Invention Grant
- Patent Title: Low loss and low cross talk transmission lines with stacked dielectric layers for forming stubs of different thickness or for forming a coaxial line
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Application No.: US17714957Application Date: 2022-04-06
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Publication No.: US11791528B2Publication Date: 2023-10-17
- Inventor: Adel A. Elsherbini , Mathew Manusharow , Krishna Bharath , Zhichao Zhang , Yidnekachew S. Mekonnen , Aleksandar Aleksov , Henning Braunisch , Feras Eid , Javier Soto
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- The original application number of the division: US16841072 2020.04.06
- Main IPC: H01P3/08
- IPC: H01P3/08 ; H01P3/02 ; H05K1/02 ; H01P3/06

Abstract:
Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.
Public/Granted literature
- US20220231394A1 LOW LOSS AND LOW CROSS TALK TRANSMISSION LINES USING SHAPED VIAS Public/Granted day:2022-07-21
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