Abstract:
A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.
Abstract:
A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.
Abstract:
A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.
Abstract:
A power module includes a heat radiation layer having the first main surface and the second main surface of reverse side opposed to the first main surface, an insulation layer disposed on the first main surface of a radiation layer, a wiring portion of current circuit disposed on the insulation layer and a plurality of switching elements disposed on the insulation layer and electrically connected to the wiring portion of current circuit. A plurality of external terminals are electrically connected to the wiring portions of current circuit. Furthermore, the module has a resin sealing all of the insulation layer, a wiring portion for current circuit, switching elements and the first main surface of the radiation layer, and a resin sealing a portion of the second main surface of the radiation layer with the resin.
Abstract:
A power module comprises a heat radiation layer having the first main surface and the second main surface of reverse side opposed to the first main surface, an insulation layer disposed on the first main surface of a radiation layer, a wiring potion for current circuit disposed on the insulation layer and a plurality of switching element disposed on the insulation layer and electrically connected to the wiring portion of current circuit. A plurality of external terminals are electrically connected to the wiring portions of current circuit. Furthermore, the module has a resin sealing all of the insulation layer, a wiring portion for current circuit, switching elements and the first main surface of the radiation layer, and a resin sealing a portion of the second main surface of the radiation layer with the resin.
Abstract:
A power semiconductor package is disclosed. The power semiconductor package includes a leadframe having partially etched segments and at least one non-etched segment, a first semiconductor die having a first power transistor and a driver integrated circuit (IC) monolithically formed thereon, a second semiconductor die having a second power transistor, wherein the first semiconductor die and the second semiconductor die are configured for attachment to the partially etched segments, and wherein the partially etched segments and the at least one non-etched segment enable the first semiconductor die to be coupled to the second semiconductor die by a legless conductive clip.
Abstract:
A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and connectors. The components are also thermally matched such that the packages can be assembled and operating continuously at high temperatures and withstand extreme temperature variations without the bonds failing or the package cracking due to a thermal mismatch.
Abstract:
An integrated power assembly is disclosed. The integrated power assembly includes a first leadframe having partially etched segments, a first semiconductor die configured for attachment to a partially etched segment of the first leadframe, a second leadframe having a legless conductive clip coupled to a top surface of the first semiconductor die. The integrated power assembly also includes a third leadframe over the second leadframe and having a partially etched segment, a second semiconductor die configured for attachment to the partially etched segment of the third leadframe, wherein the second semiconductor die is coupled to the first semiconductor die through the partially etched segment of the third leadframe, and wherein the partially etched segment of the third leadframe is situated on the legless conductive clip of the second leadframe.
Abstract:
A power semiconductor package is disclosed. The power semiconductor package includes a leadframe having partially etched segments and at least one non-etched segment, a first semiconductor die having a first power transistor and a driver integrated circuit (IC) monolithically formed thereon, a second semiconductor die having a second power transistor, wherein the first semiconductor die and the second semiconductor die are configured for attachment to the partially etched segments, and wherein the partially etched segments and the at least one non-etched segment enable the first semiconductor die to be coupled to the second semiconductor die by a legless conductive clip.
Abstract:
An integrated power assembly is disclosed. The integrated power assembly includes a printed circuit board, a first leadframe having partially etched segments and non-etched segments on the printed circuit board, a first semiconductor die configured for attachment to the partially etched segments of the first leadframe, a second leadframe having a legless conductive clip, and a second semiconductor die situated over the first semiconductor die and being coupled to the first semiconductor die by the legless conductive clip.