公开(公告)号：US09589958B1

公开(公告)日：2017-03-07

申请号：US15004063

申请日：2016-01-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Sivananda K. Kanakasabapathy ,  Fee Li Lie ,  Eric Miller ,  Stuart A. Sieg

IPC: H01L21/00 ,  H01L27/092 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/3065 ,  H01L29/16 ,  H01L29/161 ,  H01L29/201 ,  H01L21/8252 ,  H01L21/311

CPC classification number: H01L27/0886 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L27/0924 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/201 ,  H01L29/6653 ,  H01L29/66545

Abstract: A method is disclosed which cuts hard mask fins thinner than the target fin critical dimension and then enlarges the dimension of the fin hard mask critical dimension to meet the target fin critical dimension.

Abstract translation: 公开了一种切割比目标鳍关键尺寸更薄的硬掩模翅片的方法，然后扩大翅片硬掩模临界尺寸以满足目标鳍临界尺寸。

公开(公告)号：US20170054024A1

公开(公告)日：2017-02-23

申请号：US14984215

申请日：2015-12-30

Applicant: International Business Machines Corporation

Inventor： Bruce B. Doris ,  Hong He ,  Sivananda K. Kanakasabapathy ,  Gauri Karve ,  Fee Li Lie ,  Stuart A. Sieg

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/06 ,  H01L29/161

CPC classification number: H01L21/845 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/76213 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for forming a fin on a substrate comprises patterning and etching a layer of a first semiconductor material to define a strained fin, depositing a layer of a second semiconductor material over the fin, the second semiconductor material operative to maintain the a strain in the strained fin, etching to remove a portion of the second semiconductor material to define a cavity that exposes a portion of the fin, etching to remove the exposed portion of the fin such that the fin is divided into a first segment and a second segment, and depositing an insulator material in the cavity, the insulator material contacting the first segment of the fin and the second segment of the fin.

公开(公告)号：US20170053942A1

公开(公告)日：2017-02-23

申请号：US14833356

申请日：2015-08-24

Applicant: International Business Machines Corporation

Inventor： Bruce B. Doris ,  Hong He ,  Sivananda K. Kanakasabapathy ,  Gauri Karve ,  Fee Li Lie ,  Stuart A. Sieg

IPC: H01L27/12 ,  H01L29/16 ,  H01L29/06 ,  H01L29/161 ,  H01L29/78

CPC classification number: H01L21/845 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/76213 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7846 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for forming a fin on a substrate comprises patterning and etching a layer of a first semiconductor material to define a strained fin, depositing a layer of a second semiconductor material over the fin, the second semiconductor material operative to maintain the a strain in the strained fin, etching to remove a portion of the second semiconductor material to define a cavity that exposes a portion of the fin, etching to remove the exposed portion of the fin such that the fin is divided into a first segment and a second segment, and depositing an insulator material in the cavity, the insulator material contacting the first segment of the fin and the second segment of the fin.

公开(公告)号：US20160358861A1

公开(公告)日：2016-12-08

申请号：US15239166

申请日：2016-08-17

Applicant: International Business Machines Corporation

Inventor： David J. Conklin ,  Allen H. Gabor ,  Sivananda K. Kanakasabapathy ,  Byeong Y. Kim ,  Fee Li Lie ,  Stuart A. Sieg

IPC: H01L23/544 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/708 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: Methods of forming a registration mark such as an alignment mark or overlay mark during formation of sub-lithographic structures are provided. Methods may include forming a plurality of mandrels over a hard mask over a semiconductor layer, each mandrel including a spacer adjacent thereto. At least one mandrel is selected of the plurality of mandrels and a mask is formed over the at least one selected mandrel. The plurality of mandrels are removed leaving the spacers, the mask preventing removal of the at least one selected mandrel. The mask is removed. A first etching patterns the sub-lithographic structures and the registration mark into the hard mask using the spacers as a pattern of the sub-lithographic structure and the at least one selected mandrel and adjacent spacer for the registration mark. A second etching forms the sub-lithographic structures in the semiconductor layer using the patterned hard mask and to form the registration mark in the semiconductor layer using the at least one selected mandrel and the patterned hard mask.

公开(公告)号：US20160247766A1

公开(公告)日：2016-08-25

申请号：US14630715

申请日：2015-02-25

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David J. Conklin ,  Allen H. Gabor ,  Sivananda K. Kanakasabapathy ,  Byeong Y. Kim ,  Fee Li Lie ,  Stuart A. Sieg

IPC: H01L23/544 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/708 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: Methods of forming a registration mark such as an alignment mark or overlay mark during formation of sub-lithographic structures are provided. Methods may include forming a plurality of mandrels over a hard mask over a semiconductor layer, each mandrel including a spacer adjacent thereto. At least one mandrel is selected of the plurality of mandrels and a mask is formed over the at least one selected mandrel. The plurality of mandrels are removed leaving the spacers, the mask preventing removal of the at least one selected mandrel. The mask is removed. A first etching patterns the sub-lithographic structures and the registration mark into the hard mask using the spacers as a pattern of the sub-lithographic structure and the at least one selected mandrel and adjacent spacer for the registration mark. A second etching forms the sub-lithographic structures in the semiconductor layer using the patterned hard mask and to form the registration mark in the semiconductor layer using the at least one selected mandrel and the patterned hard mask.

Abstract translation: 提供了在形成亚光刻结构期间形成诸如对准标记或重叠标记的对准标记的方法。 方法可以包括在半导体层上的硬掩模上形成多个心轴，每个心轴包括与其相邻的间隔物。 选择多个心轴中的至少一个心轴，并且在所述至少一个选定心轴上形成掩模。 离开间隔物去除多个心轴，掩模防止去除至少一个选定的心轴。 去除面具。 第一蚀刻使用间隔物作为亚光刻结构的图案和至少一个选定的心轴和用于对准标记的相邻间隔物，将亚光刻结构和对准标记图案化成硬掩模。 第二蚀刻使用图案化的硬掩模在半导体层中形成次光刻结构，并使用至少一个选定的心轴和图案化的硬掩模在半导体层中形成对准标记。

公开(公告)号：US09305845B2

公开(公告)日：2016-04-05

申请号：US14477450

申请日：2014-09-04

Applicant: International Business Machines Corporation

Inventor： Matthew E. Colburn ,  Sivananda K. Kanakasabapathy ,  Fee Li Lie ,  Stuart A. Sieg

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/30608 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31122 ,  H01L21/32137 ,  H01L21/823431 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/6656 ,  Y10S438/947

Abstract: Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks.

Abstract translation: 提供了用于修改间隔物和/或间隔物之间​​的空间的方法，以使翅片切割掩模能够落在间隔件之间。 具有第一宽度的第一组第二心轴结构形成在相邻的一对第一心轴结构的相对侧壁表面上，并且具有小于第一宽度的第二宽度的第二组第二心轴结构形成在非面对侧壁表面上 的相邻的第一心轴结构对。 移除每个第一心轴结构，并且在第一和第二组第二心轴结构的侧壁表面上形成间隔件。 在相邻的一对第一心轴结构之间的区域中形成合并间隔物。 去除第一和第二组第二心轴结构。 可以利用每个间隔物和合并的间隔物作为蚀刻掩模来图案化一部分底层基底。

公开(公告)号：US20150145065A1

公开(公告)日：2015-05-28

申请号：US14088903

申请日：2013-11-25

Applicant: International Business Machines Corporation

Inventor： Sivananda K. Kanakasabapathy ,  Stuart A. Sieg ,  Theodorus E. Standaert ,  Yunpeng Yin

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L27/0886 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/6681

Abstract: Etching interleaved structures of semiconductor material forming fins of finFETs and local isolation material interposed between the fins is performed alternately and cyclically by alternating etchants cyclically such as by alternating gases during reactive ion etching. Etchants are preferably alternated when one of the semiconductor material and the local isolation material protrudes above the other by a predetermined distance. Since protruding surfaces are etched more rapidly than recessed surfaces, the overall etching process is accelerated and completed in less time such that erosion of other materials to which the etchants are less than optimally selective is reduced and allow improved etching of trenches for improved isolation structures to be formed.

Abstract translation: 通过在反应离子蚀刻期间循环地交替使用蚀刻剂，例如通过交替气体，交替地和周期性地执行鳍状FET的形成鳍状物的半导体材料的蚀刻交错结构和介于散热片之间的局部隔离材料。 优选地，当半导体材料和局部隔离材料之一突出另一个预定距离时，蚀刻剂优选交替。 由于突出表面比凹陷表面更快地被蚀刻，整个蚀刻过程被加速并且在更短的时间内完成，使得蚀刻剂小于最佳选择性的其它材料的侵蚀减少，并且允许改进蚀刻沟槽以改善隔离结构 形成。

公开(公告)号：US10580652B2

公开(公告)日：2020-03-03

申请号：US16058088

申请日：2018-08-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John C. Arnold ,  Anuja E. DeSilva ,  Nelson M. Felix ,  Chi-Chun Liu ,  Yann A. M. Mignot ,  Stuart A. Sieg

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/8234

Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.

公开(公告)号：US20190333774A1

公开(公告)日：2019-10-31

申请号：US16508691

申请日：2019-07-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Sean D. Burns ,  Nelson M. Felix ,  Chi-Chun Liu ,  Yann A.M. Mignot ,  Stuart A. Sieg

IPC: H01L21/308 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/8234 ,  H01L21/033

Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

公开(公告)号：US20190198642A1

公开(公告)日：2019-06-27

申请号：US15850585

申请日：2017-12-21

Applicant: International Business Machines Corporation

Inventor： Christopher J. Waskiewicz ,  Hemanth Jagannathan ,  Yann Mignot ,  Stuart A. Sieg

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/28 ,  H01L29/40 ,  H01L29/78

Abstract: Embodiments of the invention are directed to a method of forming a semiconductor device by forming a channel fin over a substrate, wherein the channel fin includes a plurality of channel fins, wherein a first spacing is defined between adjacent ones of a first set of the plurality of channel fins, wherein a second spacing is defined between adjacent ones of a second set of the plurality of channel fins, wherein the first spacing is not equal to the second spacing. An initial gate structure is formed over the plurality of channels. Formed along sidewalls of the initial gate structure are spacers that each has a predetermined spacer height, wherein a thickness of each of the spacers is insufficient to allow any one of the spacers to fill the first spacing or the second spacing. Portions of the initial gate structure that are not covered by the spacers are removed.