Abstract:
A semiconductor package includes a package substrate including a fastening section at one end and a connecting terminal section at an opposite end, at least one semiconductor device mounted on the package substrate, at least one heat pipe on the at least one semiconductor device, and a lid on the at least one semiconductor device and the at least one heat pipe. At least one end of the heat pipe is between the at least one semiconductor device and either the fastening section or the connecting terminal section.
Abstract:
The present invention provides a heat dissipation structure that does not cause problems such as contact failures in electronic components and that is applicable to electronic components with high heat densities. The present invention also provides a method for easily repairing an electronic device. The heat dissipation structure is obtained by filling and curing a thermally conductive curable resin composition in an electromagnetic shielding case on a substrate on which an electronic component with a heat density of 0.2 W/cm2 to 500 W/cm2 is mounted, the thermally conductive curable resin composition containing a curable liquid resin (I) and a thermally conductive filler (II), having a viscosity at 23° C. of 30 Pa·s to 3000 Pa·s and a thermal conductivity of 0.5 W/(m·K) or more, and being curable by moisture or heat.
Abstract translation:本发明提供一种散热结构,其不会引起电子部件的接触不良等问题,适用于高密度的电子部件。 本发明还提供一种易于修复电子设备的方法。 通过在其上安装有热密度为0.2W / cm 2至500W / cm 2的电子部件的基板上的电磁屏蔽壳体中填充和固化导热性固化性树脂组合物,获得散热结构, 在23℃下的粘度为30Pa·s〜3000Pa·s,导热率为0.5W /(m·K)的含有固化型液态树脂(I)和导热性填料(II)的树脂组合物, 或更多,并且可通过水分或热量固化。
Abstract:
Provided are a semiconductor device including an EMI shield, a method of manufacturing the same, a semiconductor module including the semiconductor device, and an electronic system including the semiconductor device. The semiconductor device includes a lower semiconductor package, an upper semiconductor package, a package bump, and an EMI shield. The lower semiconductor package includes a lower substrate, a lower semiconductor chip mounted on the lower substrate, and a ground wire separated from the lower semiconductor chip. The upper semiconductor package includes an upper substrate stacked on the lower semiconductor package, and an upper semiconductor chip stacked on the upper substrate. The package bump electrically connects the upper semiconductor package and the lower semiconductor package. The EMI shield covers the upper and lower semiconductor packages and is electrically connected to the ground wire.
Abstract:
An electronic component has a printed substrate having a die bonding portion, a semiconductor element rigidly bonded to the die bonding portion of the printed substrate by a die bonding resin, and a wire bonding terminal formed by a conductor pattern on the printed substrate that is connected to the semiconductor element by a bonding wire. A groove portion located at a level lower than the conductor pattern of the printed substrate is formed in a region located on at least a die bonding portion side in a region surrounding the wire bonding terminal.
Abstract:
A semiconductor device packaging structure is disclosed that can improve reliability of a performance test for the semiconductor device and prevent damage to the semiconductor device during transportation or packaging for shipment. An IC cover is attached to the semiconductor device, which has height unevenness because it includes semiconductor chips and electric parts having different heights. The IC cover includes projecting portions and a base portion. After being attached to the semiconductor device, the projecting portions stand in a free area in the semiconductor device, and the base portion is supported by the projections to be separated from the semiconductor chips and electric parts in the semiconductor device. The IC cover is detachably attached to the semiconductor device.
Abstract:
A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
Abstract:
A high-frequency circuit package including a dielectric substrate; a signal line, a first ground conductor layer, a second ground conductor layer, and a frame-shaped dielectric layer formed on the dielectric substrate; a third ground conductor layer formed on the frame-shaped dielectric layer; a first recess formed in the frame-shaped dielectric layer and including a first surface and a second surface that are located above the first ground conductor layer and the second ground conductor layer and extend laterally at an oblique angle with respect to the length direction of the signal line; a first ground line formed on the first surface and electrically connecting the first ground conductor layer with the third ground conductor layer; and a second ground line formed on the second surface and electrically connecting the second ground conductor layer with the third ground conductor layer.
Abstract:
In a method of vacuum packaging a MEMS device, at least one MEMS device is attached on a substrate. A solder preform is printed on the substrate at the perimeter surrounding the substrate. A lid is attached to the solder preform wherein the lid provides a cavity enclosing the at least one MEMS device. A first reflowing step reflows the solder at a first temperature, partially sealing the lid/substrate interface and at the same time does the outgassing and baking procedure for the packaging. Flux is applied onto an outer ring of the solder preform and a second step reflows the solder at a second temperature, completely sealing the lid/substrate interface and providing a vacuum cavity enclosing the at least one MEMS device.
Abstract:
A microwave circuit package having a ball grid array, BGA, soldered on to a planar major surface of a metal housing of the package for the electrical connection of the ports of the microwave circuit through RF signal paths to an adjacent electrical device. Each of the RF signal paths comprises a pin electrically connected to a respective port of the microwave circuit package, projecting normally through an opening in the said major surface from which it is electrically insulated, and soldered to a ball of the BGA; the pin and the surrounding balls of the BGA, which are soldered to the metal housing, constituting a coaxial RF signal path.
Abstract:
A crystal oscillator emulator integrated circuit, comprises a first temperature sensor that senses a first temperature of the integrated circuit; memory that stores calibration parameters and that selects at least one of the calibration parameters based on the first temperature; a semiconductor oscillator that generates an output signal having a frequency that is based on the calibration parameters; and an adaptive calibration circuit that adaptively adjusts a calibration approach for generating the calibration parameters based on a number of temperature test points input thereto.