公开(公告)号：US12176323B2

公开(公告)日：2024-12-24

申请号：US17728813

申请日：2022-04-25

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Henning Braunisch ,  Aleksandar Aleksov ,  Shawna M. Liff ,  Johanna M. Swan ,  Patrick Morrow ,  Kimin Jun ,  Brennen Mueller ,  Paul B. Fischer

IPC: H01L25/065 ,  H01L23/498 ,  H01L25/00

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include: a first die having a first surface and an opposing second surface, first conductive contacts at the first surface of the first die, and second conductive contacts at the second surface of the first die; and a second die having a first surface and an opposing second surface, and first conductive contacts at the first surface of the second die; wherein the second conductive contacts of the first die are coupled to the first conductive contacts of the second die by interconnects, the second surface of the first die is between the first surface of the first die and the first surface of the second die, and a footprint of the first die is smaller than and contained within a footprint of the second die.

公开(公告)号：US12155372B2

公开(公告)日：2024-11-26

申请号：US17688065

申请日：2022-03-07

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Aleksandar Aleksov ,  Feras Eid ,  Telesphor Kamgaing ,  Johanna M. Swan

IPC: H03H9/54 ,  H03H9/02 ,  H03H9/64

Abstract: Embodiments may relate to a die such as an acoustic wave resonator (AWR) die. The die may include a first filter and a second filter in the die body. The die may further include an electromagnetic interference (EMI) structure that surrounds at least one of the filters. Other embodiments may be described or claimed.

公开(公告)号：US12136596B2

公开(公告)日：2024-11-05

申请号：US18374595

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Johanna M. Swan

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/13 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate including a dielectric material having a first surface and an opposing second surface, a first material on at least a portion of the second surface, and a second material on at least a portion of the first material, wherein the second material has a different material composition than the first material.

公开(公告)号：US20240274576A1

公开(公告)日：2024-08-15

申请号：US18632919

申请日：2024-04-11

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel A. Elsherbini ,  Aleksandar Aleksov ,  Shawna M. Liff ,  Johanna M. Swan

IPC: H01L25/065 ,  H01L23/00

CPC classification number: H01L25/0655 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/17 ,  H01L24/29 ,  H01L24/30 ,  H01L25/0652 ,  H01L2224/08225 ,  H01L2224/09177 ,  H01L2224/81

Abstract: Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region including metal contacts that are distributed non-uniformly. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact.

公开(公告)号：US12040776B2

公开(公告)日：2024-07-16

申请号：US16526633

申请日：2019-07-30

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Aleksandar Aleksov ,  Feras Eid ,  Georgios Dogiamis ,  Johanna M. Swan

IPC: H03H9/05 ,  H01L23/00 ,  H01L23/538 ,  H01L25/00 ,  H01L25/18 ,  H03H9/58 ,  H10N30/87 ,  H10N30/88 ,  H10N39/00 ,  H01L23/498

CPC classification number: H03H9/0552 ,  H01L23/5385 ,  H01L24/16 ,  H01L25/18 ,  H01L25/50 ,  H03H9/58 ,  H10N30/875 ,  H10N30/883 ,  H10N39/00 ,  H01L23/49816 ,  H01L2224/16225 ,  H01L2924/19042

Abstract: Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed.

公开(公告)号：US20240222018A1

公开(公告)日：2024-07-04

申请号：US18147503

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Thomas Sounart ,  Henning Braunisch ,  Aleksandar Aleksov ,  Kristof Darmawikarta ,  Numair Ahmed ,  Darko Grujicic ,  Suddhasattwa Nad ,  Benjamin Duong ,  Marcel Wall ,  Shayan Kaviani

IPC: H01G4/01 ,  H01G4/30 ,  H01G4/33 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01G4/01 ,  H01G4/306 ,  H01G4/33 ,  H01L21/4846 ,  H01L23/5386 ,  H01L28/87 ,  H01L28/92 ,  H01G4/008

Abstract: Substrate package-integrated oxide capacitors and related methods are disclosed herein. An example apparatus including a first layer and a thin film capacitor including a second layer on the first layer, the second layer defining a plurality of openings and a third layer disposed on the first layer and in the plurality of openings, the second layer and the third layer corresponding to electrodes of a capacitor and a fourth layer disposed between the first layer and the second layer, the third layer including an oxidized material, the third layer forming a dielectric of the capacitor.

公开(公告)号：US12002745B2

公开(公告)日：2024-06-04

申请号：US17544693

申请日：2021-12-07

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew J. Manusharow ,  Krishna Bharath ,  William J. Lambert ,  Robert L. Sankman ,  Aleksandar Aleksov ,  Brandon M. Rawlings ,  Feras Eid ,  Javier Soto Gonzalez ,  Meizi Jiao ,  Suddhasattwa Nad ,  Telesphor Kamgaing

IPC: H05K1/02 ,  H01F17/00 ,  H01F17/06 ,  H01F27/28 ,  H01F27/40 ,  H01F41/04 ,  H01G4/18 ,  H01G4/252 ,  H01G4/30 ,  H01G4/33 ,  H01L21/48 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L23/49838 ,  H01F17/0006 ,  H01F27/2804 ,  H01F27/40 ,  H01F41/041 ,  H01G4/33 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/66 ,  H01L28/00 ,  H01L28/10 ,  H01L28/60 ,  H01F2027/2809 ,  H01L2223/6661

Abstract: Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, a transformer may be formed in the electrical package. The transformer may include a first conductive loop that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first conductive loop from a second conductive loop that is formed in the package. Additional embodiments of the invention include forming a capacitor formed in the electrical package. For example, the capacitor may include a first capacitor plate that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first capacitor plate form a second capacitor plate that is formed in the package. The thin dielectric spacer material in the transformer and capacitor allow for increased coupling factors and capacitance density in electrical components.

公开(公告)号：US20240113005A1

公开(公告)日：2024-04-04

申请号：US17957751

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Aleksandar Aleksov ,  Hiroki Tanaka ,  Brandon Marin ,  Srinivas Pietambaram ,  Xavier Brun

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/13

CPC classification number: H01L23/49833 ,  H01L21/4803 ,  H01L21/481 ,  H01L21/4846 ,  H01L23/13 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/16 ,  H01L2224/0346 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/16146 ,  H01L2224/1624 ,  H01L2224/80201 ,  H01L2224/80379 ,  H01L2924/0665

Abstract: Microelectronic integrated circuit package structures include a first substrate coupled to a second substrate by a conductive interconnect structure and a dielectric material adjacent to the conductive interconnect structure. A cavity in a surface of the first substrate is adjacent to the conductive interconnect structure. A portion of the dielectric material is within the cavity.

公开(公告)号：US11908802B2

公开(公告)日：2024-02-20

申请号：US17842600

申请日：2022-06-16

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Adel A. Elsherbini ,  Kristof Darmawikarta ,  Robert A. May ,  Sri Ranga Sai Boyapati

IPC: H01L23/538 ,  H01L25/18 ,  H01L25/065 ,  H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L23/498 ,  H01L21/56

CPC classification number: H01L23/5386 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/00 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5383 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L21/561 ,  H01L21/568 ,  H01L23/5384 ,  H01L24/13 ,  H01L2224/1403 ,  H01L2224/14132 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/1517 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/381 ,  H01L2224/97 ,  H01L2224/81

Abstract: An apparatus is provided which comprises: a plurality of first conductive contacts having a first pitch spacing on a substrate surface, a plurality of second conductive contacts having a second pitch spacing on the substrate surface, and a plurality of conductive interconnects disposed within the substrate to couple a first grouping of the plurality of second conductive contacts associated with a first die site with a first grouping of the plurality of second conductive contacts associated with a second die site and to couple a second grouping of the plurality of second conductive contacts associated with the first die site with a second grouping of the plurality of second conductive contacts associated with the second die site, wherein the conductive interconnects to couple the first groupings are present in a layer of the substrate above the conductive interconnects to couple the second groupings. Other embodiments are also disclosed and claimed.

公开(公告)号：US11791528B2

公开(公告)日：2023-10-17

申请号：US17714957

申请日：2022-04-06

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew Manusharow ,  Krishna Bharath ,  Zhichao Zhang ,  Yidnekachew S. Mekonnen ,  Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Javier Soto

IPC: H01P3/08 ,  H01P3/02 ,  H05K1/02 ,  H01P3/06

CPC classification number: H01P3/082 ,  H01P3/02 ,  H01P3/026 ,  H01P3/06 ,  H01P3/08 ,  H01P3/085 ,  H01P3/088 ,  H05K1/0245

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.