知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

147 条记录 (耗时 0.025 秒)

    Carbon-doped silicon single crystal wafer and method for manufacturing the same
    1.
    发明授权
    Carbon-doped silicon single crystal wafer and method for manufacturing the same 有权

    公开(公告)号：US11761118B2

    公开(公告)日：2023-09-19

    申请号：US17619516

    申请日：2020-06-30

    申请人： SHIN-ETSU HANDOTAI CO., LTD.

    发明人： Weifeng Qu ,  Shizuo Igawa ,  Ken Sunakawa

    IPC分类号： B32B9/00 ,  C30B31/02 ,  C30B29/06 ,  C30B33/02 ,  H01L21/02

    CPC分类号： C30B31/02 ,  C30B29/06 ,  C30B33/02 ,  H01L21/0201

    摘要： A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

    SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL WAFER
    3.
    发明申请
    SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL WAFER 审中-公开
    硅外延晶片及其制造方法

    公开(公告)号：US20160126318A1

    公开(公告)日：2016-05-05

    申请号：US14785720

    申请日：2014-03-28

    申请人： SHIN-ETSU HANDOTAI CO., LTD.

    发明人： Masahiro SAKURADA

    IPC分类号： H01L29/167 ,  C30B31/02 ,  C30B29/68 ,  C30B25/20 ,  C30B29/06

    CPC分类号： H01L29/167 ,  C30B15/00 ,  C30B25/02 ,  C30B25/20 ,  C30B29/06 ,  C30B29/68 ,  C30B31/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/3225

    摘要： A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot grown by the CZ method so as to have a carbon concentration ranging from 3×1016 to 2×1017 atoms/cm3, a first intermediate epitaxial layer doped with a dopant, and an epitaxial layer of a device forming region stacked on the first intermediate epitaxial layer, and to a method of producing this wafer. Also providing an industrially excellent silicon epitaxial wafer that is produced with a silicon substrate doped with carbon and used as a semiconductor device substrate such as a memory, a logic, or a solid-state image sensor, and a method of producing this silicon epitaxial wafer.

    摘要翻译： 一种硅外延晶片，包括：通过从由CZ法生长的硅单晶锭切割而制成的硅衬底上的第二中间外延层，其碳浓度范围为3×1016至2×1017原子/ cm3， 掺杂有掺杂剂的第一中间外延层和堆叠在第一中间外延层上的器件形成区的外延层以及制造该晶片的方法。 还提供了一种工业上优异的硅外延晶片，该硅外延晶片由掺杂有碳的硅衬底制成并用作诸如存储器，逻辑或固态图像传感器的半导体器件衬底，以及制造该硅外延晶片的方法 。

    Method for contact diffusion of impurities into diamond and other crystalline structures and products
    7.
    发明授权
    Method for contact diffusion of impurities into diamond and other crystalline structures and products 失效
    金属和其他晶体结构和产品中杂质接触扩散的方法

    公开(公告)号：US06527854B1

    公开(公告)日：2003-03-04

    申请号：US09719736

    申请日：2000-12-14

    申请人： Mark A. Prelas ,  Fariborz Golshani ,  Robert V. Tompson, Jr.

    发明人： Mark A. Prelas ,  Fariborz Golshani ,  Robert V. Tompson, Jr.

    IPC分类号： C30B2508

    CPC分类号： C30B31/02 ,  C30B29/04 ,  C30B31/00

    摘要： A low free energy method for more rapidly diffusing an impurity as exemplified by boron, into a natural or synthetic diamond or other crystalline element in powdered or granular form, without degradation of the crystalline structure. The present method includes the steps of providing a mixture of the diamond or other crystalline element and the impurity in a solid phase; treating the mixture to bring the impurity into conforming contact with the outer surface of the crystalline element; and heating the mixture to a temperature between about 200° C. and about 2000° C. As an example, a diamond is disclosed having boron as an impurity diffused into the crystalline structure thereof by the present method, at a ratio of from about 0.1 part of the impurity per 1 million parts of the diamond to about 600 parts of the impurity per 1 million parts of the diamond.

    摘要翻译： 一种低自由能方法，用于将如硼例示的杂质更快地扩散成粉末状或颗粒状的天然或合成金刚石或其它结晶元素，而不会降解晶体结构。 本发明的方法包括以下步骤：提供金刚石或其它结晶元素与固相的杂质的混合物; 处理混合物以使杂质与结晶元件的外表面形成一致的接触; 并将混合物加热至约200℃至约2000℃的温度。作为示例，公开了通过本方法将硼作为杂质扩散到其结晶结构中的金刚石以约0.1的比例 部分杂质每百万份钻石至约600份杂质每百万份钻石。

    Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing
    8.
    发明授权
    Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing 失效
    使用固体掺杂剂源和快速热处理来掺杂硅晶片的方法和装置

    公开(公告)号：US5550082A

    公开(公告)日：1996-08-27

    申请号：US414031

    申请日：1995-03-30

    申请人： John C. Wolfe ,  Wanda Zagozdzon-Wosik

    发明人： John C. Wolfe ,  Wanda Zagozdzon-Wosik

    IPC分类号： C30B31/02 ,  H01L21/223

    CPC分类号： H01L21/223 ,  C30B31/02

    摘要： The present invention is, in part, a new process for dopant diffusion, both p-type (e.g., B) and n-type (e.g., P, As), into silicon wafers, using rapid thermal processing (RTP). It uses a surface layer of a new planar dopant as an active dopant source. Such a source is produced using either a rigid holder wafer with a spin-on dopant or CVD doped oxides deposited on its surface, or such a source is high pressure planar solid source having a surface that has been activated by dry etching or sputtering etching. Such a dopant source is placed in proximity to a processed silicon wafer in such a manner that its active surface is facing the surface of the silicon wafer during RTP. Both the silicon wafer and the dopant source are heated by lamps emitting light causing transport of dopant from the dopant source to the silicon surface. The dopant source may be produced using either silicon wafers, quartz or ceramic plates or planar solid diffusion sources which are commercially available in a form of solid discs containing compounds containing various dopant atoms (e.g., B, P, and As).

    摘要翻译： 本发明部分地是使用快速热处理（RTP）将p型（例如B）和n型（例如P，As）掺杂剂扩散到硅晶片中的新方法。 它使用新的平面掺杂剂的表面层作为有源掺杂剂源。 这样的源使用具有自旋掺杂剂的刚性保持器晶片或沉积在其表面上的CVD掺杂的氧化物来生产，或者这种源是具有已经通过干蚀刻或溅射蚀刻激活的表面的高压平面固体源。 这样的掺杂剂源以这样的方式放置在处理的硅晶片附近，使得其活性表面在RTP期间面向硅晶片的表面。 硅晶片和掺杂剂源都被发射光的灯加热，导致掺杂剂从掺杂剂源传输到硅表面。 可以使用硅晶片，石英或陶瓷板或平面固体扩散源来制造掺杂剂源，所述平板固体扩散源可以包含含有各种掺杂剂原子的化合物（例如B，P和As）的固体盘形式商购。

    Optical materials from intercalation of polyvalent cations in beta double prime alumina
    9.
    发明授权
    Optical materials from intercalation of polyvalent cations in beta double prime alumina 失效
    在β双原子氧化铝中插入多价阳离子的光学材料

    公开(公告)号：US4664849A

    公开(公告)日：1987-05-12

    申请号：US509237

    申请日：1983-06-29

    申请人： Gregory C. Farrington ,  Bruce S. Dunn

    发明人： Gregory C. Farrington ,  Bruce S. Dunn

    IPC分类号： C01G49/00 ,  C01F7/02 ,  C01F7/04 ,  C01F17/00 ,  C01G15/00 ,  C09K11/08 ,  C09K11/64 ,  C30B29/20 ,  C30B29/22 ,  C30B31/02 ,  C30B31/04 ,  C30B31/08 ,  G02B1/02 ,  H01S3/16

    CPC分类号： C30B31/04 ,  C30B29/22 ,  C30B31/02 ,  C30B31/08

    摘要： Beta double prime alumina is provided having a sensible amount of at least one polyvalent cationic species intercalated therein. In accordance with a preferred embodiment, such beta double prime alumina is provided having trivalent and/or tetravalent cationic species intercalated therein, especially species derived from the lanthanide and actinide series of elements. Certain of the foregoing materials exhibit phosphorescence or fluorescence, and some are believed to be capable of producing laser emission upon suitable irradiation.Methods for modifying beta double prime aluminas comprising contacting crystals of the aluminas with polyvalent cation-containing salts such as in the molten state or in the gaseous state are also provided. Laser and other optical devies are disclosed employing the modified beta double prime aluminas of this invention.

    摘要翻译： 提供具有显微量的至少一种多价阳离子物质插入其中的β双原子氧化铝。 根据优选的实施方案，提供这样的β双原子氧化铝，其具有插入其中的三价和/或四价阳离子物质，特别是衍生自镧系元素和锕系元素系列的物质。 上述某些材料表现出磷光或荧光，有些被认为能够在合适的照射下产生激光发射。 还提供了修饰β双原子氧化铝的方法，包括使氧化铝的晶体与多价阳离子盐如熔融状态或气态接触。 公开了使用本发明的改性的β双氧化铝的激光和其它光学器件。

    Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB.sub.6 solid source
    10.
    发明授权
    Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB.sub.6 solid source 失效
    在用SiB 6固体源掺杂硅体之前，从硅体中除去硼硅酸盐和富硼氧化物的方法

    公开(公告)号：US4313773A

    公开(公告)日：1982-02-02

    申请号：US212304

    申请日：1980-12-03

    申请人： Marian Briska ,  Gert Metzger ,  Klaus P. Thiel

    发明人： Marian Briska ,  Gert Metzger ,  Klaus P. Thiel

    IPC分类号： C03C15/00 ,  C30B31/02 ,  H01L21/22 ,  H01L21/223 ,  H01L21/306 ,  H01L21/311 ,  H01L21/225

    CPC分类号： C30B31/02 ,  H01L21/223 ,  H01L21/31111

    摘要： A method for doping silicon bodies by the diffusion of boron into the bodies is described. The method is an improvement of processes where the silicon bodies are exposed in a first heating process to a gas mixture containing a predetermined boron quantity and boron and oxygen in a predetermined quantitative ratio and a second heating process is used to drive the boron into the silicon. In the method, a borosilicate glass layer and a boron-rich silicon dioxide layer are removed by first immersing the silicon body in hydrofluoric acid diluted with water and subsequently in an aqueous sulfuric acid/potassium permanganate solution.

    摘要翻译： 描述了通过硼扩散到体内来掺杂硅体的方法。 该方法是将硅体在第一加热过程中暴露于含有预定硼量的气体混合物和硼和氧以预定量比的方法的改进，并且使用第二加热方法将硼驱入硅 。 在该方法中，通过首先将硅体浸入用水稀释的氢氟酸中，然后在硫酸/高锰酸钾水溶液中，除去硼硅酸盐玻璃层和富硼二氧化硅层。