公开(公告)号：US11990509B2

公开(公告)日：2024-05-21

申请号：US17866986

申请日：2022-07-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shu-Han Chen ,  Tsung-Ju Chen ,  Chun-Heng Chen ,  Chi On Chui

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3115 ,  H01L29/66 ,  H01L29/78 ,  H01L21/265 ,  H01L29/10

CPC分类号： H01L29/0673 ,  H01L21/0262 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/31155 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/26513 ,  H01L29/1083

摘要： In an embodiment, a structure includes: a nano-structure; an epitaxial source/drain region adjacent the nano-structure; a gate dielectric wrapped around the nano-structure; a gate electrode over the gate dielectric, the gate electrode having an upper portion and a lower portion, a first width of the upper portion increasing continually in a first direction extending away from a top surface of the nano-structure, a second width of the lower portion being constant along the first direction; and a gate spacer between the gate dielectric and the epitaxial source/drain region.

公开(公告)号：US11990505B2

公开(公告)日：2024-05-21

申请号：US17424003

申请日：2020-04-29

申请人： WILL SEMICONDUCTOR CO., LTD.SHANGHAI

发明人： Fusheng Zhang ,  Chengzong Xu

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/0615 ,  H01L29/0646 ,  H01L29/1058 ,  H01L29/66833

摘要： A transient-voltage-suppression protection device and a manufacturing process therefor, and an electronic product. The transient-voltage-suppression protection device includes a substrate, a first trap, a second trap, a first injection region, and a second injection region, where the first trap and the second trap are sequentially arranged on the substrate from left to right at an interval, have a same doping type that is opposite to a doping type of the substrate, and are respectively provided with the first injection region and the second injection region with opposite doping types. The electronic product includes the transient-voltage-suppression protection device. In the solutions described, protection can be triggered and started at a lower voltage; the capacitance is small, and the manufacturing process is simple.

公开(公告)号：US20240162343A1

公开(公告)日：2024-05-16

申请号：US18452805

申请日：2023-08-21

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Yuji ENARI ,  Takashi TONEGAWA

IPC分类号： H01L29/78 ,  H01L23/00 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7802 ,  H01L24/05 ,  H01L24/06 ,  H01L29/1095 ,  H01L29/66712 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05082 ,  H01L2224/05557 ,  H01L2224/05561 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2924/13091

摘要： An interlayer insulating film is formed on an upper surface of a semiconductor substrate. A source pad and a kelvin pad, a gate pad, and a drain pad each having a smaller plane area than a plane area of the source pad are formed on the interlayer insulating film. A first plating layer is formed on the source pad. A second plating layer is formed on each of the kelvin pad, the gate pad, and the drain pad. A material of an uppermost surface of the first plating layer is a metal other than a noble metal, and a material of an uppermost surface of the second plating layer is a noble metal.

公开(公告)号：US20240162296A1

公开(公告)日：2024-05-16

申请号：US18497409

申请日：2023-10-30

申请人： Infineon Technologies Austria AG

发明人： Daniel Maurer ,  Sabine Konrad ,  Steffen Sack ,  Thomas Ostermann

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/1033 ,  H01L29/0607 ,  H01L29/66681 ,  H01L29/7823

摘要： The disclosure relates to a semiconductor die and a method for manufacturing the semiconductor die. The semiconductor includes: a semiconductor body having an active region with a p-channel device formed in the active region; an insulation layer formed on the semiconductor body; and a sodium stopper formed in the insulation layer and arranged laterally between the active region and a lateral edge of the semiconductor die. The sodium stopper has an insulation layer groove which intersects the insulation layer vertically and extends around the active region. The insulation layer groove is filled with a diffusion barrier material.

公开(公告)号：US20240162256A1

公开(公告)日：2024-05-16

申请号：US18344398

申请日：2023-06-29

申请人： Samsung Electronics Co., Ltd.

发明人： Kyoungeun Chang ,  Sungin Kim ,  Jameyung Kim ,  Incheol Cho

IPC分类号： H01L27/146 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L27/14614 ,  H01L29/1033 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238

摘要： Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, and a gate electrode on the active region, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, wherein the gate electrode includes a lateral gate portion on a portion of the top surface of the active region, a vertical gate portion on a sidewall of the active region, and a round inner corner portion integrally connected to the lateral gate portion and the vertical gate portion, the round inner corner portion facing the local round edge portion.

公开(公告)号：US20240162078A1

公开(公告)日：2024-05-16

申请号：US18539304

申请日：2023-12-14

申请人： FUJI ELECTRIC CO., LTD.

发明人： Takahiro TAMURA ,  Michio NEMOTO

IPC分类号： H01L21/761 ,  H01L21/02 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/266 ,  H01L21/285 ,  H01L21/77 ,  H01L27/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/36 ,  H01L29/423 ,  H01L29/47 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC分类号： H01L21/761 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/221 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/28537 ,  H01L21/77 ,  H01L27/0664 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/47 ,  H01L29/66356 ,  H01L29/7391 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/872 ,  H01L29/8725

摘要： There is provided a diode including an anode electrode provided on a side of a front surface of a semiconductor substrate, an interlayer dielectric film disposed between the semiconductor substrate and the anode electrode, a first anode region of a first conductivity type provided on the front surface of the semiconductor substrate, a second anode region of a second conductivity type, which is different from the first conductivity type, provided on the front surface of the semiconductor substrate, a first contact hole provided in the interlayer dielectric film, causing the anode electrode to be in Schottky contact with the first anode region, and a second contact hole provided in the interlayer dielectric film and different from the first contact hole, causing the anode electrode to be in ohmic contact with the second anode region.

公开(公告)号：US11978786B2

公开(公告)日：2024-05-07

申请号：US17495588

申请日：2021-10-06

申请人： Murata Manufacturing Co., Ltd.

发明人： Isao Obu ,  Yasunari Umemoto ,  Masahiro Shibata ,  Shigeki Koya ,  Masao Kondo ,  Takayuki Tsutsui

IPC分类号： H01L29/737 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L23/00 ,  H01L27/102 ,  H01L29/08 ,  H01L29/10 ,  H01L29/205 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/735 ,  H03F1/30 ,  H03F1/56 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/24

CPC分类号： H01L29/7371 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/28575 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/31111 ,  H01L24/00 ,  H01L29/0813 ,  H01L29/0817 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/205 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66318 ,  H03F1/56 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F3/245 ,  H01L29/452 ,  H03F1/302 ,  H03F2200/222 ,  H03F2200/267 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/451

摘要： A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20240145590A1

公开(公告)日：2024-05-02

申请号：US18219227

申请日：2023-07-07

申请人： Semiconductor Manufacturing International (Beijing) Corporation ,  Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Ye WANG

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L29/7816 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/66681

摘要： A semiconductor structure and a method for forming same. The structure includes: a base substrate; a gate structure, located on the base substrate; a drift region, located in the base substrate on one side of the gate structure; a body region, located in the base substrate on the other side of the gate structure; a drain region, located in the drift region on one side of the gate structure; a source region, located in the body region on the other side of the gate structure; and a floating field plate, located on the drift region between the gate structure and the drain region, where the floating field plate has notches arranged at intervals along a width direction of the gate structure, and the floating field plate also has notches arranged at intervals along a length direction of the gate structure.

公开(公告)号：US20240145580A1

公开(公告)日：2024-05-02

申请号：US18487170

申请日：2023-10-16

申请人： Infineon Technologies AG

发明人： Andreas Hoffmann

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/66681 ,  H01L29/105 ,  H01L29/7833

摘要： A field-effect transistor (FET) is described. The FET has a dielectric structure which includes a gate dielectric and a shielding dielectric. The shielding dielectric is thicker than the gate dielectric and adjoins or is spaced apart from the gate dielectric along a first lateral direction. A channel region of a first conductivity type adjoins a lower side of the gate dielectric. An auxiliary region of a second conductivity type adjoins the lower side of the gate dielectric and adjoins the channel region along a second lateral direction.

公开(公告)号：US20240145547A1

公开(公告)日：2024-05-02

申请号：US18409045

申请日：2024-01-10

申请人： Zeno Semiconductor, Inc.

发明人： Jin-Woo Han ,  Yuniarto Widjaja ,  Zvi Or-Bach ,  Dinesh Maheshwari

IPC分类号： H01L29/10 ,  G11C11/404 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L21/761 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H01L27/12 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H10B63/00

CPC分类号： H01L29/1087 ,  G11C11/404 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L21/761 ,  H01L21/823892 ,  H01L27/0218 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42356 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H10B63/30 ,  G11C13/004

摘要： A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.