公开(公告)号：US10381291B2

公开(公告)日：2019-08-13

申请号：US15745701

申请日：2015-09-25

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Henning Braunisch ,  Brandon M. Rawlings ,  Aleksandar Aleksov ,  Feras Eid ,  Javier Soto

IPC: H01L23/48 ,  H01L21/48 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Embodiments of the invention include conductive vias and methods for forming the conductive vias. In one embodiment, a via pad is formed over a first dielectric layer and a photoresist layer is formed over the first dielectric layer and the via pad. Embodiments may then include patterning the photoresist layer to form a via opening over the via pad and depositing a conductive material into the via opening to form a via over the via pad. Embodiments may then includeremoving the photoresist layer and forming a second dielectric layer over the first dielectric layer, the via pad, and the via. For example a top surface of the second dielectric layer is formed above a top surface of the via in some embodiments. Embodiments may then include recessing the second dielectric layer to expose a top portion of the via.

公开(公告)号：US10651525B2

公开(公告)日：2020-05-12

申请号：US15997644

申请日：2018-06-04

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew Manusharow ,  Krishna Bharath ,  Zhichao Zhang ,  Yidnekachew S. Mekonnen ,  Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Javier Soto

IPC: H01P3/06 ,  H01P3/02 ,  H05K1/02 ,  H01P3/08

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

公开(公告)号：US11791528B2

公开(公告)日：2023-10-17

申请号：US17714957

申请日：2022-04-06

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew Manusharow ,  Krishna Bharath ,  Zhichao Zhang ,  Yidnekachew S. Mekonnen ,  Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Javier Soto

IPC: H01P3/08 ,  H01P3/02 ,  H05K1/02 ,  H01P3/06

CPC classification number: H01P3/082 ,  H01P3/02 ,  H01P3/026 ,  H01P3/06 ,  H01P3/08 ,  H01P3/085 ,  H01P3/088 ,  H05K1/0245

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

公开(公告)号：US11329358B2

公开(公告)日：2022-05-10

申请号：US16841072

申请日：2020-04-06

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew Manusharow ,  Krishna Bharath ,  Zhichao Zhang ,  Yidnekachew S. Mekonnen ,  Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Javier Soto

IPC: H01P3/08 ,  H01P3/02 ,  H05K1/02 ,  H01P3/06

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

公开(公告)号：US09992859B2

公开(公告)日：2018-06-05

申请号：US14866693

申请日：2015-09-25

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew Manusharow ,  Krishna Bharath ,  Zhichao Zhang ,  Yidnekachew S. Mekonnen ,  Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Javier Soto

IPC: H05K1/02 ,  H01P3/02 ,  H01P3/08

CPC classification number: H05K1/0245 ,  H01P3/02 ,  H01P3/026 ,  H01P3/08 ,  H01P3/085 ,  H01P3/088

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.