质结。 根据本发明形成的晶体管具有发射极 - 基极异质结并具有高电流增益。

公开(公告)号：US3975756A

公开(公告)日：1976-08-17

申请号：US484038

申请日：1974-06-28

Applicant: Daniel J. Lanigan ,  Marvin M. Cohen

Inventor： Daniel J. Lanigan ,  Marvin M. Cohen

IPC: H01L21/24 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/103

CPC classification number: H01L21/24 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/50 ,  Y10S438/918

Abstract: A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a p-n junction.

Abstract translation: 为了形成p-n结，通过使用钆作为锗 - 锗共晶体的锗晶体中的掺杂剂来形成新的光敏电流限制固态二极管。

公开(公告)号：US3856586A

公开(公告)日：1974-12-24

申请号：US39545573

申请日：1973-09-10

Applicant: LICENTIA GMBH

Inventor： BORCHERT E ,  SOMMER K

IPC: H01L21/22 ,  H01L21/00 ,  H01L21/329 ,  H01L29/00 ,  H01L29/74 ,  H01L7/44

CPC classification number: H01L21/00 ,  H01L29/00 ,  Y10S148/151 ,  Y10S438/918 ,  Y10S438/919

Abstract: A method for producing a semiconductor device in a semiconductor wafer, which is initially substantially undoped, the method including initially forming in outer areas of the semiconductor wafer the semiconductor zones necessary for creating the device, in such a manner that an interior zone of the wafer is left substantially undoped, and subsequently doping the wafer with a doping material which is only slightly soluble in the material of the semiconductor wafer and has a high diffusion speed. In this manner the interior zone is given a substantially homogeneous doping concentration.

Abstract translation: 一种在半导体晶片中制造半导体器件的方法，该半导体器件最初基本上未被掺杂，该方法包括首先在半导体晶片的外部区域中形成半导体区域以形成该器件所需的半导体区域，使得晶片的内部区域 基本上未掺杂，然后用仅仅微溶于半导体晶片的材料的掺杂材料掺杂晶片并且具有高扩散速度。 以这种方式，内部区域具有基本均匀的掺杂浓度。

公开(公告)号：US3751309A

公开(公告)日：1973-08-07

申请号：US3751309D

申请日：1971-03-29

Applicant: BELL TELEPHONE LABOR INC

Inventor： DERICK L ,  JORDAN A ,  VERLEUR H

IPC: C30B15/00 ,  C30B15/04 ,  H01L21/208 ,  H01L33/00 ,  H01L7/38 ,  H01L7/40

CPC classification number: C30B15/00 ,  C30B15/04 ,  C30B29/44 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/00 ,  Y10S148/065 ,  Y10S148/119 ,  Y10S252/95 ,  Y10S438/918

Abstract: Zn(PO3)2, as a low melting point glass, is used as the zinc and oxygen doping source in the growth of the p-type region of gallium phosphide electroluminescent diode material. It is a relatively low vapor pressure liquid above 872*C permitting intimate contact with the GaP containing melt and rapid solution therein during crystal pulling or liquid phase epitaxial crystal growth.

Abstract translation: 在磷化镓电致发光二极管材料的p型区域的生长中，使用作为低熔点玻璃的Zn（PO3）2作为锌和氧的掺杂源。 高于872℃的相对较低的蒸汽压液体可以在晶体拉制或液相外延晶体生长期间与含GaP的熔体和快速溶液紧密接触。