公开(公告)号：US20170165758A1

公开(公告)日：2017-06-15

申请号：US15306018

申请日：2015-04-23

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Sho TATSUOKA ,  Kenji YAMAGUCHI

IPC分类号： B23B27/14 ,  B23C5/16

CPC分类号： B23B27/148 ,  B22F2005/001 ,  B23B27/14 ,  B23C5/16 ,  B23C2224/22 ,  B23C2228/10 ,  C22C29/04 ,  C22C29/08 ,  C22C2026/003 ,  C23C16/34 ,  C23C16/36 ,  C23C16/403 ,  C23C16/45523 ,  C23C16/45589 ,  C23C28/048 ,  C23C30/00 ,  C23C30/005

摘要： The hard coating layer includes at least a complex nitride or complex carbonitride layer expressed by the composition formula (Ti1-xAlx)(CyN1-y). The average Al content ratio xavg the average C content ratio yavg satisfy 0.60≦xavg≦0.95 and 0≦yavg≦0.005, respectively, each of the xavg and yavg is in atomic ratio. The crystal grains constituting the complex nitride or complex carbonitride layer include a crystal grain having the NaCl face-centered cubic structure. A predetermined average crystal grain misorientation exists in the crystal grains having the NaCl face-centered cubic structure.

公开(公告)号：US20170117155A1

公开(公告)日：2017-04-27

申请号：US15398462

申请日：2017-01-04

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Joshua Collins ,  Tomas Sadilek ,  Hyeong Seop Shin ,  Xiaolan Ba ,  Raashina Humayun ,  Michal Danek ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  C23C16/455 ,  C23C16/458 ,  H01L21/768 ,  C23C16/52

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/458 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H01L27/11582 ,  H01L28/00

摘要： Provided herein are methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a chlorine-containing tungsten precursor and hydrogen in cycles of temporally separated pulses, without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface.

公开(公告)号：US20170096739A1

公开(公告)日：2017-04-06

申请号：US14876156

申请日：2015-10-06

申请人： City University of Hong Kong

发明人： KWOK YAN LI ,  ZHIFENG ZHOU ,  PO WAN SHUM

IPC分类号： C23C16/513 ,  C23C16/455

CPC分类号： C23C16/513 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/45559 ,  C23C16/505 ,  C23C16/5096

摘要： Homogeneous and transparent protective coatings for precious metals and copper alloys and techniques for forming the coatings on precious metals and copper alloys are provided. In an embodiment, ionic oxide film is deposited onto a surface of a substrate including a metal, such as a precious metal and/or a copper alloy, using pulsed chemical vapor deposition (PCVD). A homogenous and transparent solid film based on ionic oxide is formed on the surface of the substrate in response to the depositing.

公开(公告)号：US09611544B2

公开(公告)日：2017-04-04

申请号：US13224240

申请日：2011-09-01

申请人： Adrien LaVoie ,  Mandyam Sriram

发明人： Adrien LaVoie ,  Mandyam Sriram

IPC分类号： C23C16/04 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56 ,  H01L21/02 ,  H01L21/768 ,  H01L21/762

CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348 ,  H01L21/76224 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US09598768B2

公开(公告)日：2017-03-21

申请号：US13059356

申请日：2008-09-24

申请人： Takahiro Shirahata ,  Hiroyuki Orita ,  Akio Yoshida ,  Masahisa Kogura

发明人： Takahiro Shirahata ,  Hiroyuki Orita ,  Akio Yoshida ,  Masahisa Kogura

IPC分类号： C23C16/448 ,  C23C16/40 ,  C23C16/48 ,  C23C18/12 ,  H01L21/02 ,  C23C16/452 ,  C23C16/455

CPC分类号： C23C16/4486 ,  C23C16/407 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/482 ,  C23C18/12 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1291 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02628

摘要： A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.

公开(公告)号：US20170062469A1

公开(公告)日：2017-03-02

申请号：US15214104

申请日：2016-07-19

申请人： Applied Materials, Inc.

发明人： Michael Wenyoung TSIANG ,  Praket P. JHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Sang Hyuk KIM ,  Myung Hun JU ,  Hyung Jin PARK ,  Ryeun Kwan KIM ,  Jin Chul SON ,  Saiprasanna GNANAVELU ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Majid K. SHAHREZA ,  Jason K. FOSTER

IPC分类号： H01L27/115 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/423 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/324

CPC分类号： H01L27/11582 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/3115 ,  H01L21/76801 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L29/06

摘要： Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.

摘要翻译： 本公开的实施例通常涉及用于形成用于3D NAND结构中的层间电介质（ILD）层的电介质膜叠层的改进方法。 在一个实施例中，该方法包括提供其上沉积有栅极叠层的衬底，其中使用第一RF功率在栅极堆叠的暴露表面上形成第一氧化物层，以及第一工艺气体，其包括TEOS气体和第一含氧气体 并且使用第二RF功率在第一氧化物层上形成第二氧化物层，以及包括硅烷气体和第二含氧气体的第二工艺气体。

公开(公告)号：US09576790B2

公开(公告)日：2017-02-21

申请号：US14686595

申请日：2015-04-14

申请人： ASM IP HOLDING B.V.

发明人： Viljami J. Pore ,  Yosuke Kimura ,  Kunitoshi Namba ,  Wataru Adachi ,  Hideaki Fukuda ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  H01L21/311

CPC分类号： H01L21/02112 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/2254 ,  H01L21/31111

摘要： Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.

摘要翻译： 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在低于约400℃的温度下在基材上分解。含硼和碳的一种或多种膜可以具有小于约30埃的厚度。 提供掺杂半导体衬底的方法。 掺杂半导体衬底可以包括通过在大约300℃至大约450℃的工艺温度下将衬底暴露于气相硼前体而在半导体衬底上沉积硼和碳膜，其中硼前体包括硼， 碳和氢，并在约800℃至约1200℃的温度下退火硼和碳膜。

公开(公告)号：US09570274B2

公开(公告)日：2017-02-14

申请号：US14607997

申请日：2015-01-28

申请人： Novellus Systems, Inc.

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi Kattige ,  Bart van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/469 ,  H01J37/32 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/768 ,  H01L21/67 ,  C23C16/44 ,  C23C16/52

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US09558935B2

公开(公告)日：2017-01-31

申请号：US14926684

申请日：2015-10-29

申请人： International Business Machines Corporation

发明人： Donald Francis Canaperi ,  Alfred Grill ,  Sanjay C. Mehta ,  Son Van Nguyen ,  Deepika Priyadarshini ,  Hosadurga Shobha ,  Matthew T. Shoudy

IPC分类号： H01L21/02 ,  H01L23/532 ,  H01L29/51 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L23/522 ,  H01L23/528 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L23/485

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02299 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/42364 ,  H01L29/4983 ,  H01L29/511 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

摘要翻译： 本发明的实施例提供无氢介电膜和制造方法。 化学气相沉积工艺（PECVD，热CVD，SACVD，HDP CVD和PE等）使用无氢前体，如四异氰酸酯硅烷和无氢反应物，如氮，氧（O 2 / O 3）和一氧化二氮 热ALD）以产生无氢介电膜。 在一些实施例中，存在具有各种材料的子层的多层电介质膜，例如氧化硅，氮化硅和氮氧化硅。 在实施方案中，无氢反应物可以包括四异氰酸酯硅烷，以及这些无H气体的无氢气体，包括但不限于N 2，O 2，O 3，N 2 O，CO 2，CO及其组合。 等离子体可用于增强TICS和其他无H气体之间的反应。 可以在膜沉积期间控制等离子体以在膜的每个子层内实现可变密度。

公开(公告)号：US09548404B2

公开(公告)日：2017-01-17

申请号：US14425255

申请日：2013-06-20

申请人： DONGFANG ELECTRIC (YIXING) MAGI SOLAR POWER TECHNOLOGY CO., LTD.

发明人： Lun Huang ,  Chunhui Lu ,  Junqing Wu ,  Zerong Hou ,  Jinwei Wang

IPC分类号： H01L21/00 ,  H01L31/0216 ,  C23C16/02 ,  C23C16/30 ,  H01L31/18 ,  C23C16/455 ,  G02B1/113 ,  G02B1/115

CPC分类号： H01L31/02168 ,  C23C16/0218 ,  C23C16/308 ,  C23C16/45523 ,  G02B1/113 ,  G02B1/115 ,  H01L31/1804

摘要： Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the furnace at 420° C. and the pressure as 80 mTorr for 4 minutes; pretreating silicon wafers at 420° C. with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the furnace tube as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420° C., with a ammonia gas flux of 0.1-0.5 slm, a silane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450° C., with a ammonia gas flux of 2000-2200 sccm, a silane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420° C. with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes. The deposition steps may be more than 2 steps. The obtained anti-reflection film has anti-PID effect, thus can improve the electrical performance of solar cells.

摘要翻译： 提供了一种制造具有抗PID效果的抗反射膜的方法。 该方法包括：将炉管抽真空，将炉内温度保持在420℃，压力为80mTorr 4分钟; 在420℃下用3.8-4.4slm的一氧化二氮通量和1700mTorr的压力预处理硅晶片3分钟; 测试压力以保持炉管的内部压力为50mTorr的恒定值0.2-0.5分钟; 在420℃预沉积，具有0.1-0.5slm的氨气通量，180sccm-200sccm的硅烷通量，3.5-4.1slm的一氧化二氮通量，1000mTorr的压力和4300的射频功率 w为0.3-0.5分钟; 在450℃下沉积膜，其中氨气流量为2000-2200sccm，硅胶流量为7000-7500sccm，一氧化二氮通量为2-2.4slm，压力为1700mTorr，射频功率为4300w 3分钟; 在6-10slm的氮气通量，10000mTorr的压力下，在420℃吹膜冷却5-8分钟。 沉积步骤可以超过2个步骤。 所获得的抗反射膜具有抗PID效应，从而可以提高太阳能电池的电气性能。