Cemented carbide and tool containing the same

    公开(公告)号:US12104229B1

    公开(公告)日:2024-10-01

    申请号:US18572807

    申请日:2023-05-12

    IPC分类号: C22C29/08 C22C29/02 C22C29/06

    摘要: A cemented carbide is composed of a first hard phase, a second hard phase, and a binder phase, wherein the first hard phase is composed of tungsten carbide particles and having a particle diameter D10 of 0.30 μm to 0.60 μm, a particle diameter D90 of 0.90 μm to 1.40 μm, the second hard phase contains at least one first compound selected from the group consisting of TiNbC, TiNbN, and TiNbCN, and having an average particle diameter of 0.03 μm to 0.50 μm, a content of the binder phase in the cemented carbide is 8.0 vol % to 16.0 vol %, an average particle diameter of the binder phase is 0.15 μm to 0.45, a particle diameter D95 of the binder phase is 1.5 μm or less, and a degree of dispersion of the binder phase is 0.15 to 0.25.

    CEMENTED CARBIDE COMPOSITIONS AND APPLICATIONS THEREOF

    公开(公告)号:US20240035125A1

    公开(公告)日:2024-02-01

    申请号:US18379825

    申请日:2023-10-13

    申请人: Kennametal Inc.

    IPC分类号: C22C29/08 C22C29/06

    CPC分类号: C22C29/08 C22C29/067

    摘要: Sintered cemented carbides are described herein exhibiting enhanced high temperature properties without dramatic losses in bending strength. In some embodiments, a sintered cemented carbide composition comprises tungsten carbide, a metallic binder phase comprising at least one metal of the iron group, and at least one solid solution carbide phase comprising tantalum (Ta) and molybdenum (Mo), wherein a value of (Mo/Ta) in the sintered cemented carbide composition is from 0.3-100, and the sintered cemented carbide composition has a transverse rupture strength of at least 4000 MPa.

    Polycrystalline Diamond Compact Cutter with Low Cobalt Content Cemented Tungsten Carbide Substrate

    公开(公告)号:US20190242191A1

    公开(公告)日:2019-08-08

    申请号:US16240751

    申请日:2019-01-06

    申请人: Wenhui Jiang

    发明人: Wenhui Jiang

    摘要: The present invention relates to a polycrystalline diamond compact cutter with a low cobalt content cemented tungsten carbide substrate having a coating covering at least a portion of the carbide substrate and the method of making the same. The carbide substrate has a content of three to ten percent by weight on average of cobalt or its alloy as a binder. The coating covers at least partially the exterior surfaces of the carbide substrate, and it may extend over partially or entirely the polycrystalline diamond table. The coating is either a single layer or multilayer. The coating comprises at least a metallic layer. The coating has a thickness of 0.1 μm-100 μm. The coating may have a metallurgical bonding with the polycrystalline diamond compact cutter. Methods for preparing such coating comprise physical vapor deposition, chemical vapor deposition, thermoreactive deposition and diffusion, electrical plating, electroless plating, or their combinations.