公开(公告)号：US20130154073A1

公开(公告)日：2013-06-20

申请号：US13327032

申请日：2011-12-15

申请人： Harold L. Massie ,  Phillip Celaya ,  David F. Moeller ,  Mark Randol

发明人： Harold L. Massie ,  Phillip Celaya ,  David F. Moeller ,  Mark Randol

IPC分类号： H01L23/495 ,  H01L21/50 ,  H01L21/28

CPC分类号： H01L23/49524 ,  H01L23/3107 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/37147 ,  H01L2224/376 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/84

摘要： In one embodiment, a leadframe for a semiconductor package includes a source connection area for one transistor and a drain connection point for a second transistor, and a common connection for using a connection clip to couple a drain of the first transistor to a source of the second transistor and to the common connection.

摘要翻译： 在一个实施例中，用于半导体封装的引线框架包括用于一个晶体管的源极连接区域和用于第二晶体管的漏极连接点，以及用于使用连接夹将第一晶体管的漏极耦合到第二晶体管的源极的公共连接 第二晶体管和公共连接。

公开(公告)号：US08451621B2

公开(公告)日：2013-05-28

申请号：US12948970

申请日：2010-11-18

申请人： Shutesh Krishnan ,  Soon Wei Wang

发明人： Shutesh Krishnan ,  Soon Wei Wang

IPC分类号： H05K7/00

CPC分类号： H05K7/00 ,  H01L23/3121 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/074 ,  H01L2224/05554 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/32235 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37611 ,  H01L2224/37624 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37647 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40106 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/4103 ,  H01L2224/41052 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49112 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/85423 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  Y10T29/49117 ,  Y10T29/4913 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/84

摘要： A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes stacked semiconductor die. In accordance with embodiments, the semiconductor component includes a substrate having a component receiving area and a plurality of bond pads. A semiconductor chip is attached to the component receiving area. An electrical connector is coupled to the semiconductor chip and the substrate. A second semiconductor chip is mounted or attached to one of the ends of the electrical connector such that this end is positioned between the semiconductor chips. A second electrical connector is coupled between the second semiconductor chip and the substrate. A third semiconductor chip is mounted over or attached to the second electrical connector such that a portion is between the second and third semiconductor chips.

摘要翻译： 半导体部件及半导体部件的制造方法，其特征在于，所述半导体部件具有堆叠的半导体管芯。 根据实施例，半导体部件包括具有部件接收区域和多个接合焊盘的基板。 半导体芯片附接到部件接收区域。 电连接器耦合到半导体芯片和基板。 第二个半导体芯片被安装或连接到电连接器的一个端部，使得该端部位于半导体芯片之间。 第二电连接器耦合在第二半导体芯片和基板之间。 第三半导体芯片安装在第二电连接器上或附着到第二电连接器，使得一部分在第二和第三半导体芯片之间。

公开(公告)号：US20130119907A1

公开(公告)日：2013-05-16

申请号：US13734223

申请日：2013-01-04

申请人： International Rectifier Corporation

发明人： Henning M. Hauenstein ,  Andrea Gorgerino

IPC分类号： H02P6/14

CPC分类号： H01L23/49844 ,  H01L23/492 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/40139 ,  H01L2224/40227 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/84

摘要： According to an exemplary embodiment, a bondwireless power module includes a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device. The bondwireless power module also includes a high side conductive clip connecting a collector of the high side device to a cathode of the high side device, and causing current to traverse through the high side conductive clip to another high side conductive clip in another power module. The bondwireless power module further includes a low side conductive clip connecting an emitter of the low side device to an anode of the low side device, and causing current to traverse through the low side conductive clip to another low side conductive clip in the another power module. The bondwireless power module can be a motor drive inverter module.

摘要翻译： 根据示例性实施例，无电线电源模块包括将高侧器件的发射极/阳极节点耦合到低侧器件的集电极/阴极节点的公共输出焊盘。 接合无线电源模块还包括将高侧器件的集电极连接到高侧器件的阴极的高侧导电夹，并使电流穿过高侧导电夹子穿过另一个功率模块中的另一个高侧导电夹。 无接线电源模块还包括将低侧器件的发射极连接到低侧器件的阳极的低侧导电夹子，并使电流穿过低侧导电夹子穿过另一功率模块中的另一低侧导电夹 。 无键电源模块可以是电机驱动逆变器模块。

公开(公告)号：US08431993B2

公开(公告)日：2013-04-30

申请号：US13289918

申请日：2011-11-04

申请人： Yan Xun Xue ,  Jun Lu ,  Lei Shi ,  Liang Zhao

发明人： Yan Xun Xue ,  Jun Lu ,  Lei Shi ,  Liang Zhao

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L31/119 ,  H01L31/113

CPC分类号： H01L24/73 ,  H01L21/4842 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49551 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/371 ,  H01L2224/37599 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83101 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method is disclosed for attaching an interconnection plate to semiconductor die within leadframe package. A base leadframe is provided with die pad for attaching semiconductor die. An interconnection plate is provided for attachment to the base leadframe and semiconductor die. Add a base registration feature onto base leadframe and a plate registration feature onto interconnection plate with the registration features designed to match each other such that, upon approach of the interconnection plate to base leadframe, the two registration features would engage and guide each other causing concomitant self-aligned attachment of the interconnection plate to base leadframe. Next, the interconnection plate is brought into close approach to base leadframe to engage and lock plate registration feature to base registration feature hence completing attachment of the interconnection plate to semiconductor die and forming a leadframe package.

摘要翻译： 公开了一种将引线框封装内的互连板连接到半导体管芯的方法。 基座引线框架设置有用于附接半导体管芯的管芯焊盘。 提供互连板，用于附接到基底引线框架和半导体管芯。 将基准注册功能添加到基准引线框架和板对准特征到互连板上，其中配准特征被设计成彼此匹配，使得在互连板到基底引线框架的接近时，两个配准特征将相互接合并引导彼此引起伴随 互连板与基座引线框架的自对准连接。 接下来，使互连板靠近基底引线框架以将板对准特征接合并锁定到基准对准特征，从而完成互连板连接到半导体管芯并形成引线框封装。

公开(公告)号：US08378467B2

公开(公告)日：2013-02-19

申请号：US12934018

申请日：2009-09-08

申请人： Chie Fujioka ,  Toshiyuki Yokoe ,  Daichi Kumano

发明人： Chie Fujioka ,  Toshiyuki Yokoe ,  Daichi Kumano

IPC分类号： H01L23/495

CPC分类号： H01L24/40 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/16 ,  H01L24/29 ,  H01L24/37 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2224/85375 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2924/00012

摘要： Retaining regions 310a and 310b are added to a pad shaped portion 303a of leads and a die pad 302 that are electrically connected via a conductive ribbon 309, so that during the bonding of the ribbon, strong ultrasonic waves can be applied in a state in which the retaining regions 310a and 310b are pressed and fixed. It is therefore possible to reduce a resistance at a joint while firmly bonding the conductive ribbon 309. Further, the bonding strength of the conductive ribbon 309 increases and thus it is possible to eliminate the need for stacking the conductive ribbons 309 and easily reduce a stress caused by ultrasonic waves on a semiconductor chip 306.

摘要翻译： 保持区域310a和310b被添加到通过导电带309电连接的引线和芯片焊盘302的焊盘形部分303a，使得在带状物的接合期间可以在其中施加强超声波 保持区域310a和310b被按压和固定。 因此，可以在牢固地接合导电带309的同时降低接头处的电阻。此外，导电带309的接合强度增加，因此可以消除堆叠导电带309的需要并且容易地减小应力 由半导体芯片306上的超声波引起的。

公开(公告)号：US20130027113A1

公开(公告)日：2013-01-31

申请号：US13191891

申请日：2011-07-27

申请人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel

发明人： Ralf Otremba ,  Josef Hoeglauer ,  Juergen Schredl ,  Xaver Schloegel

IPC分类号： H03K17/56 ,  H01L25/07 ,  H01L21/98 ,  H01L23/538

CPC分类号： H01L24/73 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/2732 ,  H01L2224/2745 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/4866 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/4876 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/01028 ,  H01L2224/27 ,  H01L2924/0105 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/01023 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/01005

摘要： A semiconductor chip includes a power transistor circuit with a plurality of active transistor cells. A first load electrode and a control electrode are arranged on a first face of the semiconductor chip, wherein the first load electrode includes a first metal layer. A second load electrode is arranged on a second face of the semiconductor chip. A second metal layer is arranged over the first metal layer, wherein the second metal layer is electrically insulated from the power transistor circuit and the second metal layer is arranged over an area of the power transistor circuit that comprises at least one of the plurality of active transistor cells.

摘要翻译： 半导体芯片包括具有多个有源晶体管单元的功率晶体管电路。 第一负载电极和控制电极设置在半导体芯片的第一面上，其中第一负载电极包括第一金属层。 第二负载电极设置在半导体芯片的第二面上。 第二金属层布置在第一金属层上，其中第二金属层与功率晶体管电路电绝缘，并且第二金属层布置在功率晶体管电路的包括多个活性物质中的至少一个的区域 晶体管单元。

公开(公告)号：US20130026490A1

公开(公告)日：2013-01-31

申请号：US13194585

申请日：2011-07-29

申请人： Victor H. Cruz ,  David Francis Courtney

发明人： Victor H. Cruz ,  David Francis Courtney

IPC分类号： H01L21/56 ,  H01L29/20 ,  H01L29/12 ,  H01L23/495

CPC分类号： H01L23/291 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/32245 ,  H01L2224/37184 ,  H01L2224/37639 ,  H01L2224/37655 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48699 ,  H01L2224/48739 ,  H01L2224/48755 ,  H01L2224/83439 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/097 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/17738 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/201 ,  H01L2924/20111 ,  H01L2224/84 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2924/01005

摘要： A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.

摘要翻译： 用于非轴向电子器件的高温非空腔封装是使用玻璃陶瓷化合物设计的，其能够在高于300-400℃的温度下连续组装和操作。金属钎焊，例如银，银胶体或 铜，用于连接半导体管芯，引线框架和连接器。 这些部件也是热匹配的，使得封装可以在高温下连续地组装和操作，并且可承受极端的温度变化，而不会发生键失效或者由于热失配引起的封装破裂。

公开(公告)号：US08350376B2

公开(公告)日：2013-01-08

申请号：US13088573

申请日：2011-04-18

申请人： Henning M. Hauenstein ,  Andrea Gorgerino

发明人： Henning M. Hauenstein ,  Andrea Gorgerino

IPC分类号： H01L23/52 ,  H01L23/02

CPC分类号： H01L23/49844 ,  H01L23/492 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/40139 ,  H01L2224/40227 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/84

摘要： According to an exemplary embodiment, a bondwireless power module includes a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device. The bondwireless power module also includes a high side conductive clip connecting a collector of the high side device to a cathode of the high side device, and causing current to traverse through the high side conductive clip to another high side conductive clip in another power module. The bondwireless power module further includes a low side conductive clip connecting an emitter of the low side device to an anode of the low side device, and causing current to traverse through the low side conductive clip to another low side conductive clip in the another power module. The bondwireless power module can be a motor drive inverter module.

摘要翻译： 根据示例性实施例，无电线电源模块包括将高侧器件的发射极/阳极节点耦合到低侧器件的集电极/阴极节点的公共输出焊盘。 接合无线电源模块还包括将高侧器件的集电极连接到高侧器件的阴极的高侧导电夹，并使电流穿过高侧导电夹子穿过另一个功率模块中的另一个高侧导电夹。 无接线电源模块还包括将低侧器件的发射极连接到低侧器件的阳极的低侧导电夹子，并使电流穿过低侧导电夹子穿过另一功率模块中的另一低侧导电夹 。 无键电源模块可以是电机驱动逆变器模块。

公开(公告)号：US20120322207A1

公开(公告)日：2012-12-20

申请号：US13545225

申请日：2012-07-10

申请人： Xiaotian Zhang ,  Jun Lu

发明人： Xiaotian Zhang ,  Jun Lu

IPC分类号： H01L21/60

CPC分类号： H01L24/37 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/8585 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： This invention discloses a semiconductor package with adhesive material pre-printed on the lead frame and chip, and the manufacturing method. The adhesive material is applied onto the chip carrier and the pin of the lead frame and also on the front electrode of the semiconductor chip via pre-printing. The back of the semiconductor chip is adhered on the chip carrier, and the front electrode of the semiconductor chip and the pin are connected respectively with a metal connector. The size, shape and thickness of the adhesive material are applied according to different application requirements according to size and shapes of the contact zone of the semiconductor chip and the metal connector. Particularly, the adhesive zones are formed by pre-printing the adhesive material thus significantly enhance the quality and performance of semiconductor products, and improves the productivity.

摘要翻译： 本发明公开了一种半导体封装，其具有预先印刷在引线框架和芯片上的粘合剂材料及其制造方法。 粘合剂材料通过预打印被施加到芯片载体和引线框架的引脚以及半导体芯片的前电极上。 半导体芯片的背面粘附在芯片载体上，并且半导体芯片的前电极和引脚分别与金属连接器连接。 根据不同的应用要求，根据半导体芯片和金属连接器的接触区域的尺寸和形状来施加粘合材料的尺寸，形状和厚度。 特别地，通过预先印刷粘合剂材料形成粘合剂区域，从而显着提高半导体产品的质量和性能，并提高生产率。

公开(公告)号：US20120262100A1

公开(公告)日：2012-10-18

申请号：US13088573

申请日：2011-04-18

申请人： Henning M. Hauenstein ,  Andrea Gorgerino

发明人： Henning M. Hauenstein ,  Andrea Gorgerino

IPC分类号： H02P6/14 ,  H05K7/12

CPC分类号： H01L23/49844 ,  H01L23/492 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/40139 ,  H01L2224/40227 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/84

摘要： According to an exemplary embodiment, a bondwireless power module includes a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device. The bondwireless power module also includes a high side conductive clip connecting a collector of the high side device to a cathode of the high side device, and causing current to traverse through the high side conductive clip to another high side conductive clip in another power module. The bondwireless power module further includes a low side conductive clip connecting an emitter of the low side device to an anode of the low side device, and causing current to traverse through the low side conductive clip to another low side conductive clip in the another power module. The bondwireless power module can be a motor drive inverter module.

摘要翻译： 根据示例性实施例，无电线电源模块包括将高侧器件的发射极/阳极节点耦合到低侧器件的集电极/阴极节点的公共输出焊盘。 接合无线电源模块还包括将高侧器件的集电极连接到高侧器件的阴极的高侧导电夹，并使电流穿过高侧导电夹子穿过另一个功率模块中的另一个高侧导电夹。 无接线电源模块还包括将低侧器件的发射极连接到低侧器件的阳极的低侧导电夹子，并使电流穿过低侧导电夹子穿过另一功率模块中的另一低侧导电夹 。 无键电源模块可以是电机驱动逆变器模块。