公开(公告)号：US09852879B2

公开(公告)日：2017-12-26

申请号：US14751903

申请日：2015-06-26

Applicant: CANON ANELVA CORPORATION

Inventor： Yasushi Kamiya ,  Hiroshi Akasaka ,  Yuta Konno

IPC: H01J37/04 ,  H01J37/24 ,  H01J37/08 ,  H01J37/305 ,  H01J37/20 ,  H01J37/32

CPC classification number: H01J37/243 ,  H01J37/045 ,  H01J37/08 ,  H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3178 ,  H01J37/32422

Abstract: An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.

公开(公告)号：US09852876B2

公开(公告)日：2017-12-26

申请号：US15423013

申请日：2017-02-02

Applicant: NuFlare Technology, Inc.

Inventor： Yasuo Kato ,  Hideo Inoue ,  Hiroshi Matsumoto ,  Ryoh Kawana

IPC: H01J37/00 ,  H01J37/147 ,  H01J37/317 ,  H01J37/20 ,  H01J37/04 ,  H01J37/304

CPC classification number: H01J37/147 ,  H01J37/045 ,  H01J37/20 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/202 ,  H01J2237/30461 ,  H01J2237/31769 ,  H01J2237/31774

Abstract: In one embodiment, a multi charged particle beam writing apparatus includes processing circuitry that is programmed to perform the function of a data region determination part determining a data region based on boundaries of pixels obtained by dividing a writing area of a substrate into mesh-shaped regions, an irradiation range of multiple charged particle beams, and boundaries of stripe segments obtained by dividing the writing area into segments having a predetermined width such that the segments are arranged in a predetermined direction, a deflection coordinate adjustment part adjusting deflection coordinates of the multiple charged particle beams such that the boundaries of the pixels are mapped to a boundary of the irradiation range, and a correction part calculating a corrected dose of each beam of the multiple charged particle beams by distributing, based on a positional relationship between the beam and pixels in the data region, a dose of the beam corresponding to a pixel in the data region calculated based on write data to one or more beams, and adding doses distributed to the beam, and a writing mechanism, including a charged particle beam source, a deflector, and a stage on which a target object is placed, and the writing mechanism deflecting the multiple charged particle beams based on the adjusted deflection coordinates and applying the beams each having the corrected dose to write a pattern.

公开(公告)号：US20170345612A1

公开(公告)日：2017-11-30

申请号：US15591767

申请日：2017-05-10

Applicant: NuFlare Technology, Inc.

Inventor： Takanao TOUYA ,  Hiroshi Matsumoto ,  Munehiro Ogasawara ,  Hirofumi Morita

IPC: H01J37/04 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31774

Abstract: A blanking device for multi charged particle beams includes a first substrate, in which plural first openings are formed in an array, to form multi-beams, a second substrate in which plural second openings are formed in an array, where a corresponding beam of the multi-beams passes through each of the plural second openings, plural control electrodes, which are on the second substrate and each of which is close to a corresponding one of the plural second openings and arranged not to be directly exposed to other second opening adjacent to the corresponding one of the plural second openings, to be switchably applied with first and second potentials, plural counter electrodes, each of which is facing a corresponding one of the plural control electrodes, to be applied with the second potential, and a shield film provided between the first substrate and the plural control electrodes.

公开(公告)号：US09812289B2

公开(公告)日：2017-11-07

申请号：US15247056

申请日：2016-08-25

Applicant: NuFlare Technology, Inc.

Inventor： Satoru Hirose ,  Takayuki Ohnishi

IPC: H01J37/00 ,  H01J37/304 ,  H01J37/317 ,  H01J37/04 ,  H01J37/147

CPC classification number: H01J37/304 ,  H01J37/045 ,  H01J37/147 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/3045 ,  H01J2237/31776

Abstract: In one embodiment, a charged particle beam drawing apparatus performs drawing by deflecting a charged particle beam with a deflector. A method for evaluating the apparatus includes making a shot of a first pattern, controlling a deflection amount by the deflector to move an applied position of the beam from the first pattern along a first direction to make a shot of a second pattern, controlling the deflection amount to move the applied position from the second pattern along the first direction to make a shot of a third pattern, controlling the deflection amount to move the applied position from the third pattern along a second direction opposite to the first direction to make a shot of a fourth pattern between the second pattern and the third pattern, calculating an interval between the second pattern and the fourth pattern, and comparing the calculated interval to a reference interval.

公开(公告)号：US20170301506A1

公开(公告)日：2017-10-19

申请号：US15466304

申请日：2017-03-22

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi MATSUMOTO

IPC: H01J37/04 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/1472 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/31761

Abstract: A multi charged particle beam exposure method includes transmitting ON/OFF control signals each being an ON/OFF control signal for a corresponding beam of multi-beams of charged particle beams in a batch to a blanking apparatus in which there are mounted a substrate where a plurality of passage holes are formed to let a corresponding beam of the multi-beams individually pass therethrough, and a plurality of individual blanking mechanisms arranged in the substrate to individually perform blanking deflection of each beam of the multi-beams, and irradiating the substrate with the multi-beams in accordance with the ON/OFF control signals transmitted in a batch, while shifting an irradiation timing for each group obtained by grouping the multi-beams into a plurality of groups by a plurality of individual blanking mechanisms mounted in the blanking apparatus.

公开(公告)号：US20170269481A1

公开(公告)日：2017-09-21

申请号：US15329835

申请日：2014-12-22

Applicant: INTEL CORPORATION

Inventor： YAN A. BORODOVSKY

IPC: G03F7/20 ,  H01L21/768 ,  H01L21/027

CPC classification number: G03F7/2037 ,  H01J37/045 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31769 ,  H01L21/0277 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.

公开(公告)号：US20170243713A1

公开(公告)日：2017-08-24

申请号：US15389151

申请日：2016-12-22

Applicant: FEI Company

Inventor： Erik René Kieft ,  Walter van Dijk

IPC: H01J37/04 ,  H01J37/147 ,  H01J37/28 ,  H01J37/20 ,  H01J37/244

CPC classification number: H01J37/045 ,  H01J37/147 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/1504 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24585 ,  H01J2237/2802

Abstract: A method of using a Charged Particle Microscope, comprising: A specimen holder, for holding a specimen; A source, for producing an irradiating beam of charged particles; An illuminator, for directing said beam so as to irradiate the specimen; A detector, for detecting a flux of emergent radiation emanating from the specimen in response to said irradiation, additionally comprising the following steps: In said illuminator, providing an aperture plate comprising an array of apertures; Using a deflecting device to scan said beam across said array, thereby alternatingly interrupting and transmitting the beam so as to produce a train of beam pulses; Irradiating said specimen with said train of pulses, and using said detector to perform positionally resolved (temporally discriminated) detection of the attendant emergent radiation.

公开(公告)号：US09697982B2

公开(公告)日：2017-07-04

申请号：US15091639

申请日：2016-04-06

Applicant: Euclid TechLabs, LLC

Inventor： Sergey V Baryshev ,  Chunguang Jing ,  Jiaqi Qiu ,  Sergey Antipov ,  Gwanghui Ha ,  June W Lau ,  Yimei Zhu

IPC: H01J37/04 ,  H01J37/147 ,  H01J37/06

CPC classification number: H01J37/06 ,  H01J37/045 ,  H01J37/1472 ,  H01J2237/04 ,  H01J2237/0432 ,  H01J2237/061 ,  H01J2237/1508

Abstract: An ElectroMagnetic-Mechanical Pulser can generate electron pulses at rates up to 50 GHz, energies up to 1 MeV, duty cycles up to 10%, and pulse widths between 100 fs and 10 ps. A modulating Transverse Deflecting Cavity (“TDC”) imposes a transverse modulation on a continuous electron beam, which is then chopped into pulses by an adjustable Chopping Collimating Aperture. Pulse dispersion due to the modulating TDC is minimized by a suppressing section comprising a plurality of additional TDC's and/or magnetic quadrupoles. In embodiments the suppression section includes a magnetic quadrupole and a TDC followed by four additional magnetic quadrupoles. The TDC's can be single-cell or triple-cell. A fundamental frequency of at least one TDC can be tuned by literally or virtually adjusting its volume. TDC's can be filled with vacuum, air, or a dielectric or ferroelectric material. Embodiments are easily switchable between passive, continuous mode and active pulsed mode.

公开(公告)号：US09691585B2

公开(公告)日：2017-06-27

申请号：US14699216

申请日：2015-04-29

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto ,  Munehiro Ogasawara ,  Ryoichi Yoshikawa

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/1471 ,  H01J37/045 ,  H01J37/147 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3026 ,  H01J37/317 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/202 ,  H01J2237/20278 ,  H01J2237/20285 ,  H01J2237/20292 ,  H01J2237/304 ,  H01J2237/30483 ,  H01J2237/3175

Abstract: A multi charged particle beam writing method includes, shifting a writing position of each corresponding beam to a next writing position by performing another beam deflection of multi charged particle beams, in addition to the beam deflection for a tracking control, while continuing the beam deflection for the tracking control after the maximum writing time has passed; emitting the each corresponding beam in the “on” state to the next writing position having been shifted of the each corresponding beam, during a corresponding writing time while continuing the tracking control; and returning a tracking position such that a next tracking start position is a former tracking start position where the tracking control was started, by resetting the beam deflection for the tracking control after emitting the each corresponding beam to the next writing position having been shifted at least once of the each corresponding beam while continuing the tracking control.

公开(公告)号：US20170102615A1

公开(公告)日：2017-04-13

申请号：US15122622

申请日：2014-12-19

Applicant: Intel Corporation

Inventor： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/311

CPC classification number: G03F7/2037 ,  H01J37/045 ,  H01J37/3026 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/303 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01L21/0277 ,  H01L21/31144

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.